POWER TRANSISTORS 2N6546 15A, 850V, Fast Switching, 2N6547 Silicon NPN Mesa FEATURES DESCRIPTION Collector-Base Voltage: up to 850V These high voltage glass passivated power @ Peak Collector Current: 30A transistors combine fast switching, low Rise Time: <0.72S saturation voltage and rugged E,/,, capability. Fall Time: <0.7uS @lc=10A They are designed for use in off-line power Key Parameters characterized at 100C supplies, high voltage inverters, switching regulators, ignition systems and deflection circuits. ABSOLUTE MAXIMUM RATINGS * 2N6548 2N6547 Collector-Base Voltage, Voge ccs: esses ttsisnsesnsenteeceernnenenssssssnseeeeenns cities veeseversetsnece coe. =850V Collector-Emitter Voltage, Veg isus) - es ves ves o 400V Emitter-Base Voltage, Vago ........-- eects cee OV Collector Current, Ic, continuous . 15A Cotlector Current, te peak .......... 30A Base Current, |, continuous ... 10A Emitter Current, |, continuous 25A Power Dissipation, 25C Case .... 175W Derating Factor oo. . Iw/c Operating and Storage Temper * JEDEC registered values. MECHANICAL SPECIFICATIONS NOTE: 2NG546 2N6547 10-3 Leads may be soldered to within Ye Of base provided temperature- time exposure is less than 260C for 10 seconds. ins. mm. A | .875 MAX 22.23 MAX 8 | .135 MAX 3.43 MAX C | 250-450 6.35-11.43 )S [po 312 Min 7.92 MIN. EC? Ty E 038-.043 DiA 0.97-1.09 DIA. A F | 188 MAX, RAD. | 4.78 MAX. RAD [] | G{ 1177-1197 29.90-30.40 iL H | 655-675 16.64-17.15 J] 205-225 .21-5.72 B K | 420-440 10.67-11.18 i | 525 MAX. RAO, | 13.34 MAX. RAD. Cc OD M| .151-.161 DIA. 3.84-4.09 DIA. ) 6-79: 134 aa UNITRODE ELECTRICAL SPECIFICATIONS (at 25C unless noted)* 2N6546 2N6547 2NG546 2N6547 Test Symbol MIN. MAX. MIN. MAX. Units Test Conditions D.C. Current Gain (Note 1) Ree 12 60 12 60 Vo = SOA, Vig = 2.0V D.C. Current Gain (Note 1) Hee 6 30 6 30 Ve == OA, Veg = 2.0V Collector Saturation Voltage _ _ (Note 1) Vee tsat} -- 1.5 _ 15 v lo = LOA, Ip = 2.0A Collector Saturation Voltage, _ _ To = 100C (Note 1) Voce (sot) _ 2.5 2.5 v lo = 10A, Ip = 2.0A Collector Saturation Voltage _ _ (Note 1) Voce fsat} - 5.0 _ 5.0 Vv ( = LSA, |, = 3.0A Base Saturation Voltage (Note 1) Voc (sat) _ 16 = 16 Vv lo = 10A, ty = 2.0A Base Saturation Voltage, =1 _ To = 100C (Note 1) Vor {set} _ 16 _ 16 v Ie == 10A, Ip = 2.0A Collector-Emitter Sustaining _ _ =01A 1 = Voltage (Note 2) Vego (sus) 300 400 V Io = 0.1A, Ig = 0 Collector-Emitter Sustaining L = 180uH, I, = 8.0A Voltage Vecex (sus} 350 _ 450 _ Veg == 5V, bg = 2.0A Te = 100C (Note 2) Veg Clamped to rated Veey jus) Collector-Emitter Sustaining L = 180gH, 1_ = 15A Voltage Vocex (sus) 200 _ 300 _ v Veg = OV, Ip = 3,0A Te. = 100C Vog Clamp to Vegg 100V Emitter-Base Cutoff Current leno 1 _ 1 mA {| Veg = 9V Colt Cutoff C ; 1 _ - A Vog = 650V, Vee = L5V : m olector Cutoff Current cEv _ _ _ 1 Vocg == 850V, Vap == ~ 1.5V Collector Cutoff Current, 1. = 4 _ _ mA Veg = 650V, Vee = 1.5V Tg = 100C ony = = 4 Veg = 850V, Vpz = 1.5V Collector Cutoff Current, |! _ 5 _ _ mA Veg = 850V, R = 508 2 CER To = 100C _ _ 5 Voz = 850V, R = 502 Output Capacitance, = 10V.f=1MH Common Base Cone 180 360 180 360 pF Vog = 10V, f= Z Gain-Bandwidth Product F, 6 24 6 24 MHz | Vc = 10V, Ie = 0.5A, f == 1 MHz Ig = 10A E d Breakd , c unel Secon reakcown Esly 2 - 2 | ml | Vee jon = 4.0V p L= 40H Resistive Switching Speeds Delay Time ty 0.05 = 0.05 lo = 10A Rise Time t, _ 07 07 18 Vog = 250V Storage Time t, _- 4.0 _ 40 ley = |g, = 2.0A Fall Time ty ~ Q7 07 Vee jot) = SV Inductive Switching Speeds io =10A Te = 100C 1, == 2.0A Storage Time : ~~ 5.0 5.0 5 Vee tort} = OV Fall Time ty 15 1.5 x Veg Clamp = rated Veex tus) . enh; le = 10A (pk) Inductive Switching Speeds Vog Clamp = rated Veex c= : Storage Time t, 2.0 typical 5 a = 20h oVvde Fall Time ty 0.09 typical B OC c= Therma! Resistance, Junction-to-Case RE xc ~ 10 ~ 10 ciw Notes: 1. Pulse width = 2508; duty cycle =1%. 2. Sustaining Voltage. Measured at a high current point where collector-emitter voltage is towest. Current pulse iength = 50uS; duty cycle = 1%. Voltage clamped at maximum collector-emitter voltage. * JEDEC registered values. UNITRODE CORPORATION * 5 FORBES ROAD LEXINGTON, MA 02173 + TEL. (617) 861-6540 WX (710) 326-6509 + TELEX 95-1064 135 PRINTED IN U.S.A. 2N6546 2N6547 Power Derating Forward Bias Safe Operating Area 40 20 3 = 10 3 = Fe be < a 40 o & g Dissipation D 2. z oO 20 Limited < a o 10 wl - g I k a se Zz a3 io o 4 e AT DESIRED OPERATING VOLTAGE, DERATE DISSIPA. oO x TION CURRENT LIMIT AND 1, , CURRENT LIMIT FROM | 3 25C SOAR CURVE 2 GASH LINES ON SOAR CURVES ARE EXTENSIONS OF 7 DISSIPATION FOR TEMPERATURE PURPOSES. a Te = 25C 0 40 80 120 160 200 _ EMP! RE 04 Te CASE TEMPERATURE ("C} 10 20 50 100 200 500 1000 Veg COLLECTOR VOLTAGE (V) Reverse Biased Safe Operating Area Saturation Voltages 40 BE (off; 20 eoorc 10 <= 5 = a 40 wi g 2 e 3 2.0 a > 1.0 z 8 5 Ez =| Fy a (4 = o rE | < o 2 o a 04 0.2 05 1 2 5 10 20 0 20 8 100200 500 1000 Ig COLLECTOR CURRENT (A) Veex tus) COLLECTOR VOLTAGE (V) DC Current Gain . Typical Inductive Load Switching Performance Ie Ty t, th. ty Amps C us ns ns z z 3 25 8 14 025 cL 100 1.10 18 .030 a 5 25 90 RT 025 & 100 1.20 16 030 3 10 25 1.20 05 .050 8 100 1.50 12 10 | x 0.2 0.5 1 2 5 10 20 1 COLLECTOR CURRENT (A) UNITRODE CORPORATION 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 136 PRINTED IN U.S.A. Resistive Turn-On Time 1000 2N6546 2N6547 Resistive Turn-Off Time 200 a 3 = w 100 g = ut r = 50 e 20 = =n 10 2 5 1 2 5 10 20 2 5 1 2 5 10 20 lg COLLECTOR CURRENT (A) Ig- COLLECTOR CURRENT (A) TEST CONDITIONS FOR DYNAMIC PERFORMANCE Veeoisus) Vocex sys) AND INDUCTIVE SWITCHING Es, RESISTIVE SWITCHING Drive Circuit n 150 1 ~ +13V s +10V oa~02 +4v i Ig. = Aww pe + ol = 200 pw j | 4 + 38.5V 500 0 2 golurt otk wh, ~-11V 9 1 Set +V,, to Obtain a Forced _ 2 8 _Tf in t Lt Ig = 10A = here = 5 and Adjust PW to PW < 100us 5 Attain Specified Peak t.. te<sns 5 PW Varied to Attain Duty Cycle < 3% 3 aN oe a aN t= Sons = to = 100mA f =: kHz i i Sut Cc Diodes 1N4933 PW Varied to Attain [, Duty Cycle < 2% - _ _ Lio 22 1804H _ _ Veg = 250V ai re = or Vee = 10V R.., = 0.052 Vesanp = Rated V.., Value Re" = ee Voc = 10V Ri = 250 BZ Reon = 0,78 Veg = 20V cot D1 = 1N5820 or Equiv. SS Vevey (Unclamped) = 500KH2 Vane (Unclamped) R, 60 orequiv INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS t, Adjusted to RESISTIVE TEST CIRCUIT le t, Ciamped Obtain I. ry t, Unciamped = t 5 roe ie, Ge gated | Tu = inputby JESU g | Vo rte Lo 2? pi = Vic & See Above For '"P alent Tt Meet v For t, ~ tee coe) qt L. & Detailed Conditions r ty Vv Vetamp _y * z ce scene | t Test Equipment R, Time let, Tektronix Scope 0.19 475 or Equivalent UNITRODE CORPORATION + 5 FORBES ROAD LEXINGTON, MA 02173 TEL. (617) 861-6540 TWX (710) 326-6509 TELEX 95-1064 137 PRINTED IN U.S.A.