TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 1 Version: C15
P-Channel Power MOSFET
-20V, -2.8A, 130mΩ
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-
resistance
Application
● Telecom power
● Consumer Electronics
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
V
DS
-20 V
R
DS(on)
(max)
V
GS
= -4.5V
130 mΩ
V
GS
= -2.5V
190
Q
g
7.2 nC
SOT
-
23
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current
(Note 1)
T
C
= 25°C I
D
-2.8 A
T
C
= 100°C -1.6
Pulsed Drain Current
(Note 2)
I
DM
-10 A
Continuous Source Current (Diode Conduction)
(Note 3)
I
S
-1 A
Total Power Dissipation T
A
= 25°C P
DTOT
0.7 W
T
A
= 70°C 0.45
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Ambient Thermal Resistance (PCB mounted) R
ӨJA
175 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 2 Version: C15
(T
C
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL
MIN TYP MAX
UNIT
Static
(Note 4)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
-20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(th)
-0.6 -0.7 -1 V
Gate Body Leakage V
GS
= ±12V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= -20V, V
GS
= 0V I
DSS
-- -- 1.0 µA
Drain-Source On-State Resistance V
GS
= -4.5V, I
D
= -2.8A R
DS(on)
-- 90 130 mΩ
V
GS
= -2.5V, I
D
= -2.0A -- 120 190
Dynamic
(Note 5)
Gate Resistance V
GS
= V
DS
=0V, f=1MHz
R
g
-- 7.5 -- Ω
Total Gate Charge V
DS
= -6V, I
D
= -2.8A,
V
GS
= -4.5V
Q
g
-- 7.2 --
nC
Gate-Source Charge Q
gs
-- 2.2 --
Gate-Drain Charge Q
gd
-- 1.2 --
Input Capacitance V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 480 -- pF
Output Capacitance C
oss
-- 460 --
Reverse Transfer Capacitance C
rss
-- 10 --
Switching
(Note 6)
Turn-On Delay Time V
DD
= -6V, R
L
= 6Ω,
V
GEN
= -4.5V,
R
G
= 6Ω
t
d(on)
-- 38 --
ns
Turn-On Rise Time t
r
-- 25 --
Turn-Off Delay Time t
d(off)
-- 43 --
Turn-Off Fall Time t
f
-- 5 --
Source-Drain Diode
(Note 4)
Forward On Voltage I
S
= -1A, V
GS
= 0V V
SD
-- -0.7 -1.3 V
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. Surface Mounted on a 1 in
2
pad of 2
OZ
Cu, t ≤ 10 sec.
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 3 Version: C15
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM2301ACX RFG SOT-23 3,000 pcs / 7” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 4 Version: C15
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 5 Version: C15
Electrical Characteristics Curve
(Tc= 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Response (R
θJA
)
Square Wave Pulse Duration (s)
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 6 Version: C15
PACKAGE OUTLINE DIMENSIONS
(Unit: Millimeters)
SOT-23
SUGGESTED PAD LAYOUT
(Unit: Millimeters)
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
TSM2301A
Taiwan Semiconductor
Document Number: DS_P0000043 7 Version: C15
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