= u B PNEW ENGLAND SEMICONDUCTOR NSE8738 NPN DUAL TRANSISTOR MAXIMUM RATINGS RATINGS SYMBOL NSE8738 UNITS TO-99 Collector-Emitter Voltage Vcror 50 Vde Collector-Base Voltage Veo 75 Vde Emitter-Base Voltage VERO 7.0 Vdc Collector Current Continuous Ic 600 mAdc One Die | Both Die Equal Collector 1 7 Collector Power Total Device Dissipation @Ta = 25C Pp 500 600 WwW z (i \ 6 Derate Above 25C 2.9 34 | mw/c wy Total Device Dissipation @Tc= 25C Pp 1.2 2.0 WwW Eminer 3 6 Emitter Derate Above 25C 6.9 11.43 mW/c Operating & Storage Junction Ty, Tstg OO NPN auc, ON ORS Temperature Range -65 to +200 *C ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Characteristics | SYMBOL Min | Max | UNITS | OFF CHARACTERISTICS Collector-Base Breakdown Voltage Ig = 100 Adc, Tg =0 VeerycBo 75 Vdc Emitter-Base Breakdown Voltage Ig = 0.1 mAdc, Ic =0 V(BR)EBO 7.0 Vde Collector Cutoff Current Vcr = 60 Vdc, Ip = 0 TcBo 10 nAdc Emitter Cutoff Current Vep= 5.0 Vdc, Io = 0 Tego 5.0 nAdc ON CHARACTERISTICS DC Current Gain Ic = 100 pAdc, Vog= 10 Vde hrg 35 - I; = 10 mAdc, Vog= 10 Vde (1) 75 - Collector-Emitter Saturation Voltage (1) Ip = 150 mAdc, Ip= 15 mAdc Vce(eat 0.5 Vde SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product (2) I; = 50 mAdc, Veg = 10 Vde, f= 20 MHz T 3.5 Collector-Base Capacitance Veg =10 Vde,Ip = 0, f= 100 kHz Cobo 18 Pp (1 )Pulse Test: Pulse Width < 300pus, Duty Cycle < 2.0%. (2)'T is defined as the frequency at which [hg extrapolates to unity. NEW ENGLAND SEMICONDUCTOR * Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-031 REV:--