LITE-ON SEMICONDUCTOR MBRF10150CT thru 10200CT REVERSE VOLTAGE - 150 to 200 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES A PIN 2 3 E 1 G Case : ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) J F MECHANICAL DATA I H MAX. 16.50 10.40 3.50 D E 9.00 2.90 9.30 3.60 F 13.46 1.15 2.40 0.75 14.22 DIM. D 94V-0 A B C ITO-220AB MIN. 15.50 10.0 3.00 M B K C Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification N H L PIN 1 PIN 2 PIN 3 G H I J K 1.70 2.70 1.00 0.45 0.70 3.00 3.30 L 4.36 4.77 M 2.48 2.80 2.80 2.50 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) VRRM VRMS VDC MBRF10150CT MBRF10200CT 150 105 150 200 140 200 UNIT V V V I(AV) 10 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 120 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us TJ =25 C TJ =125 C TJ =25 C TJ =125 C VF 0.92 0.75 1.00 0.85 V @TJ =25 C @TJ =125 C IR 8 2 uA mA R0JC 5.0 C/W CJ 120 pF Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 Dielectric Strengh from terminals to case, AC with t=1 minute, RH<30% Vdis 2000 V Maximum Forward Voltage (Note 1) TC =135 C IF=5A @ IF=5A @ IF=10A @ IF=10A @ Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Device mounted on 135 mm X 135 mm X 8 mm Alumium Plate Heatsink. 3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. REV. 1, Aug-2007, KTHC38 RATING AND CHARACTERISTIC CURVES MBRF10150CT thru 10200CT FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT , AMPERES 10.0 8.0 6.0 4.0 2.0 RESISTIVE OR INDUCTIVE LOAD 0.0 25 150 125 100 75 50 25 Single Half-Sine-Wave 0 50 75 100 125 150 1 175 2 5 INSTANTANEOUS FORWARD CURRENT , AMPERES 100 TJ =75 TJ =25 1 20 40 60 80 100 120 100 100 10 1.0 TJ =25 Pule Width 300us 2% Duty Cycle 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS REVERSE VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 10 f=1MHz TJ =25 1 0.1 50 FIG.4 - TYPICAL FORWARD CHARACTERISTICS TJ =125 CAPACITANCE , (PF) INSTANTANEOUS REVERSE CURRENT , (uA) FIG.3 - TYPICAL REVERSE CHARACTERISTICS 1000 0 20 NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE , 10 10 1 10 REVERSE VOLTAGE , VOLTS 100 1.0