VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6073US thru 1N6081US
1N6073 thru 1N6081
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability
applications where a fail ure cann ot be tol era ted. T hese 3, 6, and 12 Amp rated
rectifiers (TEC =70ºC) in different package sizes with working peak reverse
voltages from 50 to 150 volts are hermetically sealed using voidless-glass
construction and an internal “Category I” metallurgical bond. These devices
are also available in axial-lead package configurations for through-hole
mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru
1N6081). Microsemi also offers numerous other rectifier products to meet
higher and lo wer current rati ngs with various recovery time spee d requ irem ents
including standard, fast and ultrafast device types in both through-hole and
surface mount packages.
Package “A”
(or “D-5A”)
Package “E”
(or “D-5B”) Package “G”
(or “D-5C”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular 1N6073US to 1N6081US series
• Voidless hermetically-sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• Options for screening in accordance with MIL-PRF-
19500/503 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or MSP prefix respectively , e.g.
MX6076, MV6079, MSP6081, etc.
• Axial-leaded e quivalents also available (see separate
data sheet for 1N6073 thru 1N6081)
• Ultrafast recovery rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
• High forward surge current capability
• Low thermal resistance for higher power
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +155oC
• Storage Temperature: -65oC to +155oC
• Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073US-6075US, 75 Amps for 1N6076US-6078US,
and 175 Amps for 1N6079US-6081US at 8.3 ms half-
sine wave
• Average Rectified For ward Current (IO) at TEC= +70oC:
1N6073US thru 1N6075US: 3.0 Amps
1N6076US thru 1N6078US: 6.0 Amps
1N6079US thru 1N6081US: 12.0 Amps
Average Rectified For ward Current (IO) at TA=55oC:
1N6073US thru 1N6075US: 0.85 Amps
1N6076US thru 1N6078US: 1.3 Amps
1N6079US thru 1N6081US: 2.0 Amps
• Thermal Resistance (RθJEC): 13oC/W for 1N6073US-
6075US, 8.5oC/W for 1N6076US-6078US, and
5.0oC/W for 1N6079US-6081US
• Solder temperature: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: End caps are solid silv er (Ag)
with Tin/Lead (Sn/Pb) finish
• MARKING: None
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-481-B
• Weight: 1N6073 thru 1N6075: 193 mg
1N6076 thru 1N6078: 539 mg
1N6079 thru 1N6081: 1100 mg
• See package dimensions and recommended pad
layouts on last page for all three package sizes
Microsemi
Scottsdale Division Page 1
Copyright © 2005
6-19-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6073US thru 1N6081US
1N6073 thru 1N6081
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise specified
MAXIMUM
FORWARD
VOLTAGE
(PULSED)
PULSED
TEST
CURRENT
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
VF @ IF
AVERAGE
RECTIFIED
CURRENT IO
@ TEC = 70ºC
AVERAGE
RECTIFIED
CURRENT IO
@ TA = 55ºC
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
MAXIMUM
REVERSE
RECOVERY
TIME*
trr
MAXIMUM
SURGE
CURRENT
IFSM
VOLTS VOLTS AMPS AMPS AMPS
μA ns AMPS
1N6073US 50 2.04 9.4 3.0 0.85 1.0 30 35
1N6074US 100 2.04 9.4 3.0 0.85 1.0 30 35
1N6075US 150 2.04 9.4 3.0 0.85 1.0 30 35
1N6076US 50 1.76 18.8 6.0 1.3 5.0 30 75
1N6077US 100 1.76 18.8 6.0 1.3 5.0 30 75
1N6078US 150 1.76 18.8 6.0 1.3 5.0 30 75
1N6079US 50 1.50 37.7 12.0 2.0 10.0 30 175
1N6080US 100 1.50 37.7 12.0 2.0 10.0 30 175
1N6081US 150 1.50 37.7 12.0 2.0 10.0 30 175
*NOTE: IF = 0.5 A, IRM = 1.0 A, and IR(REC) = 0.25 A
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VFMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IRMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
PACKAGE DIMEN SIONS
PACKAGE A (1N6073US thru 1N6075US)
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5A” INCHES mm
A 0.246 6.25
B 0.067 1.70
C 0.105 2.67
INCHES mm
MIN MAX MIN MAX
BD .097 .103 2.46 2.62
BL .185 .200 4.70 5.08
ECT .019 .028 0.48 0.71
S .003 --- 0.08 ---
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
Microsemi
Scottsdale Division Page 2
Copyright © 2005
6-19-2005 REV B
as an optional spot for cement.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
VOIDLESS HERMETICALLY SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS POWER
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6073US thru 1N6081US
1N6073 thru 1N6081
PACKAGE E (1N6076US thru 1N6078US)
E-MELF-PKG (D-5B)
shown in the pad layout.
Note: If mounting requires adhesive separate from the solder,
an additional 0.080 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
PACKAGE G (1N6079US thru 1N6081US)
G-MELF-PKG (D-5C)
shown in the pad layout.
Note: If mounting requires adhesive separate from the solder,
an additional 0.090 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
Microsemi
Scottsdale Division Page 3
Copyright © 2005
6-19-2005 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
