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Jan. 2012
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High Power Rugged Type IGBT Module
Description
DAWIN’S IGBT module devices are optimized to reduce losses
and switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
☞High Speed Switching
☞BVCES = 600V
☞Low Conduction Loss : VCE(sat) = 2.1 V (typ.)
☞Fast & Soft Anti-Parallel FWD
☞Short circuit rated : Min.10uS at TC=100℃
☞Reduced EMI and RFI
☞Isolation Type Package
Applications
Motor Drives, High Power Inverters, Welding Machine,
Induction Heating, UPS , CVCF, Robotics , Servo Controls,
High Speed SMPS
Absolute Maximum Ratings@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
Equivalent Circuit
Equivalent Circuit and Package
Package : 7DM-1 Series
Please see the package out line information
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
Tj
Tstg
Viso
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting screw Torque :M6
Power terminals screw Torque :M5
600
±20
75
50
100
50
100
10
275
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
uS
W
℃
℃
V
N.m
N.m
-
-
TC= 25℃
TC= 80℃
-
TC= 80℃
-
TC= 100℃
TC= 25℃
-
-
AC 1 minute
-
-
6
7
5
4
①②③
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
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Jan. 2012
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Electrical Characteristics of IGBT @ TC=25℃(unless otherwise specified)
Symbol Parameter
Values
Unit
Conditions
Min. Typ. Max.
C - E Breakdown Voltage
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltage
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
BVCES
∆BVCES/
∆TJ
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tsc
Qg
Qge
Qgc
600
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
0.6
-
-
-
2.1
2.4
3250
450
125
20
30
60
100
1.1
2.4
3.5
-
140
26
60
-
-
8.5
250
±100
3.0
-
-
-
-
-
-
-
220
-
-
-
-
200
36
90
V
V/℃
V
uA
nA
V
V
pF
pF
pF
nS
nS
nS
nS
mJ
mJ
mJ
uS
nC
nC
nC
VGE = 0V , IC=250uA
VGE = 0V , IC= 1.0mA
IC= 10mA , VCE = VGE
VCE = 600V , VGE = 0V
VGE =±20V
IC= 50A, VGE= 15V @TC= 25℃
IC= 50A, VGE= 15V @TC= 125℃
VGE = 0V , f = 1㎒
VCE = 30V
VCC = 300V , IC= 50A
VGE = 15V
RG= 10Ω
Inductive Load, @Tc=25℃
Vcc = 300V, VGE = 15V
@TC= 100℃
Vcc = 300V
VGE = 15V
IC= 50A
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Jan. 2012
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Electrical Characteristics of FRD @ TC=25℃(unless otherwise specified)
Symbol Parameter
Values
UnitConditions
Min. Typ. Max.
IF=50A
IF=50A, VR=300V
di/dt= -100A/uS
Tc =25℃
Tc =125℃
Tc =25℃
Tc =125℃
Tc =25℃
Tc =125℃
Tc =25℃
Tc =125℃
Diode Forward Voltage
Diode Reverse
Recovery Time
Diode Peak Reverse
Recovery Current
Diode Reverse
Recovery Charge
VFM
trr
Irr
Qrr
-
-
-
-
-
-
-
-
1.7
1.5
110
120
5.3
6.3
290
375
2.4
-
-
-
-
-
-
-
V
nS
A
nC
Thermal Characteristics and Weight
Symbol Parameter
Values
UnitConditions
Min. Typ. Max.
RθJC
RθJC
RθCS
Weight
Junction-to-Case(IGBT Part, Per 1/2 Module)
Junction-to-Case(DIODE Part, Per 1/2 Module)
Case-to-Sink ( Conductive grease applied)
Weight of Module
℃/W
℃/W
℃/W
g
-
-
-
-
0.45
0.8
-
200
-
-
0.05
-
Copyright@Dawin Electronics Corp. All right reserved
DM2G50SH6N
Jan. 2012
0
40
80
120
160
01 23 45 6
0
5
10
15
20
0 4 8 12 16 20
0
5
10
15
20
0 4 8 12 16 20
0
20
40
60
80
100
120
140
02468
0
20
40
60
80
100
120
140
02468
4/7
Performance Curves
20V
15V 12V
VGE = 10V
Common Emitter
TC=25℃
Common Emitter
TC=25℃
Common Emitter
TC=125℃
100A
50A
IC=25A
100A
50A
IC=25A
Duty cycle = 50%
TC=125℃
Power Dissipation = 65W
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
Gate – E mitter Voltage, VGE [V]
Collector – Emitter Voltage, VCE(sat) [V]
Collector – Emitter Voltage, VCE(sat) [V]
Gate – E mitter Voltage, VGE [V]
Frequency [KHz]
Load Cu r r ent [A]
Fig 1. Typical Output characteristics
Fig 3. Typical Saturation Voltage characteristics Fig 4. Load Current vs. Frequency
Fig 5. Typical Saturation Voltage vs. VGE
Fig 2. Typical Output characteristics
Fig 6. Typical Saturation Voltage vs. VGE
TC=125℃
TC=25℃
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
20V
15V
12V
Common Emitter
TC=125℃
Collector – Emitter Voltage, VCE(sat) [V]
Collector Current, IC[A]
VGE = 10V
0
10
20
30
40
50
60
0.1 1 10 100 1000
Duty cycle : 50%
Tc=125℃
Power Dissipation =70W
Vcc=300V
Load Current peak of square wave
Copyright@Dawin Electronics Corp. All right reserved
DM2G50SH6N
Jan. 2012
0
30
60
90
120
0 20406080100120140160
0.001
0.01
0.1
1
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
5/7
Fig 7. Capacitance characteristics Fig 8. Gate Charge characteristics
Fig 9. Transient Thermal Impedance Fig 10. RBSOA Characteristic
Fig 11. SCSOA Characteristic
1
10
100
1000
0 100 200 300 400 500 600 700
Single Non-repetitive
Pulse Tj!125℃
VGE = 15V
RG= 10"
0
100
200
300
400
500
600
700
0 100 200 300 400 500 600 700
Collector Current, IC[A]
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Collector Current, IC[A]
0
1000
2000
3000
4000
5000
6000
7000
110
Cies
Coes
Cres
Common Emitter
VGE=0V,f=1MHZ
TC=25℃
TC=25℃
IGBT :
DIODE :
Collector – Emitter Voltage, VCE [V]
Capacit ance [pF]
Ga te C har g e , Qg [nC ]
Gate – E mitter Voltage, VGE [V]
Rectangular Pulse Duration Time [sec]
Thermal Response Zthjc [ /W]
℃
TBD
0
3
6
9
12
15
0 40 80 1 20 160
Common Emitter
RL= 10#
TC= 25℃
VCC = 100V
200V
300V
Fig 12. rated Current vs. Case Temperature
Case Temperatu re, TC[℃]
C o lle c to r C urre nt, Ic [A ]
TJ!150℃
VGE $ 15V
Copyright@Dawin Electronics Corp. All right reserved
DM2G50SH6N
Jan. 2012
0
50
100
150
200
0123
0
100
200
300
400
0 20 40 60 80 100 120 140 160
Fig 13. Power Dissipation vs. Case Temperature
Case Temperatu re, Tc [℃]
Power Diss ipa tion, PD[W]
TJ!150℃
VGE $ 15V
Fig15. Forward characteristics
Forward Drop Voltage, VF[V]
Forward Current , I F[A]
TC=125℃TC=25℃
300
100
10
1
0.1
0.1 1
6/7
10 100 1000
Single Non-repetitive
Pulse Tc = 25℃
Curves must be derated
linerarly with increase
In temperature
Collector Current, IC[A]
Collector-Emitter Voltage, VCE [V]
DC Operation
1ms 100us
50us
I c MAX. (Pulsed)
I c MAX. (Cont inuous)
Fig14. SOA characteristics
Copyright@Dawin Electronics Corp. All right reserved
DM2G50SH6N
Jan. 2012
Package Out Line Information
7/7
7DM-1