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BAT42XV2-BAT43XV2 Schottky Barrier Diodes Features * * * * * * * Low Forward Voltage Drop Flat Lead, Surface Mount Device at 0.60mm Height Extremely Small Outline Plastic Package SOD523F Moisture Level Sensitivity 1 Pb-free Version and RoHS Compliant Matte Tin (Sn) Lead Finish Green Mold Compound Absolute Maximum Ratings * Symbol Cathode Anode ELECTRICAL SYMBOL SOD-523F Band Indicates Cathode BAT42XV2 Marking : 6B BAT43XV2 Marking : 7B TA=25C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 30 V Maximum DC Blocking Voltage 30 V IF(AV) Average Rectified Forward Current 200 mA IFSM Peak Forward Surge Current 4 A +125 C -65 to +125 C VRRM VR TJ Parameter Operating Junction Temperature Storage Temperature Range TSTG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA=25C unless otherwise noted Symbol PD RJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value Units 200 500 mW C/W * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics Symbol BVR TA=25C unless otherwise noted Parameter Test Condition Breakdown Voltage IR=100A IR Reverse Leakage Current VR=25V VF Forward Voltage TRR C BAT42XV2 IF=10mA IF=50mA BAT43XV2 IF=2mA IF=15mA BAT42XV2, BAT43XV2 IF=200mA Min. Typ. Max. 30 Units V 0.26 500 nA 0.40 0.65 0.33 0.45 1.0 V Reverse Recovery Time IF=IR=10mA RL=100 IRR=1mA 5 nS Capacitance VR=1V, f=1MHz 7 pF (c) 2009 Fairchild Semiconductor Corporation BAT42XV2-BAT43XV2 Rev. A1 www.fairchildsemi.com 1 BAT42XV2-BAT43XV2 -- Schottky Barrier Diodes January 2010 BAT42XV2-BAT43XV2 -- Schottky Barrier Diodes Typical Performance Characteristics Reverse Current vs Reverse Voltage 10 6 10 5 10 4 10 3 10 2 10 1 10 0 o Reverse Current, IR [nA] 125 C o 75 C o 25 C o 10 -25 C -1 0 5 10 15 20 25 30 35 40 Reverse Voltage, VR [V] Forward Voltage vs Forward Current Forward Current, IF [mA] 1000 100 o 125 C 10 o 75 C o 25 C 1 o -25 C 0.1 0 100 200 300 400 500 600 700 800 Forward Voltage, VF [mV] (c) 2009 Fairchild Semiconductor Corporation BAT42XV2-BAT43XV2 Rev. A1 www.fairchildsemi.com 2 BAT42XV2-BAT43XV2 -- Schottky Barrier Diodes Typical Performance Characteristics (Continued) Total Capacitance 20 o TA=25 C f=1MHz Capacitance, CT [pF] 15 10 5 0 0 5 10 15 20 25 30 35 40 Reverse Voltage, VR [V] Power Derating Curve Power Dissipation, PD [mW] 250 200 150 100 50 0 0 25 50 75 100 125 150 o Temperature, TA[ C] (c) 2009 Fairchild Semiconductor Corporation BAT42XV2-BAT43XV2 Rev. A1 www.fairchildsemi.com 3 0.90 0.70 A 0.8 B 1.30 1.10 2.0 0.50 0.25 TOP VIEW 0.35 0.25 0.10 M B A LAND PATTERN RECOMMENDATION 0.20 MAX 0.70 MAX 0.20 FRONT VIEW SEATING PLANE 1.70 1.50 SIDE VIEW NOTES: A. CONFORMS TO JEITA SC-79 B. ALL DIMENSIONS ARE IN MILLIMETERS C. DRAWING CONFORMS TO ASME Y14.5M-2009 D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR PROTRUSIONS. E. LAND PATTERN RECOMMENDATION IS BASED ON IPC7351A STANDARD SOD1609X65M F. DRAWING FILENAME: MKT-SOD523F1rev2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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