KSR-4007-001 1
SRC1211EF
NPN Silicon Transistor
Descriptions
• Switching application
• Interface circuit and driver circuit application
Features
• With built-in bias resistors
• Simplify circuit design
• R educe a quanti ty of parts and manufacturing process
• High packing density
Ordering Information
Type NO. Marking Package Code
SRC1211EF RD SOT-523F
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
•
••
• Equivalent Circuit
R1
B(IN)
E(COMMON)
C(OUT)
R1 = 10KΩ
ΩΩ
Ω
PIN Conne cti ons
1. Base
2. Emitter
3. Collector
0.68
1
2
3
0~0.1
1.11±0.05
1.60±0.1.
0.88±0.1.
1.60±0.1
1.00±0.1
0.25~0.30
+0.1
-0.05
KSR-4007-001 2
SRC1211EF
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base Voltage VCBO 50 V
Collector-E mitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5V
Collector Current IC100 mA
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature TSTG -55 ~ 150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 500 nA
Emitter Cut-off Current I EBO VEB=5V, IC=0 - - 500 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - - -
Collec tor -Emitter Satur a tion Voltage VCE(SAT) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT*VCE=10V, IC=5mA - 250 - MHz
Input Resistance R1--10-
KΩ
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 2 VCE(SAT) - IC
Fig. 1 hFE - IC
