1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCS154DMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead SBDIP
HCS154KMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead Ceramic Flatpack
HCS154D/Sample +25oC Sample 24 Lead SBDIP
HCS154K/Sample +25oC Sample 24 Lead Ceramic Flatpack
HCS154HMSR +25oC Die Die
HCS154MS
Radiation Hardened
4-to-16 Line Decoder/Demultiplexer
Pinouts 24 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T24
TOP VIEW
24 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F24
TOP VIEW
GND
VCC
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
1
2
3
4
5
6
7
8
9
10
11
12
16
17
18
19
20
21
22
23
24
15
14
13
A0
A1
A2
A3
E1
E2
24
23
22
21
20
19
18
17
16
15
14
13
2
3
4
5
6
7
8
9
10
11
12
1
ND
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
VCC
Y11
Y12
Y13
Y14
Y15
A0
A1
A2
A3
E1
E2
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm2/mg
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 1012 Rads (Si)/s
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse
• Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day
(Typ)
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55oC to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCS154MS is a Radiation Hardened 4 to 16 line
Decoder/Demultiplexer with two enable inputs. A high on
either enable input forces the output to a high state. The
Demultiplexing function is performed by using the four input
lines A0 to A3 to select the desired output states.
The HCS154MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS154MS is supplied in a 24 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
September1995
Spec Number 518754
File Number 2479.2
DB NA
2
HCS154MS
Functional Diagram
TRUTH TABLE
INPUTS OUTPUTS
E1 E2 A0 A1 A2 A3 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15
LLLLLLLHHHHHHHHHHHHHHH
LLLLLHHLHHHHHHHHHHHHHH
LLLLHLHHLHHHHHHHHHHHHH
LLLLHHHHHLHHHHHHHHHHHH
LLLHLLHHHHLHHHHHHHHHHH
LLLHLHHHHHHLHHHHHHHHHH
LLLHHLHHHHHHLHHHHHHHHH
LLLHHHHHHHHHHLHHHHHHHH
LLHLLLHHHHHHHHLHHHHHHH
LLHLLHHHHHHHHHHLHHHHHH
LLHLHLHHHHHHHHHHLHHHHH
LLHLHHHHHHHHHHHHHLHHHH
LLHHLLHHHHHHHHHHHHLHHH
LLHHLHHHHHHHHHHHHHHLHH
LLHHHLHHHHHHHHHHHHHHLH
LLHHHHHHHHHHHHHHHHHHHL
LHXXXXHHHHHHHHHHHHHHHH
HLXXXXHHHHHHHHHHHHHHHH
HHXXXXHHHHHHHHHHHHHHHH
H = High Level, L = Low Level, X = Immaterial
Spec Number 518754
3
Specifications HCS154MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance θJA θJC
SBDIP Package. . . . . . . . . . . . . . . . . . . . 63oC/W 23oC/W
Ceramic Flatpack Package . . . . . . . . . . . 87oC/W 23oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.79W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.57W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . 11.5mW/oC
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS SYMBOL (NOTE 1)
CONDITIONS
GROUP
A SUB-
GROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Quiescent Current ICC VCC = 5.5V,
VIN = VCC or GND 1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
Output Current
(Sink) IOL VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V 1 +25oC 4.8 - mA
2, 3 +125oC, -55oC 4.0 - mA
Output Current
(Source) IOH VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V
1 +25oC -4.8 - mA
2, 3 +125oC, -55oC -4.0 - mA
Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,
IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,
IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC
-0.1 -V
VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC VCC
-0.1 -V
Input Leakage
Current IIN VCC = 5.5V, VIN = VCC or
GND 1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
Noise Immunity
Functional Test FN VCC = 4.5V,
VIH = 0.70(VCC), (Note 2)
VIL = 0.30(VCC)
7, 8A, 8B +25oC, +125oC, -55oC---
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
Spec Number 518754
4
Specifications HCS154MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL (NOTES 1, 2)
CONDITIONS GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Address to Output TPLH VCC = 4.5V 9 +25oC 2 29 ns
10, 11 +125oC, -55oC 2 34 ns
TPHL VCC = 4.5V 9 +25oC 2 27 ns
10, 11 +125oC, -55oC 2 31 ns
Enable to Output TPLH
TPHL VCC = 4.5V 9 +25oC 2 27 ns
10, 11 +125oC, -55oC 2 27 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Capacitance Power
Dissipation CPD VCC = 5.0V, f = 1MHz 1 +25oC - 66 pF
1 +125oC, -55oC - 74 pF
Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF
1 +125oC - 10 pF
Output Transition
Time TTHL
TTLH VCC = 4.5V 1 +25oC - 15 ns
1 +125oC - 22 ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS SYMBOL (NOTES 1, 2)
CONDITIONS TEMPERATURE
200K RAD
LIMITS
UNITSMIN MAX
Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V +25oC 4.0 - mA
Output Current
(Source) IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V +25oC -4.0 - mA
Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOL = 50µA+25oC - 0.1 V
Spec Number 518754
5
Specifications HCS154MS
Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), IOH = -50µA+25oC VCC
-0.1 -V
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5µA
Noise Immunity
Functional Test FN VCC = 4.5V, VIH = 0.70(VCC),
VIL = 0.30(VCC), (Note 3) +25oC ---
Address to Output TPLH VCC = 4.5V +25oC 2 34 ns
TPHL VCC = 4.5V +25oC 2 31 ns
Enable to Output TPLH
TPHL VCC = 4.5V +25oC 2 27 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)
PARAMETER GROUP B
SUBGROUP DELTA LIMIT
ICC 5 12µA
IOL/IOH 5 -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
PDA 100%/5004 1, 7, 9, Deltas
Interim Test III (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H
PDA 100%/5004 1, 7, 9, Deltas
Final Test 100%/5004 2, 3, 8A, 8B, 10, 11
Group A (Note 1) Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample/5005 1, 7, 9
Group D Sample/5005 1, 7, 9
NOTE:
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETERS SYMBOL (NOTES 1, 2)
CONDITIONS TEMPERATURE
200K RAD
LIMITS
UNITSMIN MAX
Spec Number 518754
6
Specifications HCS154MS
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS METHOD
TEST READ AND RECORD
PRE RAD POST RAD PRE RAD POST RAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1)
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V
OSCILLATOR
50kHz 25kHz
STATIC BURN-IN I TEST CONDITIONS (Note 1)
1 - 11, 13 - 17 12, 18 - 23 - 24 - -
STATIC BURN-IN II TEST CONNECTIONS (Note 1)
1 - 11, 13 - 17 12 - 18 - 24 - -
DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2)
- 12, 18 - 21 1 - 11, 13 - 17 24 23 22
NOTES:
1. Each pin except VCC and GND will have a resistor of 10KΩ± 5% for static burn-in.
2. Each pin except VCC and GND will have a resistor of 1KΩ± 5% for dynamic burn-in.
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN GROUND VCC = 5V ± 0.5V
1 - 11, 13 - 17 12 18 - 24
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ± 5% for irradiation testing.
Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 518754
7
HCS154MS
Intersil Space Level Product Flow - ‘MS’
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 1 (T1)
100% Delta Calculation (T0-T1)
100% Static Burn-In 2, Condition A or B, 24 hrs. min.,
+125oC min., Method 1015
100% Interim Electrical Test 2 (T2)
100% Delta Calculation (T0-T2)
100% PDA 1, Method 5004 (Notes 1and 2)
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
Equivalent, Method 1015
100% Interim Electrical Test 3 (T3)
100% Delta Calculation (T0-T3)
100% PDA 2, Method 5004 (Note 2)
100% Final Electrical Test
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 3)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 4)
100% Data Package Generation (Note 5)
NOTES:
1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1.
2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
5. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number,
Quantity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number . Data header includes lot number and date of test.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518754
8
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
HCS154MS
AC Timing Diagrams
AC VOLTAGE LEVELS
PARAMETER HCS UNITS
VCC 4.50 V
VIH 4.50 V
VS 2.25 V
VIL 0 V
GND 0 V
VS INPUT
OUTPUT
OUTPUT
TTHL
80%
20%
80%
20%
VIH
VIL
VOH
VOL
VOH
VOL
TPLH TPHL
VS
TTLH
AC Load Circuit
DUT TEST
CL RL
POINT
CL = 50pF
RL = 500Ω
Spec Number 518754
9
HCS154MS
Spec Number 518754
Die Characteristics
DIE DIMENSIONS:
85 x 101 mils
2.16 x 2.57mm
METALLIZATION:
Type: AlSi
Metal Thickness: 11kű1kÅ
GLASSIVATION:
Type: SiO2
Thickness: 13kű 2.6kÅ
WORST CASE CURRENT DENSITY:
2.0 x 105A/cm2
BOND PAD SIZE:
100µm x 100µm
4 x 4 mils
Metallization Mask Layout HCS154MS
Y0
(1)
Y1
(2)
Y2 (3)
Y3 (4)
Y4 (5)
Y5 (6)
Y6 (7)
Y7 (8)
Y8 (9)
Y9 (10)
(11)
Y10 (12)
GND (13)
Y11 (14)
Y12 (15)
Y13
(21) A2
(20) A3
(19) E2
(18) E1
(17) Y15
(16) Y14
VCC
(24) A0
(23) A1
(22)
