NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com * Voltage and Current are Negative for PNP Transistors * These are Pb-Free Devices* COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Vdc 250 350 VCBO 2N6515 2N6517, 2N6520 Emitter - Base Voltage 1 EMITTER 2 BASE Vdc PNP 250 350 VEBO 2N6515, 2N6517 2N6520 1 EMITTER Vdc 6.0 5.0 Base Current IB 250 mAdc Collector Current - Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range COLLECTOR 3 NPN Unit VCEO 2N6515 2N6517, 2N6520 Collector - Base Voltage Value TO-92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2N 65xx AYWW G G xx = 15, 17, or 20 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 March, 2007 - Rev. 5 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: 2N6515/D NPN - 2N6515, 2N6517; PNP - 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 250 350 - - 250 350 - - 6.0 5.0 - - - - 50 50 - - 50 50 2N6515 2N6517, 2N6520 35 20 - - (IC = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 - - (IC = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 50 30 300 200 (IC = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 45 20 220 200 (IC = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6517, 2N6520 25 15 - - - - - - 0.30 0.35 0.50 1.0 - - - 0.75 0.85 0.90 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6517, 2N6520 Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Vdc V(BR)CBO 2N6515 2N6517, 2N6520 Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Vdc V(BR)EBO 2N6515, 2N6517 2N6520 Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) 2N6515 2N6517, 2N6520 Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 2N6515, 2N6517 2N6520 Vdc ICBO nAdc IEBO nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) - 2.0 Vdc fT 40 200 MHz Ccb - 6.0 pF - - 80 100 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb 2N6515, 2N6517 2N6520 pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton - 200 ms Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff - 3.5 ms 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 NPN - 2N6515, 2N6517; PNP - 2N6520 hFE , DC CURRENT GAIN 200 VCE = 10 V TJ = 125C 100 25C 70 -55C 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain NPN 2N6515 200 200 TJ = 125C VCE = -10 V 100 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 10 V 25C 70 50 -55C 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 100 25C 70 -55C 50 30 20 10 -1.0 50 70 100 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 3. DC Current Gain PNP 2N6520 f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain NPN 2N6517 30 TJ = 125C 50 70 100 Figure 4. Current-Gain - Bandwidth Product NPN 2N6515, 2N6517 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 5. Current-Gain - Bandwidth Product PNP 2N6520 http://onsemi.com 3 NPN - 2N6515, 2N6517; PNP - 2N6520 -1.4 1.4 TJ = 25C 1.2 -1.2 0.8 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 5.0 2.0 3.0 -1.0 -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -10 V -0.4 -0.2 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 0 -1.0 70 100 1.5 1.0 0.5 0 RV, TEMPERATURE COEFFICIENTS (mV/C) RV, TEMPERATURE COEFFICIENTS (mV/C) IC + 10 IB 2.0 25C to 125C RqVC for VCE(sat) -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 -55C to 125C RqVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 2.0 1.5 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 20 0.5 Ccb -55C to 25C -1.0 -1.5 RqVC for VCE(sat) -55C to 125C -2.0 -2.5 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 TJ = 25C 20 10 7.0 5.0 2.0 1.0 -0.2 50 100 200 Ceb 30 3.0 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) RqVB for VBE -0.5 2.0 0.5 25C to 125C 0 3.0 1.0 0.2 IC + 10 IB 1.0 100 70 50 Ceb 10 7.0 5.0 -50 -70 -100 Figure 9. Temperature Coefficients PNP 2N6520 TJ = 25C 30 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) 2.5 Figure 8. Temperature Coefficients NPN 2N6515, 2N6517 100 70 50 VCE(sat) @ IC/IB = 10 Figure 7. "On" Voltages PNP 2N6520 Figure 6. "On" Voltages NPN 2N6515, 2N6517 2.5 TJ = 25C Figure 10. Capacitance NPN 2N6515, 2N6517 Ccb -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance PNP 2N6520 http://onsemi.com 4 -10 0 -20 0 NPN - 2N6515, 2N6517; PNP - 2N6520 1.0k 700 500 td @ VBE(off) = 2.0 V VCE(off) = 100 V IC/IB = 5.0 TJ = 25C tr 100 70 50 100 70 50 30 30 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 tr 200 20 10 1.0 10 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 12. Turn-On Time NPN 2N6515, 2N6517 10k 7.0k 5.0k t, TIME (ns) -50 -70 -100 Figure 13. Turn-On Time PNP 2N6520 2.0k ts ts 1.0k 700 3.0k 500 2.0k 1.0k 700 500 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 300 200 t, TIME (ns) t, TIME (ns) 300 1.0k 700 500 tf tf 300 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 100 70 50 300 200 30 100 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 20 -1.0 70 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 14. Turn-Off Time NPN 2N6515, 2N6517 -50 -70 -100 Figure 15. Turn-Off Time PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V +10.8 V 2.2 k 20 k 50 W SAMPLING SCOPE 1.0 k 50 1/2MSD7000 -9.2 V PULSE WIDTH 100 ms tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 16. Switching Time Test Circuit http://onsemi.com 5 RESISTANCE (NORMALIZED) NPN - 2N6515, 2N6517; PNP - 2N6520 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE ZqJC(t) = r(t) * RqJC TJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) * RqJA TJ(pk) - TA = P(pk) ZqJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 500 TA = 25C 200 100 tP 1.0 ms TC = 25C 50 FIGURE A 10 ms 100 ms PP 100 ms PP 20 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT 10 5.0 2.0 CURVES APPLY BELOW RATED VCEO 1.0 0.5 0.5 1.0 t1 2N6515 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP 2N6517, 2N6520 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data ORDERING INFORMATION Package Shipping 2N6515RLRMG TO-92 (Pb-Free) 2000 Ammo Pack 2N6517G TO-92 (Pb-Free) 5000 Unit / Bulk 2N6517RLRPG TO-92 (Pb-Free) 2000 Ammo Pack 2N6520RLRAG TO-92 (Pb-Free) 2000 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NPN - 2N6515, 2N6517; PNP - 2N6520 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X-X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE K D X X G J V 1 C SECTION X-X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6515/D