BA892 Silicon Rf Switching Diode For band switching in TV / VTR 2 tuners up to 2GHz Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892 A 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 35 V Forward current IF 100 mA Operating temperature range Top -55 ... 125 C Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Junction - soldering point1) RthJS 370 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-11-2001 BA892 Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. IR - - 20 nA VF - - 1 V DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 0.65 0.92 1.3 VR = 3 V, f = 1 MHz 0.6 0.85 1.1 Forward resistance rf IF = 3 mA, f = 100 MHz - 0.45 0.7 IF = 10 mA, f = 100 MHz - 0.36 0.5 1/gp - 100 - k rr - 120 - ns Ls - 0.6 - nH Reverse resistance VR = 1 V, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance 2 Jul-11-2001 BA892 Diode capacitance CT = f (VR) Forward resistance rf = f (I F) f = 100MHz f = 1MHz CT EHD07009 2.0 pF EHD07010 10 1 rf 1.6 1.2 10 0 0.8 0.4 0.0 0 10 20 V 10 -1 30 10 -1 10 0 10 1 mA 10 2 F VR Forward current IF = f (VF ) TA = 25C 10 3 mA IF 10 2 10 1 10 0 10 -1 10 -2 0.5 0.6 0.7 0.8 0.9 1 V 1.2 VF 3 Jul-11-2001