1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO –12 Vdc
Collector–Base Voltage VCBO –12 Vdc
Emitter–Base Voltage VEBO –4.0 Vdc
Collector Current — Continuous IC–80 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –100 µAdc, VBE = 0) V(BR)CES –12 — Vdc
Collector–Emitter Sustaining Voltage(1)
(IC = –10 mAdc, IB = 0) VCEO(sus) –12 — Vdc
Collector–Base Breakdown Voltage
(IC = –100
m
Adc, IE = 0) V(BR)CBO –12 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0) V(BR)EBO –4.0 — Vdc
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
ICES —
—–0.01
–1.0
µAdc
Base Current
(VCE = –6.0 Vdc, VEB = 0) IB— –10 nAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
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by MPS3640/D
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SEMICONDUCTOR TECHNICAL DATA
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CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS3640
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –10 mAdc, VCE = –0.3 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
hFE 30
20 120
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C)
VCE(sat) —
—
—
–0.2
–0.6
–0.25
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat) –0.75
–0.75
—
–0.95
–1.0
–1.5
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT500 — MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 3.5 pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 3.5 pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = –6.0 Vdc, IC = –50 mAdc, VBE(off) = –1.9 Vdc,
IB1 = –5.0 mAdc)
td— 10 ns
Rise Time
IB1 = –5.0 mAdc)
tr— 30 ns
Storage Time
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc)
ts— 20 ns
Fall Time tf— 12 ns
Turn–On Time
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc)
ton —
—25
60
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –50 mAdc, IB1 = IB2 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc)
toff —
—35
75
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
VBB = +1.9 V VCC = –6.0 V
0
–6.8 V Vin
51
0.1
µ
F
1.0 k 110
Vout
680
PULSE SOURCE
RISE TIME
≤
1.0 ns
PULSE WIDTH
≥
100 ns
Zin = 50 OHMS
FALL TIME
≤
1.0 ns
TO SAMPLING SCOPE
INPUT Z
≥
100 k
RISE TIME
≤
1.0 ns
NOTES: Collector Current = 50 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.
VBB = –6.0 V VCC = 1.5 V
0
5.0 V
Vin
51
0.1
µ
F
5.0 k 130
Vout
5.0 k
PULSE SOURCE
RISE TIME
≤
1.0 ns
PULSE WIDTH
≥
200 ns
Zin = 50 OHMS
FALL TIME
≤
1.0 ns
TO SAMPLING SCOPE
INPUT Z
≥
100 k
RISE TIME
≤
1.0 ns
Figure 1. Figure 2.
NOTES: Collector Current = 10 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.
MPS3640
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
200
10 –1.0
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V, VOLTAGE (VOLTS)
–1.4
0
TJ = 25
°
C
VBE(on) @ VCE = –1.0 V
VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10
–2.0 –5.0 –10 –20 –50
100
20
50
70
TJ = 125
°
C
25
°
C
–55
°
C
VCE = –1.0 V
30
–100–0.1 –0.2 –0.5
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–0.1 –0.2 –0.5
IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
–1.0
–0.6
0
IC = –1.0 mA
–0.8
–0.4
–0.2
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10
–5.0 mA –20 mA –80 mA
TJ = 25
°
C
V, TEMPERATURE COEFFICIENT (mV/ C)
°θ
+0.5
0
–0.5
–1.0
–1.5
–2.0 –1.0 –2.0 –5.0 –10 –20 –50 –100–0.1 –0.2 –0.5IC, COLLECTOR CURRENT (mA)
Figure 6. Temperature Coefficients
*APPLIES FOR IC/IB
≤
hFE/4
R
θ
VC for VCE(sat)
R
θ
VB for VBE
25
°
C to 125
°
C
–55
°
C to 25
°
C
25
°
C to 125
°
C
–55
°
C to 25
°
C
Figure 7. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
2000
200
400
600
800
1000
Figure 8. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
Cobo
–1.0 –2.0 –5.0 –10 –20 –50 –100–3.0 –7.0 –30 –70
TJ = 25
°
C
f = 100 MHz VCE = –10 V
–1.0 V
5.0
3.0
2.0
1.0
0.7
0.5 –2.0 –5.0–3.0 –7.0 –10 –20–0.2 –0.5–0.3 –0.7 –1.0
TJ = 25
°
C
Cibo
MPS3640
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
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MPS3640/D
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