want hele eww - ~ ~ 84 DE R3465b74 0027740 of 3469674 FAIRCHILD SEMICONDUCTOR 84D 27790 D _ a ecriLD N-Channel Power MOSFETs, A Schlumberger Company 14 A, 60 V/100 V Power And Discrete Division Description _ TO-204AA These devices are n-channel, enhancement mode, power i MOSFETs designed especially for high power, high speed S applications, such as switching power supplies, UPS, AC : and DC motor controls, relay and solenoid drivers and : high energy pulse circuits. Vas Rated at +20 V ? 8 @ Silicon Gate for Fast Switching Speeds rsoaczoe @ Ipss, Rosjon), Specified at Elevated Temperature 2N6755 Rugged 2N6756 @ Low Drive Requirements @ Ease of Paralleling Maximum Ratings nn Rating Rating 5 Symbol! Characteristic 2N6756 2N6755 Unit Voss Drain to Source Voltage 100 60 Vv VocR Drain to Gate Voltage 100 60 v Res = 1 MQ Vas Gate to Source Voltage +20 +20 Vv Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 C Storage Temperatures Th Maximum Lead Temperature 300 300 C for Soldering Purposes, t 1/16 From Case for 10 s Maximum On-State Characteristics Roson) | Static Drain-to-Source 0.18 0.25 Q On Resistance arr Ip Drain Current A Gontinuous at Te = 25C 14 12 Continuous at To = 100C 9 8 lbw Pulsed 302 252 Maximum Thermal Characteristics Reuc Therma! Resistance, 1.67 1.67 C/W Junction to Case Pp Total Power Dissipation 75 75 WwW at To = 26C Linear Derating Factor 0.6 0.6 WLC Notes All values are JEDEC registered except as noted. For information concarning connection diagram and package outline, refer to Section 7. SEMICONDUCTOR 2N6755/2N6756 84D 27791 (T=39-1) Electrical Characteristics (To = 25C unless otherwise noted) Symbol Characteristic Min | Max Unit Test Conditions Off Characteristics Veryoss | Drain Source Breakdown Voltage Vv Veg =0 V, Ip=1 mA 2N6756 100? 2N6755 607 Ipss Zero Gate Voltage Drain Current 1 mA Vps = Rated Voss, Ves = 0 V | 4 Vps = Rated Voss, i Vas =0 V, To = 125C : lass Gate-Body Leakage Current 100 nA Ves = +20 V, Vpg =0 V On Characteristics Vasuh) Gate Threshold Voltage 2.0 4.0 v Ip =1 MA, Vps = Ves Rpsion) | Static Drain-Source On-Resistance! 2 Vas =10V 2N6756 0.18 ID=9A 2N6755 0.25 IDp=8A Q Ves = 10 V, To = 125C 2N6756 0.33 Ip=9 mA 2N6755 0.45 Ip=8A Vpsion) | Drain-Source On-Voltage! 2N6756 2.52 v Vas =10V; Ip=14A 2N6755 3.0 Vas = 10 V; Ilp=12 A Os Forward Transconductance! 4.0 12 S (%) Vos =10 V, Ip=9A Dynamic Characteristics ; Ciss Input Capacitance 350 800 pF Vps = 25 V, Vas =0 V Coss Output Capacitance 150 500 pF f= 1.0 MHz : Crss Reverse Transfer Capacitance 50 150 pF Switching Characteristics (To = 25C, Figures 9, 10) tyon) Turn-On Delay Time 30 ns Vop = 36 V, Ip=9 A t Rise Time 75 ns nes = * % Raen = 15 Q tacor Turn-Off Delay Time 40 ns t Fall Time 45 ns Qg Total Gate Charge 307 nc Ves =10 V, Ip=18 A Vpp = 55 V 2-4 - 68y pe aunae74 O0e??4e 3 J 3469674 FAIRCHILD SEMICONDUCTOR 84D 27792 D, i 2N6755/2N6756 1-39-11 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol Characteristic | Min Tye | Max | unit _ Test Conditions Source-Drain Diode Characteristics ls Continuous Source Current A 2N6756 14 2N6755 12 _ Isa Pulsed Source Current A 2N6756 307 2N6755 257 i Vsp Diode Forward Voltage 2N6756 0.90 1.8 Vv Is = 14 A; Vag =0 V 2N6755 0.85 1.7 Vv Ig =12 A; Vag=0 V tr Reverse Recovery Time 3002 ns Ves =O V, Ty = 150C lr =Isy, di-/dt = 100 A/uS Qar Reverse Recovery Charge 4.0? uC Veg =0 V, Ty = 150C Ip =Isup dle/dt = 100 A Notes 1. Pulse test: Pulse width <900 ys, Duty cycle <1% 2. Non-JEDEC registered value. Typical Performance Curves Figure 1 IbDRAIN CURRENTA Output Characteristics =10 0.8 4.0 1.6 2.0 VosDRAIN SOURCE VOLTAGEV Figure 2 Static Drain to Source Resistance ' Rpson)STATIC DRAIN TO SOURCE RESISTANCE 2 vs Drain Current = 10 2 wo 2 a 4 & 12 6 20 Ip DRAIN CURRENTA POCSETOF > erm, 2-5 aq 84 De sye5674 ooazzaa s Bf 3469674 FAIRCHILD SEMICONDUCTOR 84D 27793 D 2N6755/2N6756 7-39-11 Typical Performance Curves (Cont.) Figure 3 Transfer Characteristics Bw Vos = 10 +e Ls < doa 2 wu & 10 > o z 6 zs i a ~ Tj = 25C 2 Ty = -55C 0 2 4 6 8 a VasGATE TO SOURCE VOLTAGE~V POCISROF Figure 5 Capacitance vs Drain to Source Voltage 2 10 CCAPACITANCEpF 10 5 10" 10? VosDRAIN TO SOURCE VOLTAGEV Pooss90F Figure 7 Forward Biased Sate Operating Area i E 101 2 & & AREA MAY BE 2 LIMITED BY z 2 Zsa b = 5ETc = = Tr< 180C = g| SINGLE PULSE a= = CURRENT LIMITED 1071 1 2 5 10 2 5 VosDRAIN TO SOURCE VOLTAGEV PCT4S0r Figure 4 Temperature Variation of Gate to Source Threshold Voltage 09 0.8 0.7 NORMALIZED GATE THRESHOLD VOLTAGE 9 -50 0 se 700 150 T,JUNCTION TEMPERATUREC pcose41F Figure 6 Gate to Source Voltage vs Total Gate Charge VasGATE TO SOURCE VOLTAGEV a 10 20 wo 40 QgTOTAL GATE CHARGEnC PG19000F Figure 8 Transient Thermal Resistance vs Time - 08 ~ & i t Duty Factor, D = e 2 Ocurves apply to train of heating pulses = Tc + Pu-Ztnyic ZhJ-C TRANSIENT THERMAL RESISTANCE C/W 10-1 19 101 102 103 10 tTWEms PC1001cF 2-6 (TT enn rumen mens ees Bu DE MB 3uR9b74 O0a7744 3 3469674 FAIRCHILD SEMICONDUCTOR 84D 27794 Do 2N6755/2N6756 7-39-11 Typical Electrical Characteristics Figure 9 Switching Test Circuit Vin PULSE GENERATOR Yoo RL Your | OUT , $ Ros cnaas0F Figure 10 Switching Waveforms OUTPUT, Vout INVERTED 50% 50% % 10% PULSE WIDTH WrO06OF INPUT, Vin 2-7