2N6520RLRAG - ON SEMICONDUCTOR

March, 2007 − Rev. 5 1Publication Order Number:

2N6515/D

NPN − 2N6515, 2N6517;

PNP − 2N6520

High Voltage Transistors

NPN and PNP

Features

•Voltage and Current are Negative for PNP Transistors

•These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter V oltage 2N6515

2N6517, 2N6520

VCEO 250

350

Vdc

Collector − Base Voltage 2N6515

2N6517, 2N6520

VCBO 250

350

Vdc

Emitter − Base Voltage 2N6515, 2N6517

2N6520

VEBO 6.0

5.0

Vdc

Base Current IB250 mAdc

Collector Current − Continuous IC500 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°CPD625

5.0 mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD1.5

12 W

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may af fect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D. See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

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COLLECTOR

BASE

EMITTER

COLLECTOR

BASE

EMITTER

NPN

PNP

12312

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

65xx

AYWW G

xx = 15, 17, or 20

A = Assembly Location

Y = Year

WW = W ork Week

G= Pb−Free Package

(Note: Microdot may be in either location)

NPN − 2N6515, 2N6517; PNP − 2N6520

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0 ) 2N6515

2N6517, 2N6520

V(BR)CEO 250

350 −

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0 ) 2N6515

2N6517, 2N6520

V(BR)CBO 250

350 −

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) 2N6515, 2N6517

2N6520

V(BR)EBO 6.0

5.0 −

−

Vdc

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0) 2N6515

(VCB = 250 Vdc, IE = 0) 2N6517, 2N6520

ICBO −

−50

nAdc

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517

(VEB = 4.0 Vdc, IC = 0 ) 2N6520

IEBO −

−50

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 10 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 30 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 50 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

(IC = 100 mAdc, VCE = 10 Vdc) 2N6515

2N6517, 2N6520

hFE 35

−

300

200

220

200

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) −

−

0.30

0.35

0.50

1.0

Vdc

Base−Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 20 mAdc, IB = 2.0 mAdc)

(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat) −

−

0.75

0.85

0.90

Vdc

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 10 Vdc) VBE(on) − 2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 1)

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT40 200 MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517

2N6520

Ceb −

−80

100

SWITCHING CHARACTERISTICS

Turn−On Time

(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton − 200 ms

Turn−Off Time

(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff − 3.5 ms

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

NPN − 2N6515, 2N6517; PNP − 2N6520

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Figure 1. DC Current Gain

NPN 2N6515

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

hFE, DC CURRENT GAIN

200

100

VCE = 10 V TJ = 125°C

25°C

−55°C

Figure 2. DC Current Gain

NPN 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

VCE = 10 V TJ = 125°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

VCE = −10 V

TJ = 125°C

25°C

−55°C

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

f, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

hFE, DC CURRENT GAIN

100

TJ = 25°C

VCE = 20 V

f = 20 MHz

TJ = 25°C

VCE = −20 V

f = 20 MHz

200

100

Figure 3. DC Current Gain

PNP 2N6520

Figure 4. Current−Gain − Bandwidth Product

NPN 2N6515, 2N6517 Figure 5. Current−Gain − Bandwidth Product

PNP 2N6520

NPN − 2N6515, 2N6517; PNP − 2N6520

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Figure 6. “On” Voltages

NPN 2N6515, 2N6517 Figure 7. “On” Voltages

PNP 2N6520

Figure 8. Temperature Coefficients

NPN 2N6515, 2N6517 Figure 9. Temperature Coefficients

PNP 2N6520

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

V, VOLTAGE (VOLTS)

1.4

1.2

0.6

0.8

1.0

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2.5

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

Figure 10. Capacitance

NPN 2N6515, 2N6517

VR, REVERSE VOLTAGE (VOLTS)

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

100

2.0

3.0

5.0

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

1.0

V, VOLTAGE (VOLTS)

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

−1.4

−1.2

−0.6

−0.8

−1.0

−0.4

−0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = −10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

2.0

1.5

1.0

0.5

−0.5

−1.0

−1.5

−2.0

−2.5

RqVC for VCE(sat)

RqVB for VBE

25°C to 125°C

−55°C to

25°C

−55°C to 125°C

IB +10

RqVC for VCE(sat)

RqVB for VBE

25°C to 125°C

−55°C to

25°C

−55°C to 125°C

IB +10

C, CAPACITANCE (pF)

7.0

−20

−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −10

TJ = 25°CTJ = 25°C

Ccb

Ceb

Ccb

Ceb

2.5

2.0

1.5

1.0

0.5

−0.5

−1.0

−1.5

−2.0

−2.5

100

2.0

3.0

5.0

1.0

7.0

Figure 11. Capacitance

PNP 2N6520

NPN − 2N6515, 2N6517; PNP − 2N6520

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Figure 12. Turn−On Time

NPN 2N6515, 2N6517

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

t, TIME (ns)

1.0k

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

IC, COLLECTOR CURRENT (mA)

−100−1.0 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70

100

200

300

500

700

t, TIME (ns)

td @ VBE(off) = 2.0 V

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

td @ VBE(off) = 2.0 V

VCE(off) = −100 V

IC/IB = 5.0

TJ = 25°C

t, TIME (ns)

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

100

200

300

500

700

1.0k

2.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

VCE(off) = −100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

1.0k

100

200

300

500

700

Figure 13. Turn−On Time

PNP 2N6520

Figure 14. Turn−Off Time

NPN 2N6515, 2N6517 Figure 15. Turn−Off Time

PNP 2N6520

Figure 16. Switching Time Test Circuit

+10.8 V

−9.2 V

+VCC

2.2 k 20 k

50 W SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

−1.35 V (ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH ≈ 100 ms

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

NPN − 2N6515, 2N6517; PNP − 2N6520

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0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

RESISTANCE (NORMALIZED)

10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k

t, TIME (ms)

Figure 17. Thermal Response

500

200

100

5.0

2.0

1.0

0.5

IC, COLLECTOR CURRENT (mA)

0.5 1.0 2.0 5.0 10 20 50 100 200 500

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal

Resistance Data

FIGURE A

PPPP

1/f

DUTYCYCLE +t1f +

PEAK PULSE POWER = PP

TA = 25°C

1.0 ms

10 ms

TC = 25°C

100 ms

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t)

ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t)

CURRENT LIMIT

THERMAL LIMIT

(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

CURVES APPLY

BELOW RATED VCEO

2N6515

2N6517, 2N6520

ORDERING INFORMATION

Device Package Shipping†

2N6515RLRMG TO−92

(Pb−Free) 2000 Ammo Pack

2N6517G TO−92

(Pb−Free) 5000 Unit / Bulk

2N6517RLRPG TO−92

(Pb−Free) 2000 Ammo Pack

2N6520RLRAG TO−92

(Pb−Free) 2000 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NPN − 2N6515, 2N6517; PNP − 2N6520

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PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION:

MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN

P AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 −−−

N2.04 2.66

P1.50 4.00

R2.93 −−−

V3.43 −−−

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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2N6515/D

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