TLP331, 332 (TLPa31) OFFICE MACHINE HOUSEHOLD USE EQUIPMENT PROGRAMMABLE CONTROLLERS AC/OC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 is no-base internal connection for high-EMI environments. Collector-Emitter Voltage : 55V (Min.) Isolation Voltage : 5000Vrms (Min.) UL Recognized : UL1577, File No, E67349 Current Transfer Ratio GaAs IRED & PHOTO-TRANSISTOR Unit in mm ef cr 2.5 MIN JEDEC EIAJ TOSHIBA 11-7Al1 Weight : 0.4g PIN CONFIGURATIO NS (TOP VIEW) CLASSI. CURRENT TRANSFER RATIO (Min.) | MarRKING TLP331 TLP332 om Ta =25C Ta= 25~75C| OF FICATION CLASSI 1 16 1 6 (*)|Ip=imA |Ip=0.5mA | Ip=lmA FICATION f VcE=0.5V | VoR=1.5V| VceR=0.5V or y Ls od y bs Rank BV 200% 100% 100% BV 4 Standard | 100% 50% 50% |BV, Blank | 3d ha 30 n4 (*) Ex. Standard : TLP331 SD OMMODE 2 LOATHODE Rank BV : TLP331 (BV) : 3:NC 3:NC Note : Application type name for certification test, 4 : EMITTER 4: EMITTER please use standard product type name, i.e. 5: COLLECTOR 5 :COLLECTOR TLP331 (BV) : TLP331 6 : BASE 6: NC 290 TLP331, 332 (TLP331) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current IF 60 mA a Forward Current Derating (Ta= 39C) Alp /C 0.7 mA/C & [Peak Forward Current (100s pulse, 100pps) Ipp 1 A Reverse Voltage VR 5 Vv Junction Temperature Tj 125 C Collector-Emitter Voltage VCEO 55 Vv Collector-Base Voltage (TLP331) VcBO 80 Vv & Emitter-Collector Voltage VECO 7 Vv 5 Emitter-Base Voltage (TLP331) VEBO 7 Vv Fe Collector Current Ic 50 mA A |Power Dissipation Po 150 mW Power Dissipation Derating (Ta = 25C) 4PC/C -15 mW /C Junction Temperature Tj 125 C Storage Temperature Range Tsug 55~125 C Operating Temperature Range Topr 55~100 C Lead Soldering Temperature (10 s) Tso] 260 C Total Package Power Dissipation Pp 250 mW Total Package Power Dissipation Derating (Ta= 25C) | Pryp/C 2.5 mW /C Isolation Voltage (AC, 1 min., RH = 60%) (Note 1) BVsS 5000 Vrms Note 1: Device considered a two terminal device : Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. 291 TLP331,332 (TLP331) INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL | TEST CONDITION | MIN. | TYP. | MAX.| UNIT a Forward Voltage VF Ip=10mA 1.0 1.15 |) 1.3 Vv 5) | Reverse Current Ig VR=5V 10 | pA Capacitance Cry V=0, f=1MHz _ 30; pF Collector-Emitter _ Breakdown Voltage V(BR)CEO |Ic=0.5mA 58 ~ ~ Vv Emitter-Collector _ Breakdown Voltage V(BR)ECO | IB =0.1mA 7 ~ ~ Vv Collector-Base Breakdown Voltage _ (TLP331) V(BR)CBO |i =0.1mA 80} | | V pe | Emitter-Base Breakdown Voltage _ S (TLP331) V(BR)EBO |!=0.1mA 7/}]]V 3 VcR=24V _ 10 | 100 | nA & | Collector Dark Current I CE & | vousen as wusnen CEO |Vop=24v, Ta=85c | 2} 50 | nA A | Collector Dark Current VCE =24V, Ta=85C (TLP331) ICER |Rpp=1M0 | O05) 10] WA Collector Dark Current _ (TLP331) IcBo |Vcp=1l0V _ Ol; nA DC Forward Current Gain _ _ (TLP331) hrE VcE=5V, Ic=0.5mA |] | 1000] Capacitance (Collector to Emitter) CCE V=0, f=1MHz _ 12} pF COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT 7 . Ip=limA, Vop=0.5V 100 | | 1200 Current Transfer Ratio Ic /IfF Rank BV 200 11200 %o Ip=0.5mA, Vcp=1.5V 50 | _ Low Input CTR Ic /T Flow) Rank BV 100 = = % Base Photo-current(TLP331) |Ipp Ip=imA, Vop=5V 5 uA Coll E Ic =0.5mA [p=1mA 0.4 ollector-Emitter Saturation Voltage VCK(sat) |I=1mA Pea BV = ae Wi v COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25~75C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a : Ip=1mA, VoR=0.5V 50 | _ Current Transfer Ratio Ic/Ip Rank BV 100 = = % Ip=0.5mA, Vop=1.5V = 50 | Low Input CTR Ic /IFdow) Rank BV = 100 %o 292 TLP331, 332 (TLP331) ISOLATION CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. |MAX.| UNIT Capacitance (Input to Output) Cs Vg=0, f=1MHz 0.8; pF Isolation Resistance Rs V=500V 5xX10!0] 10!4; 2 AC, 1 minute 5000 = _ : - Vrms Isolation Voltage BVs AC, 1 second (in oi!) |10000] DC, 1 minute (in oil) _ 10000; Vde SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. |MAX.| UNIT Rise Time tr 8 Fall Time tt Voc=10V a | I=2mA us Turn-on Time ton Ri =1002 10 = Turn-off Time toff _- 8) Turn-on Time ton Rp =4.7k0 (Fig.1) = 10 | Storage Time ts RBE=OPEN 50 _ BS Turn-off Time torr | YCC=5V, Ip=1.6mA | 300/ Turn-on Time ton RL=4.7k2 (Fig.1) = 12 | Storage Time ts RBE =470k2 (TLP331) 30 LS Turn-off Time tOFF Voc =5V, Ip=1.6mA 100 Fig.1 SWITCHING TIME TEST CIRCUIT Ip PVE wf LL Ru ts y R VCE VOE 4.5v CC BE K 0.5V ton torr RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. |MAX.| UNIT Supply Voltage Veco _ 5 25 Vv Forward Current Ip 1.6 25 mA Collector Current Ic 1 10 | mA Operating Temperature Topr -25/ 75 C 293 TLP331,332 (TLP331) Po - Ta be 3 ae a 2 = Za Be 120 PE a a ee a mote 80 Z ae < <2 z 26 40 = a al wd < 0 < 0 -20 0 20 40 60 80100120 ~20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Trp DR Ip Vp 4 PULSE WIDTHS 10046 Ta = 26C a Ta =25C a & 1 ie & & e 3 Fe oO 3 3 oS < Q = oo = e ty fe 4 5 fu 3 10 3 10 3 107 3 10 06 0.8 1.0 1.2 14 1.6 1.8 DUTY CYCLE RATIO. Dp FORWARD VOLTAGE Vy (V) 4Vp/ 4Ta IF Ipp VFP -3.2 _ 1 = 7 < 25 E PS -28 ~ Part a =300 ae = [3] A gy ~2.4 Se E100 ha w cea BO we aye 72.0 oe 50 o> > =7 5 30 i a ae 16 Sz < 2 s 10 = QS -12 & =