DM2G50SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 4 High Speed Switching BVCES = 600V Low Conduction Loss : VCE(sat) = 2.1 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min.10uS at TC=100 Reduced EMI and RFI Isolation Type Package Package : 7DM-1 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls, High Speed SMPS Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 600 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 75 A TC = 80 50 A - 100 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 80 50 A IFM Diode Maximum Forward Current - 100 A TSC Short Circuit Withstand Time TC = 100 10 uS PD Maximum Power Dissipation TC = 25 275 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M5 - 2.0 N.m Note : (1) Repetitive rating : Pulse width limited by max. junction temperature Copyright@Dawin Electronics Corp. All right reserved 1/7 DM2G50SH6N Jan. 2012 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Symbol Parameter Values Conditions Min. Typ. Unit Max. BVCES C - E Breakdown Voltage VGE = 0V , IC =250uA 600 - - V BVCES/ Temperature Coeff. of VGE = 0V , IC = 1.0mA - 0.6 - V/ TJ Breakdown Voltage VGE(th) G - E threshold voltage IC = 10mA , VCE = VGE 5 - 8.5 V ICES Collector cutoff Current VCE = 600V , VGE = 0V - - 250 uA IGES G - E leakage Current VGE =20V - - 100 nA VCE(sat) Collector to Emitter IC= 50A, VGE= 15V @TC= 25 - 2.1 3.0 V saturation voltage IC= 50A, VGE= 15V @TC= 125 - 2.4 - V Cies Input capacitance VGE = 0V , f = 1 - 3250 - pF Coes Output capacitance VCE = 30V - 450 - pF Cres Reverse transfer capacitance - 125 - pF td(on) Turn on delay time VCC = 300V , IC = 50A - 20 - nS tr Turn on rise time VGE = 15V - 30 - nS td(off) Turn off delay time RG = 10 - 60 - nS Turn off fall time Inductive Load, @Tc=25 - 100 220 nS tf Eon Turn on Switching Loss - 1.1 - mJ Eoff Turn off Switching Loss - 2.4 - mJ Ets Total Switching Loss - 3.5 - mJ Tsc Short Circuit Withstand Time 10 - - uS Vcc = 300V, VGE = 15V @TC = 100 Qg Total Gate Charge Vcc = 300V - 140 200 nC Qge Gate-Emitter Charge VGE = 15V - 26 36 nC Qgc Gate-Collector Charge IC = 50A - 60 90 nC Copyright@Dawin Electronics Corp. All right reserved 2/7 DM2G50SH6N Jan. 2012 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=50A Min. Typ. Max. Tc =25 - 1.7 2.4 Tc =125 - 1.5 - Diode Reverse IF=50A, VR=300V Tc =25 - 110 - Recovery Time di/dt= -100A/uS Tc =125 - 120 - Diode Peak Reverse Tc =25 - 5.3 - Recovery Current Tc =125 - 6.3 - Diode Reverse Tc =25 - 290 - Recovery Charge Tc =125 - 375 - Unit V nS A nC Thermal Characteristics and Weight Symbol Parameter Conditions Values Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.45 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.8 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 200 g Copyright@Dawin Electronics Corp. All right reserved 3/7 DM2G50SH6N Jan. 2012 Performance Curves 140 15V 12V 20V 100 Common Emitter TC=125 120 Collector Current, IC [A] 120 Collector Current, IC [A] 140 Common Emitter TC=25 80 60 V GE = 10V 40 20 12V 20V 100 15V 80 60 V GE = 10V 40 20 0 0 0 2 4 6 0 8 2 Collector - Emitter Voltage, VCE(sat) [V] 4 Fig 2. Typical Output characteristics 160 60 Vcc=300V Load Current peak of square wave 50 120 Load Current [A] Collector Current, IC [A] 8 Collector - Emitter Voltage, VCE(sat) [V] Fig 1. Typical Output characteristics T C=25 T C=125 80 40 40 30 20 Duty cycle cycle :=50% Duty 50% C=125 TTc=125 Power Dissipation Power Dissipation =70W = 65W 10 0 0 0 1 2 3 4 5 6 0.1 1 Common Emitter TC=25 15 10 5 100A 50A IC=25A 0 0 4 8 12 16 100 1000 Fig 4. Load Current vs. Frequency Collector - Emitter Voltage, VCE(sat) [V] 20 10 Frequency [KHz] Collector - Emitter Voltage, VCE(sat) [V] Fig 3. Typical Saturation Voltage characteristics Collector - Emitter Voltage, VCE(sat) [V] 6 20 Gate - Emitter Voltage, VGE [V] 20 Common Emitter TC=125 15 10 5 50A 100A IC=25A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. V GE Fig 6. Typical Saturation Voltage vs. V GE Copyright@Dawin Electronics Corp. All right reserved 4/7 20 DM2G50SH6N Jan. 2012 7000 Gate - Emitter Voltage, VGE [V] 6000 Capacitance [pF] 15 Common Emitter V GE=0V,f=1MHZ T C=25 5000 Cies 4000 3000 2000 Coes Cres 1000 Common Emitter RL = 10 TC = 25 12 300V 9 TBD 3 0 0 1 0 10 40 Collector - Emitter Voltage, VCE [V] 80 120 Fig 8. Gate Charge characteristics 1000 Collector Current, IC [A] 1 0.1 0.01 100 10 Single Non-repetitive Pulse Tj125 VGE = 15V RG = 10 TC=25 IGBT : DIODE : 0.001 1.E-05 1 1.E-04 1.E -03 1.E -02 1.E -01 1.E +00 0 1.E +01 100 Rectangular Pulse Duration Time [sec] 200 300 400 500 600 700 Collector-Emitter Voltage, VCE [V] Fig 10. RBSOA Characteristic Fig 9. Transient Thermal Impedance 700 120 TJ150 VGE 15V Collector Current, Ic [A] 600 Collector Current, IC [A] 160 Gate Charge, Qg [nC] Fig 7. Capacitance characteristics Thermal Response Zthjc [ /W] 200V VCC = 100V 6 500 400 300 200 90 60 30 100 0 0 0 100 200 300 400 500 600 700 0 Collector-Emitter Voltage, VCE [V] 20 40 60 80 100 120 140 160 Case Temperature, TC [] Fig 11. SCSOA Characteristic Fig 12. rated Current vs. Case Temperature Copyright@Dawin Electronics Corp. All right reserved 5/7 DM2G50SH6N Jan. 2012 300 TJ150 VGE 15V Ic MAX. (Pulsed) 100 Collector Current, IC [A] Power Dissipation, PD [W] 400 300 200 100 100us 1ms 10 DC Operation Single Non-repetitive Pulse Tc = 25 Curves must be derated linerarly with increase In temperature 1 0.1 0.1 0 0 20 40 60 80 100 120 140 1 Fig14. SOA characteristics Forward Current, IF [A] 200 150 100 T C=25 50 0 1 2 100 Collector-Emitter Voltage, VCE [V] Fig 13. Power Dissipation vs. Case Temperature 0 10 160 Case Temperature, Tc [] T C=125 50us Ic MAX. (Continuous) 3 Forward Drop Voltage, VF [V] Fig15. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 6/7 1000 Jan. 2012 Package Out Line Information 7DM-1 Copyright@Dawin Electronics Corp. All right reserved 7/7 DM2G50SH6N