R08DS0048EJ0200 Rev.2.00 Page 1 of 20
Sep 27, 2013
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Preliminary Data Sheet
PS9308L, PS9308L2
2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
DESCRIPTION
The PS9308L and PS9308L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9308L and PS9308L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9308L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9308L and PS9308L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9308L is lead bending type (Gull-wing) for surface mounting.
The PS9308L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
• Long creepage distance (8 mm MIN.: PS9308L2)
• Half size of 8-pin DIP
• Peak output current (2.0 A MAX., 1.0 A MIN.)
• High speed switching (tPLH, tPHL = 0.25
μ
s MAX.)
• UVLO (Under Voltage Lock Out) protection with hysteresis
• High common mode transient immunity (CMH, CML = ±25 kV/
μ
s MIN.)
• Embossed tape product : PS9308L-E3, PS9308L2-E3 : 2 000 pcs/reel
• Pb-Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved (EN 60065, EN 60950)
• DIN EN60747-5-5 (VDE0884-5) approved (Option)
APPLICATIONS
• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• IH (Induction Heating)
R08DS0048EJ0200
Rev.2.00
Sep 27, 2013
1. Anode
2. NC
3. Cathode
4. V
EE
5. V
O
6. V
CC
PIN CONNECTION
(Top View)
64
132
5
SHIELD
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PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 2 of 20
Sep 27, 2013
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Surface Mount
0.25±0.15
9.7±0.3
3.7±0.25
0.8±0.25
0.2±0.15
7.62
3.5±0.2
6.8±0.25
4.58±0.3
(0.82)
PS9308L
0.4±0.1
0.25 M
1.27
Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount)
0.2±0.15
PS9308L2
11.5±0.3
6.8±0.25
4.58±0.3
0.25±0.15
0.75±0.25
(0.82)
3.7±0.25
3.5±0.2
7.62
0.4±0.1
0.25 M
1.27
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 3 of 20
Sep 27, 2013
PHOTOCOUPLER CONSTRUCTION
Parameter PS9308L PS9308L2
Air Distance (MIN.) 7 mm 8 mm
Outer Creepage Distance (MIN.) 7 mm 8 mm
Isolation Distance (MIN.) 0.4 mm 0.4 mm
MARKING EXAMPLE
Rank Code
Year Assembled
(Last 1 Digit)
Week Assembled
N231
R
9308
N231
No. 1 pin Mark
Assembly Lot
Type Number
Company Initial
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PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 4 of 20
Sep 27, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification
Packing Style Safety Standard
Approval
Application
Part Number*1
PS9308L PS9308L-AX Pb-Free 20 pcs (Tape 20 pcs cut) Standard PS9308L
PS9308L-E3 PS9308L-E3-AX (Ni/Pd/Au) Embossed Tape 2 000 products
pcs/reel (UL, CSA,
PS9308L2 PS9308L2-AX 20 pcs (Tape 20 pcs cut) SEMKO PS9308L2
PS9308L2-E3 PS9308L2-E3-AX Embossed Tape 2 000 approved)
pcs/reel
PS9308L-V PS9308L-V-AX 20 pcs (Tape 20 pcs cut) DIN EN 60747-5-5 PS9308L
PS9308L-V-E3 PS9308L-V-E3-AX Embossed Tape 2 000 (VDE 0884-5)
pcs/reel approved
(Option)
PS9308L2-V PS9308L2-V-AX 20 pcs (Tape 20 pcs cut) PS9308L2
PS9308L2-V-E3 PS9308L2-V-E3-AX Embossed Tape 2 000
pcs/reel
Note: *1. For the application of the Safety Standard, following part number should be used.
<R>
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 5 of 20
Sep 27, 2013
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current IF 25 mA
Peak Transient
Forward Current
(Pulse Width < 1
μ
s)
IF (TRAN) 1.0 A
Reverse Voltage VR 5 V
Detector High Level Peak
Output Current *1
IOH (PEAK) 2.0 A
Low Level Peak
Output Current *1
IOL (PEAK) 2.0 A
Supply Voltage (VCC−VEE) 0 to 35 V
Output Voltage VO 0 to VCC V
Power Dissipation *2 P
C 250 mW
Isolation Voltage *3 BV 5 000 Vr.m.s.
Total Power Dissipation *4 P
T 300 mW
Operating Frequency *5 f 50 kHz
Operating Ambient Temperature TA −40 to +110 °C
Storage Temperature Tstg −55 to +125 °C
Notes: *1. Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%
*2. Reduced to 4.8 mW/°C at TA = 70°C or more.
*3. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
*4. Reduced to 5.4 mW/°C at TA = 70°C or more.
*5. IOH (PEAK) ≤ 2.0 A (≤ 0.3
μ
s), IOL (PEAK) ≤ 2.0 A (≤ 0.3
μ
s)
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage (VCC−VEE) 15 30 V
Forward Current (ON) IF (ON) 7 10 16 mA
Forward Voltage (OFF) VF (OFF) −2 0.8 V
Operating Ambient Temperature TA −40 110 °C
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 6 of 20
Sep 27, 2013
ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit
Diode Forward Voltage VF I
F = 10 mA, TA = 25°C 1.2 1.56 1.8 V
Reverse Current IR V
R = 3 V, TA = 25°C 10
μ
A
Input Capacitance CIN f = 1 MHz, VF = 0 V, TA = 25°C 30 pF
Detector High Level Output Current IOH V
O = (VCC − 4 V) *2 1.0 1.5 A
V
O = (VCC − 15 V) *3 1.5
Low Level Output Current IOL V
O = (VEE + 2.5 V) *2 1.0 1.5 A
V
O = (VEE + 15 V) *3 1.5
High Level Output Voltage VOH I
O = −100 mA *4 V
CC − 3.0 VCC − 1.3 V
Low Level Output Voltage VOL I
O = 100 mA 0.1 0.5 V
High Level Supply Current ICCH I
F = 10 mA, VO = open 1.2 2.0 mA
Low Level Supply Current ICCL V
F = 0 to 0.8 V, VO = open 1.2 2.0 mA
UVLO Threshold VUVLO+ 10.8 12.3 13.4
V
UVLO- 9.5 11.0 12.5
UVLO Hysteresis UVLOHYS
Vo > 5V, IF = 10 mA
0.4 1.3
V
Coupled Threshold Input Current
(L → H)
IFLH I
O = 0 mA, VO > 5 V 1.8 5.0 mA
Threshold Input Voltage
(H → L)
VFHL I
O = 0 mA, VO < 5 V 0.8 V
Notes: *1. Typical values at TA = 25°C.
*2. Maximum pulse width = 50
μ
s, Maximum duty cycle = 0.5%.
*3. Maximum pulse width = 10
μ
s, Maximum duty cycle = 0.2%.
*4. VOH is measured with the DC load current in this testing. (Maximum pulse width = 2 ms, Maximum duty cycle
= 20%)
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 7 of 20
Sep 27, 2013
SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit
Propagation Delay Time (L → H) tPLH R
g = 10 Ω, Cg = 10 nF, 0.08 0.25
μ
s
Propagation Delay Time (H → L) tPHL f = 10 kHz, 0.10 0.25
μ
s
Pulse Width Distortion (PWD) |tPHL−tPLH| Duty Cycle = 50%, 0.02 0.1
μ
s
Propagation Delay Time
(Difference Between Any Two
Products)
tPHL−tPLH I
F = 10 mA −0.1 0.1
μ
s
Rise Time tr 50 ns
Fall Time tf 50 ns
Common Mode Transient
Immunity at High Level Output
|CMH| TA = 25°C, IF = 10 mA,
VCC = 30 V, VCM = 1.5 kV,
VO (MIN.) = 26 V
25 kV/
μ
s
Common Mode Transient
Immunity at Low Level Output
|CML| TA = 25°C, IF = 0 mA,
VCC = 30 V, VCM = 1.5 kV,
VO (MAX.) = 1 V
25 kV/
μ
s
Note: *1. Typical values at TA = 25°C.
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PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 8 of 20
Sep 27, 2013
TEST CIRCUIT
Fig. 1 IOH Test Circuit Fig. 2 IOL Test Circuit
Fig. 3 VOH Test Circuit Fig. 4 VOL Test Circuit
Fig. 6 IFLH Test CircuitFig. 5 UVLO Test Circuit
VCC = 15 to 30 V
2.5 V
1.0 F
μ
1
2
3
IOL
IF
VCC =
15 to 30 V
1.0 F
μ
VO > 5 V
IF = 10 mA
VCC
1.0 F
μ
VO > 5 V
IF =
7 to 16 mA
VCC =
15 to 30 V
1.0 F
μ
VOH
100 mA
VCC =
15 to 30 V
4 V
1.0 F
μ
IF =
7 to 16 mA
6
5
4
IOH
VCC = 15 to 30 V
1.0 F
μ
VOL
100 mA
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 9 of 20
Sep 27, 2013
V
CC
= 15 to 30 V
I
F
= 10 mA
10 kHz
50% DUTY
CYCLE
1.0 F
μ
VO
10 Ω
10 nF
t
PHL
t
PLH
I
F
V
OUT
90%
50%
10%
t
r
t
f
V
CC
= 30 V
V
CM
= 1.5 kV
1.0 F
μ
A
B
V
O
I
F
V
OH
26 V
1 V
V
OL
V
CM
0 V
V
O
(Switch A: I
F
= 10 mA)
V
O
(Switch B: I
F
= 0 mA)
Fig. 7 t
PLH
, t
PHL
, t
r
, t
f
Test Circuit and Wave Forms
Fig. 8 CMR Test Circuit and Wave Forms
Δ
t
=
δ
V
δ
t
V
CM
Δ
t
1
2
3
6
5
4
SHIELD
1
2
3
6
5
4
SHIELD
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 10 of 20
Sep 27, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Total Power Dissipation P
T
(mW)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
25 50 75 125
100 25 50 75 125
100
0
300
250
200
150
100
50
0
400
350
300
250
200
150
100
50
5
4
3
2
1
0
−40 −200 20406080100
−40 −200 20406080100
102 435
35
30
25
20
15
10
5
0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0.01
0.1
1
10
100
T
A
= +110°C
+100°C
+85°C
+50°C
+25°C
0°C
−40°C
0.0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
V
CC
= 30 V,
V
O
> 5 V,
I
O
= 0 mA
V
CC
= 30 V,
I
F
= 10 mA,
I
O
= −100 mA
V
CC
= 30 V
Ambient Temperature T
A
(°C)Ambient Temperature T
A
(°C)
Detector Power Dissipation P
C
(mW)
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Ambient Temperature T
A
(°C)
Threshold Input Current I
FLH
(mA)
Forward Current I
F
(mA)
Output Voltage V
O
(V)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
Ambient Temperature T
A
(°C)
High Level Output Voltage – Supply Voltage
V
OH
– V
CC
(V)
HIGH LEVEL OUTPUT VOLTAGE − SUPPLY
VOLTAGE vs. AMBIENT TEMPERATURE
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
Remark The graphs indicate nominal characteristics.
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PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 11 of 20
Sep 27, 2013
T
A
= 25°C
T
A
= 110°C
0.5
0.4
0.3
0.2
0.1
0
−40 −20
0.0 0.5 1.0 1.5 2.0
5.0
4.0
3.0
2.0
1.0
0.0
V
O
= V
CC
−4 V
V
O
= V
CC
−15 V
V
O
= V
EE
+15 V
V
O
= V
EE
+2.5 V
V
CC
= 30 V,
I
F
= 0 mA
V
CC
= 30 V,
I
F
= 10 mA
V
CC
= 30 V,
I
F
= 0 mA,
I
O
= 100mA
V
CC
= 30 V,
V
O
= OPEN
0 20 40 60 80 100
−40 −20 0 20 40 60 80 100
6
5
4
3
2
1
0
2.0
1.5
1.0
0.5
0.0
−40 −20 0 20 40 60 80 100
−40 −20 0 20 40 60 80 100
−2.0 −1.5 −1.0 −0.5 0.0
0
−1
−2
−3
−4
−5
−6
0.0
1.0
2.0
3.0
4.0
−5.0
V
CC
= 30 V,
I
F
= 0 mA
I
CCH
(I
F
= 10 mA)
I
CCL
(I
F
= 0 mA)
V
CC
= 30 V,
I
F
= 10 mA
T
A
= −40°C
T
A
= 110°C
Ambient Temperature T
A
(°C)
High Level Output Current I
OH
(A)
HIGH LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Low Level Output Current I
OL
(A)
LOW LEVEL OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Low Level Output Voltage V
OL
(V)
LOW LEVEL OUTPUT VOLTAGE vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
High Level Supply Current I
CCH
(mA)
Low Level Supply Current I
CCL
(mA)
SUPPLY CURRENT vs.
AMBIENT TEMPERATURE
High Level Output Current I
OH
(A)
High Level Output Voltage – Supply Voltage
V
OH
– V
CC
(V)
HIGH LEVEL OUTPUT VOLTAGE − SUPPLY
VOLTAGE vs. HIGH LEVEL OUTPUT CURRENT
Low Level Output Current I
OL
(A)
Low Level Output Voltage V
OL
(V)
LOW LEVEL OUTPUT VOLTAGE vs.
LOW LEVEL OUTPUT CURRENT
T
A
= 25°C
T
A
= −40°C
Remark The graphs indicate nominal characteristics.
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 12 of 20
Sep 27, 2013
15 20 3025
2.0
1.5
1.0
0.5
0.0
V
O
= OPEN
I
CCH
(I
F
= 10 mA)
I
CCL
(I
F
= 0 mA)
0−40 −20 20 40 60 80
250
200
150
100
50
0
250
200
150
100
50
0
250
200
150
100
50
0
250
200
150
100
50
0
250
200
150
100
50
0
100
PWD
t
PLH
t
PHL
7101316
V
CC
= 30 V, R
g
= 10 Ω,
C
g
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
I
F
= 10 mA, R
g
= 10 Ω,
C
g
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
PWD
t
PLH
t
PHL
15 20 25 30
PWD
t
PLH
t
PHL
01020
30 40 50
V
CC
= 30 V, I
F
= 10 mA,
R
g
= 10 Ω, f = 10 kHz,
Duty Cycle = 50%
PWD
t
PLH
t
PHL
0 1020304050
V
CC
= 30 V, I
F
= 10 mA,
C
g
= 10 nF, f = 10 kHz,
Duty Cycle = 50%
PWD
t
PLH
t
PHL
Supply Voltage V
CC
(V)
High Level Supply Current I
CCH
(mA)
Low Level Supply Current I
CCL
(mA)
SUPPLY CURRENT vs.
SUPPLY VOLTAGE
Propagation Delay Time t
PHL
, t
PLH
(ns),
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. AMBIENT TEMPERATURE
Pulse Width Distortion |t
PHL
−t
PLH
| (ns)
Ambient Temperature T
A
(°C)
Propagation Delay Time t
PHL
, t
PLH
(ns),
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. FORWARD CURRENT
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. SUPPLY VOLTAGE
Pulse Width Distortion |t
PHL
−t
PLH
| (ns)
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion |t
PHL
−t
PLH
| (ns)
Forward Current I
F
(mA) Supply Voltage V
CC
(V)
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. LOAD CAPACITANCE
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion |t
PHL
−t
PLH
| (ns)
Load Capacitance C
g
(nF)
PROPAGATION DELAY TIME, PULSE WIDTH
DISTORTION vs. LOAD RESISTANCE
Propagation Delay Time t
PHL
, t
PLH
(ns),
Pulse Width Distortion |t
PHL
−t
PLH
| (ns)
Load Resistance R
g
(Ω)
V
CC
= 30 V, I
F
= 10 mA,
R
g
= 10 Ω, C
g
= 10 nF,
f = 10 kHz, Duty cycle = 50%
Remark The graphs indicate nominal characteristics.
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 13 of 20
Sep 27, 2013
IF = 10 mA,
VEE = GND
Supply Voltage VCC – VEE (V)
POWER CONSUMPTION PER CYCLE vs.
LOAD RESISTANCE
0 5 10 15 20 0 20 3010 40 50
14
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
VUVLO−VUVLO+
(12.3 V)(11.0 V)
VUVLO+
UVLOHYS
Power Consumption Per Cycle ESW ( J)
μ
Qg = 1000 nC
OUTPUT VOLTAGE vs. SUPPLY VOLTAGE
Output Voltage VO (V)
Load Resistance Rg (Ω)
Qg = 500 nC
Qg = 100 nC
Remark The graphs indicate nominal characteristics.
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 14 of 20
Sep 27, 2013
TAPING SPECIFICATIONS (UNIT: mm)
PS9308L-E3
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
17.5±1.0
21.5±1.0
2.0±0.1
4.0±0.1
5.08±0.1
8.0±0.1
1.5
+0.1
–0
1.75±0.1
4.5 MAX.
7.5±0.1
10.2±0.1
16.0±0.3
0.35
1.5
+0.1
–0
4.05±0.1
Outline and Dimensions (Tape)
Tape Direction
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
<R>
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 15 of 20
Sep 27, 2013
PS9308L2-E3
330±2.0
100±1.0
2.0±0.5
13.0±0.2
R 1.0 21.0±0.8
2.0±0.5
25.5±1.0
29.5±1.0
2.0±0.1
4.0±0.1
5.08±0.1
8.0±0.1
2.0
+0.1
–0
1.5
+0.1
–0
4.05±0.1 1.75±0.1
4.5 MAX.
0.35
11.5±0.1
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
Tape Direction
Packing: 2 000 pcs/reel
24.0±0.3
12.0±0.1
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 16 of 20
Sep 27, 2013
RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm)
Part Number
PS9308L
PS9308L2
Lead Bending A
lead bending type (Gull-wing)
for long creepage distance (surface mount)
lead bending type (Gull-wing)
for surface mount 9.2
10.2
B
1.27
1.27
C
0.8
0.8
D
2.2
2.2
D
CB
A
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 17 of 20
Sep 27, 2013
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120 ± 30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
(4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 18 of 20
Sep 27, 2013
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 1.0
μ
F is used between VCC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5
μ
s or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/
μ
s or less.
5. Avoid storage at a high temperature and high humidity.
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 19 of 20
Sep 27, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 40/110/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.6 × UIORM., Pd < 5 pC
UIORM
Upr
1 130
1 808
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM., Pd < 5 pC
Upr 2 119 Vpeak
Highest permissible overvoltage UTR 8 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg –55 to +125 °C
Operating temperature range TA –40 to +110 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
<R>
PS9308L, PS9308L2 Chapter Title
R08DS0048EJ0200 Rev.2.00 Page 20 of 20
Sep 27, 2013
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History PS9308L, PS9308L2 Data Sheet
Description
Rev. Date Page Summary
1.00 Aug 31, 2011 − First edition issued
p.1 Modification of FEATURES
p.3 Modification of MARKING EXAMPLE
p.4 Modification of ORDERING INFORMATION
p.7 Modification of SWITCHING CHARACTERISTICS
pp.10 to 13 Addition of TYPICAL CHARACTERISTICS
pp.14 to 15 Modification of TAPING SPECIFICATIONS
2.00 Sep 27, 2013
p.19 Modification of SPECIFICATION OF VDE MARKS LICENCE DOCUMENT
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