1
Motorola Thyristor Device Data
Thyristors
Silicon Controlled Rectifiers
... designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
•Glass Passivated Junctions with Center Gate Fire for Greater Parameter
Uniformity and Stability
•Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
•Blocking Voltage to 800 Volts
•300 A Surge Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Peak Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = 25 to 125°C) 2N6504
2N6505
2N6506
2N6507
2N6508
2N6509
VDRM, VRRM 50
100
200
400
600
800
Volts
Forward Current (TC = 85°C)
(180° Conduction Angle) IT(RMS)
IT(AV) 25
16 Amps
Peak Non-repetitive Surge Current — 8.3 ms
(1/2 Cycle, Sine Wave) 1.5 ms ITSM 300
350 Amps
Forward Peak Gate Power PGM 20 Watts
Forward Average Gate Power PG(AV) 0.5 Watt
Forward Peak Gate Current IGM 2 Amps
Operating Junction Temperature Range TJ–40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
*THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by 2N6504/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
2N6504
thru
2N6509
CASE 221A-04
(TO-220AB)
STYLE 3
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
K
AG
*
*Motorola preferred devices
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
*Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C
TJ = 125°C
IDRM, IRRM —
——
—10
2µA
mA
*Forward “On” Voltage(1)
(ITM = 50 A) VTM — — 1.8 Volts
*Gate Trigger Current (Continuous dc) TC = 25°C
(Anode Voltage = 12 Vdc, RL = 100 Ohms) TC = –40°CIGT —
——
25 40
75 mA
*Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = –40°C) VGT — 1 1.5 Volts
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts
*Holding Current
(Anode Voltage = 12 Vdc, TC = –40°C) IH— 35 40 mA
*Turn-On Time
(ITM = 25 A, IGT = 50 mAdc) tgt — 1.5 2 µs
Turn-Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq—
—15
35 —
—
µs
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated VDRM, Exponential Waveform) dv/dt — 50 — V/µs
*Indicates JEDEC Registered Data.
1. Pulse Test: Pulse Width
p
300 µs, Duty Cycle
p
2%.
C
T , MAXIMUM CASE TEMPERATURE ( C)
°
dc180
°
16
120
80
90
100
110
130
60
°
α
= 30
°
0 4.0 8.0 12 20
α
= CONDUCTION ANGLE
FIGURE 1 — AVERAGE CURRENT DERATING
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
α
90
°
P , AVERAGE POWER (WATTS)
(AV)
180
°
90
°
24
0
8.0
16
32
TJ = 125
°
C
dc
60
°
α
= 30
°
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
160 4.0 8.0 12 20
α
= CONDUCTION ANGLE
α
3
Motorola Thyristor Device Data
FIGURE 3 — MAXIMUM FORWARD VOLTAGE FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
FIGURE 5 — CHARACTERISTICS AND SYMBOLS
FIGURE 6 — THERMAL RESPONSE
IT
1.0
0.02
0.03
0.05
0.07
0.1
100
0.2
0.3
0.5
0.7
0.2 0.3 0.5 1.0 2.0
25
°
C
125
°
C
0.4
0.1
Z
θ
JC(t) = R
θ
JC
•
r(t)
1 CYCLE
1.0
200 SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
TC = 85
°
C
f = 60 Hz
NUMBER OF CYCLES
225
250
275
300
20
2.0 3.0 4.0 6.0 8.0 10
–I
+V
+I
–V IDRM VDRM
IRRM
VT
IH
VRRM FORWARD
BLOCKING
REGION
FORWARD
BREAKOVER
POINT
REVERSE
BLOCKING
REGION
REVERSE
AVALANCHE
REGION
0.1 0
0.01
t, TIME (ms)
3.0 5.0
175
0.2
0.3
0.5
0.7
7.0
5.0
1.0
2.0
10
50
3.0
20
30
70
vF, INSTANTANEOUS VOLTAGE (VOLTS)
1.2 2.01.6 2.4 2.80.8
30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k
I , PEAK SURGE CURRENT (AMP)
TSM
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED) F
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
4 Motorola Thyristor Device Data
I , HOLDING CURRENT (mA)
H
TYPICAL TRIGGER CHARACTERISTICS
1401201008060400–60
30
–20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
50
20
10
5.0
40
0.9
1.1
0.8
0.7
0.6
0.5
0.4
7.0
1.0
OFF-STATE VOLTAGE = 12 V
FIGURE 8 — GATE TRIGGER VOLTAGE
FIGURE 9 — HOLDING CURRENT
FIGURE 7 — GATE TRIGGER CURRENT
OFF-STATE VOLTAGE = 12 V
30
50
20
10
5.0
40
7.0
1401201008060400–60 –20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
1401201008060400–60 –20–40 20
TJ, JUNCTION TEMPERATURE (
°
C)
I , GATE TRIGGER CURRENT (mA)
GT
V , GATE TRIGGER VOLTAGE (VOLTS)
GT
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.022 0.36 0.55
K0.500 0.562 12.70 14.27
L0.045 0.055 1.15 1.39
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
A
K
L
V
GD
N
Z
H
Q
FB
1 2 3
4
–T–
SEATING
PLANE
S
R
J
U
TC
CASE 221A-04
(TO–220AB)
6 Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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2N6504/D
*2N6504/D*
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