Bulletin I25186 rev. B 04/00 ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) 515A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capibility Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AC (B-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST303C..L Units 515 A 55 C 995 A 25 C @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 289 KA2s V DRM/V RRM 400 to 1200 V tq range (*) 10 to 30 s - 40 to 125 C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t TJ (*) tq = 10 to 20s for 400 to 800V devices tq = 15 to 30s for 1000 to 1200V devices Document Number: 93675 www.vishay.com 1 ST303C..L Series Bulletin I25186 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST303C..L 08 800 900 10 1000 1100 12 1200 1300 50 Current Carrying Capability ITM ITM Frequency ITM 180 el 180oel 50Hz 400Hz 1130 1010 950 820 1800 1850 1540 1570 5660 2830 4990 2420 1000Hz 680 530 1560 1300 1490 1220 2500Hz 230 140 690 510 540 390 50 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd VDRM VDRM Units 100s o 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/s Heatsink temperature 40 55 40 55 40 55 C Equivalent values for RC circuit 10 / 0.47F 10 / 0.47F 10 / 0.47F On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST303C..L Units Conditions 515 (190) A 55 (85) C 995 Max. peak, one half cycle, 7950 non-repetitive surge current 8320 Maximum I2 t for fusing t = 10ms A 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied KA2 s 204 Document Number: 93675 reapplied t = 10ms 316 224 Maximum I2 t for fusing No voltage t = 8.3ms 7000 289 I 2 t double side (single side) cooled DC @ 25C heatsink temperature double side cooled 6690 I 2t 180 conduction, half sine wave 3160 KA2 s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.vishay.com 2 ST303C..L Series Bulletin I25186 rev. B 04/00 On-state Conduction Parameter V TM ST303C..L Units Max. peak on-state voltage 2.16 V T(TO)1 Low level value of threshold 1.44 voltage V T(TO)2 High level value of threshold voltage rt 1 0.56 IH IL Typical atching current 1000 600 (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. m High level value of forward slope resistance Maximum holding current t2 V 0.57 slope resistance r ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse 1.48 Low level value of forward Conditions (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. mA T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A Switching Parameter di/dt ST303C..L Units Max. non-repetitive rate of rise 1000 of turned-on current t Typical delay time d tq A/s Max. turn-off time (*) Max 30 TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s 0.83 Min 10 Conditions s Resistive load Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt: see table in device code (*) t = 10 to 20s for 400 to 800V devices; t = 15 to 30s for 1000 to 1200V devices. q q Blocking Parameter ST303C..L Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/s IRRM IDRM Max. peak reverse and off-state leakage current 50 mA T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power ST303C..L Units 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp 5ms V T J = TJ max, tp 5ms 200 mA 3 V T J = 25C, V A = 12V, Ra = 6 IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V Document Number: 93675 Conditions 60 T J = TJ max, rated VDRM applied www.vishay.com 3 ST303C..L Series Bulletin I25186 rev. B 04/00 Thermal and Mechanical Specification Parameter J T stg ST303C..L Max. operating temperature range -40 to 125 Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, C DC operation single side cooled K/W 0.05 RthC-hs Max. thermal resistance, 0.011 case to heatsink DC operation double side cooled DC operation single side cooled K/W 0.005 Mounting force, 10% wt Conditions 0.11 junction to heatsink F Units Approximate weight Case style DC operation double side cooled 9800 N (1000) (Kg) 250 g TO - 200AC (B-PUK) See Outline Table RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180 0.012 0.010 0.008 0.008 120 0.014 0.015 0.014 0.014 90 0.018 0.018 0.019 0.019 60 0.026 0.027 0.027 0.028 30 0.045 0.046 0.046 0.046 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 30 1 2 RRM 3 C 12 L H 1C 2 3 -4 5 Voltage Thyristor Essential 3 == Fast Ceramic 4 code: turn part 5 Code Puk offnumber 6 x 1007= V K 1 8 9 10 -6(See 7 L Reapplied = Voltage Puk Case dv/dt Rating TO-200AC code Table) (for t(B-PUK) dv/dt - tq combinations available -test 8 t condition) q dv/dt (V/s) 20 10 CN 12 CM up to 800V 15 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) CL 20 CK 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) - code 9 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)t q(s) q 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) - Critical dv/dt: 10 None = 500V/sec (Standard value) L = 1000V/sec (Special selection) t q(s) 15 18 only for 20 1000/1200V 25 30 CL CP CK CJ -- 50 DN DM DL DK 100 EN EM EL EK 200 FN * FM FL * FK * 400 HN HM HL HK -DP DK DJ DH --EK EJ EH ----FK * HK FJ * HJ FH HH *T Standard part number. All other types available only on request. Document Number: 93675 www.vishay.com 4 ST303C..L Series Bulletin I25186 rev. B 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 0 6 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20 5 5 8 .5 (2 .3 ) D I A . M AX . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) Quote All dimensions betweeninupper millimeters and lower (inches) pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 1 30 S T 3 0 3 C ..L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .1 1 K / W 1 20 1 10 1 00 90 C o nduc tion A ng le 80 30 60 70 90 1 20 60 180 50 40 0 50 1 00 15 0 2 00 2 50 300 35 0 M a xim u m A llo w a ble H e a t sin k T e m p e rat u re ( C ) M axim u m A llo w a ble H e a t sin k Te m p e ra tu r e ( C ) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 130 ST 3 0 3 C ..L S e rie s (Sin gle S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 120 110 100 90 80 C o ndu c tio n Pe rio d 70 60 30 50 40 60 9 0 120 30 18 0 20 0 1 00 2 00 300 4 00 DC 50 0 A v e ra g e O n -st a te C u rr e n t (A ) A v e ra g e O n -st a t e C urr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Document Number: 93675 60 0 www.vishay.com 5 ST303C..L Series ST 3 0 3 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ -hs (D C ) = 0 .0 5 K / W 120 110 100 90 Co n duc tion Ang le 80 70 60 30 60 50 9 0 120 40 180 30 0 100 20 0 300 4 00 50 0 600 70 0 1 4 00 100 90 C o nduc tio n Pe rio d 80 70 30 60 60 90 50 1 20 40 180 30 DC 20 0 20 0 80 0 Co n duc tio n A ng le 60 0 40 0 ST 3 0 3 C ..L S e rie s T J = 1 2 5 C 20 0 0 10 0 20 0 3 0 0 40 0 5 0 0 6 0 0 7 00 8 00 2600 2400 DC 180 2200 120 2000 90 1800 60 1600 30 1400 1200 RMS Limit 1000 800 600 400 200 0 0 200 400 A v e ra g e O n - sta t e C u rre n t ( A ) 6000 5500 5000 4500 4000 ST303C..L Series 3500 3000 1 80 0 1 0 00 10 100 N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Document Number: 93675 1 2 00 C o ndu ctio n P e rio d ST303C..L Series TJ = 125C 600 800 1000 1200 Fig. 6 - On-state Power Loss Characteristics P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) Peak Half Sin e Wa ve O n-state Current (A) At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 60 0 Average On -state Curren t (A) Fig. 5 - On-state Power Loss Characteristics 7000 40 0 A v e ra g e O n -st a te C urre n t (A ) 1 0 00 0 110 Fig. 4 - Current Ratings Characteristics R M S Lim it 1 2 00 ST 3 0 3 C ..L Se rie s (D o u b le S id e C o o le d ) R th J- hs (D C ) = 0 .0 5 K /W 120 A v e ra g e O n - st a te C u rr e n t (A ) 180 120 9 0 6 0 3 0 1 6 00 130 Fig. 3 - Current Ratings Characteristics 2 0 00 1 8 00 M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (C ) 130 Maximum Average O n-state Pow er Loss (W ) M a x im u m A v e ra g e O n -st a t e P o w e r Lo s s (W ) M a x im u m A llo w a b le He a t sin k T e m p e ra t u re ( C ) Bulletin I25186 rev. B 04/00 8000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e r su s P u lse T ra in D ura t io n . C o n tro l O f C o n d u c tio n M a y N o t B e M a in t a in e d . 7000 In it ia l T J = 1 2 5 C N o V o lt a g e R e a pp lie d 6500 R a te d V RRM R e a p p lie d 6000 7500 5500 5000 4500 4000 3500 S T 3 0 3 C ..L S e rie s 3000 0.01 0.1 1 P u ls e Tr a in D u ra t io n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.vishay.com 6 ST303C..L Series Bulletin I25186 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs (K / W ) Instantaneous On-state Current (A) 10000 1000 TJ = 25C TJ = 125C ST303C..L Series 100 0 1 2 3 4 5 6 7 8 1 S t e a d y S ta t e V a lu e R th J- hs = 0 .1 1 K / W (S in gle S id e C o o le d ) R th J-hs = 0 .0 5 K / W 0 .1 (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 1 S T 3 0 3 C ..L S e rie s 0 .0 0 1 0 .0 0 1 0 .0 1 280 5 00 A 260 240 3 00 A M a xim u m R e v e rse R e c o v e ry C ur re n t - I rr (A ) M axim um Reverse Recovery Charge - Q rr (C) 320 I TM = 1 00 0 A 2 00 A 1 00 A 220 200 180 160 140 ST303C..L Series TJ = 125 C 120 100 80 10 20 30 40 50 60 70 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 300 0 .1 Sq u a re W a v e P u lse D u ra tio n (s ) Instantan eous O n-state Voltage (V) 90 100 18 0 17 0 16 0 15 0 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 I TM = 10 00 A 5 00 A 3 00 A 20 0 A 10 0 A S T 3 0 3 C ..L S e rie s TJ = 125 C 10 20 30 40 50 60 70 80 9 0 10 0 Rate O f Fa ll O f On -state Current - di/dt (A/s) R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -s ta te C u rr e n t (A ) 1 E4 1 000 200 50 0 400 50 Hz 10 00 1 50 0 Sn ubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80% V DR M 1 E3 20 0 0 2 50 0 5 00 40 0 20 0 15 00 ST303 C. .L Serie s Sinuso ida l pulse T C = 40 C tp 1 E2 1 E3 ST303 C. .L Se ries Sinuso ida l p ulse T C = 55 C 3 00 0 1 E14E 4 E1 1E 1 tp 1 E2 10 0 5 0 H z Sn ubbe r c ircu it R s = 1 0 o hm s C s = 0.4 7 F V D = 80 % V DR M 20 00 25 00 30 00 1 E2 1 E1 100 1 E3 1 E4 P u lse Ba se w id t h ( s) P u lse Ba se w id t h ( s) Fig. 13 - Frequency Characteristics Document Number: 93675 www.vishay.com 7 ST303C..L Series Bulletin I25186 rev. B 04/00 Pe a k O n -st a t e C u r re n t (A ) 1E 4 Snub ber c irc uit R s = 10 o hm s C s = 0 .47 F V D = 8 0% V D R M 500 1E 3 50 Hz 40 0 20 0 10 0 Snu bbe r c irc uit R s = 10 oh m s C s = 0 .47 F V D = 8 0% V DR M 100 0 1 50 0 50 H z 1 50 0 20 0 0 20 00 2 50 0 2 50 0 3 00 0 1E 2 40 0 20 0 100 500 1 000 ST3 03 C.. L Serie s Trap ezo id al p ulse TC = 40 C di/d t = 50 A/s tp 1E 1 1 E1 1 E2 1 E3 ST30 3C ..L Se ries Tra pe zoidal pulse T C = 55C di/dt = 5 0A /s 30 0 0 tp 1 E1 4E 41 E1 1E 1 1E 2 Pu lse B a se w id th ( s) 1 E3 1E4 P u lse Ba se w id t h ( s) Fig. 14 - Frequency Characteristics P e a k O n - st a t e C u rre n t (A ) 1E4 Snub be r c irc uit R s = 10 o hm s C s = 0 .47 F V D = 8 0% V D R M 1E3 1 000 200 400 50 0 10 0 50 Hz Snu bbe r c irc uit R s = 1 0 o hm s C s = 0.47 F V D = 80% V D RM 50 0 20 0 1 00 50 Hz 1 0 00 1 50 0 1 5 00 2 00 0 20 00 2 50 0 1E2 40 0 2 50 0 30 0 0 ST30 3C ..L Se ries Trapezo idal pulse TC = 4 0C di/dt = 1 00 A/s tp 1E1 1 E1 1 E2 1 E3 3 0 00 ST303 C.. L Serie s Tra pezo id al p ulse T C = 5 5C di/dt = 10 0A /s tp 1 E14E 41 E11E 1 1E2 1 E3 1E4 Pu lse B a se w id th ( s) P u lse B ase w id t h ( s) Fig. 15 - Frequency Characteristics P e a k O n -st a t e C u rre n t (A ) 1E 5 tp 1E 4 ST3 03C ..L Se ries Rec tang ula r pulse di/dt = 5 0A /s 20 jo ules pe r pulse 2 3 5 10 5 1 1E 3 20 jo ules pe r pulse 10 3 2 0 .5 1 0 .4 0. 5 1E 2 0. 4 tp 1E 1 1E1 ST30 3C ..L Se ries Sin uso idal pulse 1E2 1E3 P u lse B ase w id t h ( s) 1 E14E 41 E1 1E 1 1 E2 1 E3 1E4 Pu lse B a se w id t h (s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics Document Number: 93675 www.vishay.com 8 ST303C..L Series Bulletin I25186 rev. B 04/00 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 C 1 Tj=-40 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST303C..L Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 93675 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier's Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier(R), IR(R), the IR logo, HEXFET(R), HEXSense(R), HEXDIP(R), DOL(R), INTERO(R), and POWIRTRAIN(R) are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: 99901 Revision: 12-Mar-07 www.vishay.com 1