BA892
Jul-11-20011
Silicon Rf Switching Diode
For band switching in TV / VTR
tuners up to 2GHz
Low forward resistance,
small capacitance,
small inductance
1VES05991
2
Type Marking Pin Configuration Package
BA892 A 1 = C 2 = A SCD80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage 35 V
VR
Forward current mA
IF100
-55 ... 125 °COperating temperature range Top
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
370 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BA892
Jul-11-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Values UnitSymbol
min. max.typ.
DC characteristics
IR- - nAReverse current
VR = 20 V 20
VF- - 1 VForward voltage
IF = 100 mA
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
CT
0.65
0.6
0.92
0.85
1.3
1.1
pF
Forward resistance
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
0.45
0.36
0.7
0.5
Reverse resistance
VR = 1 V, f = 100 MHz 1/gp- 100 - k
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA - ns
rr - 120
-Series inductance Ls- nH0.6
BA892
Jul-11-20013
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHD07009
C
T
R
V
10 20 V 30
0.4
0.8
1.2
1.6
pF
2.0
Forward resistance rf = f (IF)
f = 100MHz
10
EHD07010
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
Forward current IF = f (VF)
TA = 25°C
0.5 0.6 0.7 0.8 0.9 1 V1.2
VF
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
IF
