Document Number: 81019 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.9, 29-Jun-09 1
Infrared Emitting Diode, 875 nm, GaAlAs
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors
DESCRIPTION
The TSHA520. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control and free air data transmission
systems
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorbtion of 875 nm radiation in glass
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8390
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSHA5200 40 ± 12 875 600
TSHA5201 50 ± 12 875 600
TSHA5202 60 ± 12 875 600
TSHA5203 65 ± 12 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA5200 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA5201 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA5202 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
TSHA5203 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2.5 A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019
2Rev. 1.9, 29-Jun-09
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors Infrared Emitting Diode, 875 nm,
GaAlAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
01020304050607080 90 100
21142
Tamb - Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA
= 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
Tamb - Ambient Temperature (°C)
21143
IF - Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.6 mV/K
Reverse current VR = 5 V IR100 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Temperature coefficient of φeIF = 20 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 12 deg
Peak wavelength IF = 100 mA λp875 nm
Spectral bandwidth IF = 100 mA Δλ 80 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr600 ns
IF = 1 A tr300 ns
Fall time IF = 100 mA tf600 ns
IF = 1 A tf300 ns
Virtual source diameter d 3.7 mm
Document Number: 81019 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.9, 29-Jun-09 3
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Infrared Emitting Diode, 875 nm,
GaAlAs Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A, tp = 100 µs
TSHA5200 VF2.8 3.5 V
TSHA5201 VF2.8 3.5 V
TSHA5202 VF2.8 3.5 V
TSHA5203 VF2.8 3.5 V
Radiant intensity
IF = 100 mA, tp = 20 µs
TSHA5200 Ie25 40 125 mW/sr
TSHA5201 Ie30 50 125 mW/sr
TSHA5202 Ie36 60 125 mW/sr
TSHA5203 Ie50 65 125 mW/sr
IF = 1 A, tp = 100 µs
TSHA5200 Ie200 330 mW/sr
TSHA5201 Ie260 400 mW/sr
TSHA5202 Ie330 460 mW/sr
TSHA5203 Ie400 530 mW/sr
Radiant power IF = 100 mA, tp = 20 µs
TSHA5200 φe22 mW
TSHA5201 φe23 mW
TSHA5202 φe24 mW
TSHA5203 φe25 mW
t
p
- Pulse Duration (ms)
94 8003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
tp/T=0.01
I
FSM
= 2.5 A (single pause)
0.05
0.1
0.2
0.5
I - Forward Current (A)
F
VF- Forward Voltage (V)
94 8005
101
102
103
104
tp = 100 µs
tp/T= 0.001
43210
I - Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
94 8006
103
101102104
100
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSHA 5200
TSHA 5201
TSHA 5202
TSHA 5203
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019
4Rev. 1.9, 29-Jun-09
TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors Infrared Emitting Diode, 875 nm,
GaAlAs
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 8007
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
140
94 8020
IF= 20 mA
Φ
Tamb- Ambient Temperature (°C)
780880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
pe
Φ
ee )/
λ
()
λ
() rel =
λΦΦ (
Φ
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
94 8008
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
96 12121
2.54 nom.
35.9 ± 0.55
Ø 5.8± 0.15
12.9 ± 0.3
7.7 ± 0.15
8.7 ± 0.3
0.5 + 0.15
- 0.05
1 min.
1.1 ± 0.25
(5.1)
< 0.7
AC
R 2.49 (sphere)
Area not plane
Ø 5 ± 0.15
0.5 + 0.15
- 0.05
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5258.04-4
Issue: 8; 19.05.09
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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