DE "7964142 SAMSUNG SEMICONDUCTOR. ING FAb4YL4e2 0005139 1 fe IRF440/441/442/443 FEATURES Low Roson) at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times . Rugged polysilicon gate cell structure Low input capacitance Extended safe operating area Improved high temperature reliability TO-3 package (High voltage) , PRODUCT SUMMARY Part Number Vos Ros(on) Ip IRF440 500V 0.859 8.0A IRF444 450V | 0.850 8.0A IRF442 500V 1.102 7.08 IRF443 450V -| 1.100 7.0A MAXIMUM RATINGS 28D 05139 DL. NECHANNEL POWER MOSFETS TO-3 Characteristic Symbol {RF440 IRF441 (RF442 IRF443 Unit Drain-Source Voltage (1) . Voss 500 450 500 450 Vdc Drain-Gate Voltage (Rag=1.OMM) (1) Voar 500 460 500 460 Vde Gate-Source Voltage Ves +20 Vdc Continuous Drain Current Te=26C , tb 8.0 8.0 7.0 7.0 Adc Continuous Drain Current Te=100C Ip 5.0 5.0 4.0 4.0 Adc | Drain CurrentPulsed (3) tos 32 32 28 28 Adc Gate CurrentPulsed lom 1.65 Adc Total Power Dissipation @ Tc=25C Pp 125 . Watts Derate above 25C 1.0 wietc rmcten Temperaiee Range Tw Tstg ~85 to 150 *e Maximum Lead Temp. for Soldering a 300 6 Purposes, 1/8 from case for 5 seconds Notes: (1) Ty=25C to 150C {2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature rt SAMSUNG SEMICONDUCTOR 138 D T3943 vw 7964142 SAMSUNG SEMICONDUCTOR INC ss 98D 05140 _ 796442 GOOSL4O 2 Sorte sain ~"" N-CHANNEL IRF440/441/442/443 POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Characteristic Symbol] Type |Min| Typ | Max |Units| ~ Test Conditions : : F440 . \- _ | > [pegap|s00] | = | v |ves=ov Drain-Source Breakdown BVpss Voltage , IRF441 450 Vi Ilp=250, . IRF443 ~ [7 p=250uA Gate Threshold Voltage Vestn | ALL |2.0] | 4.0 | V |Vps=Vas, lb>=250yA _|Gate-Source Leakage Forward] lass ALL | {| | 100] nA |Vas=20V Gate-Source Leakage Reverse] fcsg | ALL | | |-100] nA |Ves=20V Zero Gate Voltage loss | ALL || | 260| HA [Vos=Max. Rating, Vas=OV _ {Drain Current | | 1000] yA |Vps=Max. Ratingx0.8, Ves=OV, Tc=125C On-State Drain-So IREAat 80) ;|A : n-State Drain- urce Ipyon) Vos>Tojon)*Rosion) max. Vas= 10V Current (2) IRF442 710 A . IRF443] | 7 | . FAO! | o6)o85| 0 Static Drain-Source On-State Rosion) Ves=10V, Ip=4.0A |Resistance (2) IRF442 . . irraag} | 0] 11 | 8 _|Forward Transconductance (2)| gis ALL {4.0!6.5 | 8B |Vps>lpon)X Rosion} max., lpb=4.0A - Input Capacitance Ciss ALL | |1200/1600/ pF Output Capacitance Coss ALL | | 230] 350] pF |Ves=OV, Vps=25V, f=1.0MHz Reverse Transfer Capacitance] Crss ALL | ~ | 65 | 150] pF Turn-On Delay Time tajon) ALL | - |] 35 | ns Rise Time t, au |] 15 | ns Vpp=0.5BVogs, lp=4.0A, Zo=4.7 a ; (MOSFET switching times are essentially Turn-Off Delay Time tao) | ALL | | { 90 | NS lindependent of operating temperature.) Fall Time ty ALL | }| | 30} ns Total Gate Charge . (Gate-Source Plus Gate-Drain)| Go | ALL | 84} 60 | nC |Vas=10V, In=10A, Vos=0.8 Max. Rating (Gate charge is essentially independent of Gate-Source Charge Qgs ALL | | 6.0] | nc operating temperature.) Gate-Drain (Miller) Charge Qga ALL |/| 28 _ nc THERMAL RESISTANCE Junction to Case Rinuc ALL | -| 1.0 | K/W Case-to-Sink Rincs | ALL | | 0.1 | KW Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | }| 30 | K/W |Free Air Operation Notes: (1) T:- 25C to 150C (2) Pulse test: Pulse width<300Qus, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature DT-34-13 - ce SAMSUNG SEMICONDUCTOR 139 | | } | | alte | Utosae, 7964142 SAMSUNG SEMICONDUCTOR INC 74b4L42 OOOSL41 O pee an te teat OR NEL . IRF440/441/442/443 _SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS _ POWER MOSFETS Characteristic Symbol] Type |Min| Typ | Max |Units . Tegt Conditions s . IRFA40] Tl gg | a Continuous Source Current jg [IRF 441 Body Diode : i : _|{Body Diode) , IRF442)._ 7} _. | 7.0 | & |Modified MOSFET symbol B IRF443 . Showing the integral A. . IRF440) | 32 a_ {reverse P-N junction rectifier 6 S Pulse Source Current ism (RR A41 (Body Diode) (3) . IRF442 | oa la IRF443| : .. . erage -|T- 2.0 V {Tc=25C, Is=8.0A, Ves=OV Diode Forward Voltage (2)- Vsp IRF442 4 = = . InF4a3, | | 1-9] V |Tc=25C, ls=7.0A, Vas=OV Reverse Recovery Time- tr ALL | |1100) ns |TJ=150C, I-=8.0A, dig/dt=100A/ps Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature 24 20 a = wn a # 21 ws = a < 2 12 E E Zz 12 g 3 > o- 3 3 z z < c 4 6 6 - ~ 4 0 20 40 60 120 0 4 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE {VOLTS} Typical Output Characteristics Typical Transfer Characteristics Vos s0 g Fy # a # = 3 . = % s E g wy Ww Cc ec & [ong 3 3 z z << 4 gc < a oa 3 2 IRF 13 IRF 440 oO 2 4 oe & 10 10 #2 5 10 20 50 100 200) 66cO . Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area Vos, DRAIN-TO-SOURCE VOLTAGE {VOLTS) Typical Saturation Characteristics AH SAMSUNG SEMICONDUCTOR 140 _ 98D. 0514 1 DT-3443. 48 sero a Ooosu4e 4 IRF440/441 14421443 q 2 a 2 & 2 Ee ac rz uw? 25 Se mw ut Oo be a HG 3 22 aa 22 5 gz a gis, THANSCONDUCTACE (SIMENS) BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) : -40 o 40 ao = A CHANNEL POWER MOSFETS it Duty Factor. pate tar Per Unit Base=Fing 1 0 Deg C/W. Tas-Te= Pou Zac (H 1 {1. SQUARE WAVE PULSE DURATION (SECONDS) ; Maximum Effective Transient Thermal {mpedance Junction-to-Case Vs. Pulse Duration 4 ip, DRAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current 120 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature lon, REVERSE DRAIN CURRENT (AMPERES) . Rosion) DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1 2 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical SourceDrain Diode Forward Voltage -40, a 40 60 120 160 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature eb samsunc SEMICONDUCTOR 141 Ler eee ci a DE. PABYLY __ 7964142 SAMSUNG SEMICONDUCTOR. ING. _28D_ 05143 [ 2 consiua a ff IRF440/441/442/443 C, CAPACITANCE (pF) 10 20 30 40 50 - Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS} Typical Capacitance Vs. Drain to Source Voltage Vos=10V Os Aps(on), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 10 15 (20 25 a 45 fp, DRAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) o 20 409 6 80 1 120 140 160 Ta, AMBIENT TEMPERATURE (C) Power Vs. Temperature Derating Curve Vas, GATE-TO-SOQURCE VOLTAGE (VOLTS} Ip, DRAIN CURRENT (AMPERES) ~ N-CHANNEL POWER MOSFETS Vos 250, o 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 0 25 50 76 100 126 Ta, AMBIENT TEMPERATURE (C} Maximum Drain Current Vs. Case Temperature eS SAMSUNG SEMICONDUCTOR 142