VS-ST1280C..K Series
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Phase Control Thyristors
(Hockey-PUK Version), 2310 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case K-PUK (A-24)
• High profile hockey PUK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 2310 A
VDRM/VRRM 400 V, 600 V
VTM 1.44 V
IGT 100 mA
TJ-40 °C to +125 °C
Package K-PUK (A-24)
Circuit configuration Single SCR
K-PUK (A-24)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
2310 A
Ths 55 °C
IT(RMS)
4150 A
Ths 25 °C
ITSM
50 Hz 42 500 A
60 Hz 44 500
I2t50 Hz 9027 kA2s
60 Hz 8240
VDRM/VRRM 400 to 600 V
tqTypical 200 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST1280C..K 04 400 500 100
06 600 700
VS-ST1280C..K Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
Double side (single side) cooled
2310 (885) A
55 (85) °C
Maximum RMS on-state current IT(RMS) 25 °C heatsink temperature double side cooled 4150
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
42 500
t = 8.3 ms 44 500
t = 10 ms 100 % VRRM
reapplied
35 700
t = 8.3 ms 37 400
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
9027
kA2s
t = 8.3 ms 8241
t = 10 ms 100 % VRRM
reapplied
6383
t = 8.3 ms 5828
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 90 270 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.83 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.90
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.077 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.068
Maximum on-state voltage VTM Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.9
μs
Typical turn-off time tqITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
VS-ST1280C..K Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 16 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 1.4 -
VTJ = 25 °C 1.1 3.0
TJ = 125 °C 0.9 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to
heatsink RthJ-hs
DC operation single side cooled 0.042
K/W
DC operation double side cooled 0.021
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 % 24 500
(2500)
N
(kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet K-PUK (A-24)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
TJ = TJ maximum K/W
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
VS-ST1280C..K Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600
30˚
60˚ 90˚ 120˚ 180˚
Conduction Angle
ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000
30˚
60˚ 90˚ 120˚ 180˚
Conduction Angle
ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 1000 2000 3000 4000 5000
DC
30˚ 60˚ 90˚
120˚
180˚
Conduction Period
ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
400
800
1200
1600
2000
2400
2800
3200
3600
0 500 1000 1500 2000 2500 3000
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Angle
ST1280C..K Series
T = 125˚C
J
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 1000 2000 3000 4000 5000
DC
180˚
120˚
90˚
60˚
30˚
RMS Limit
Conduction Period
ST1280C..K Series
T = 125˚C
J
VS-ST1280C..K Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
15000
20000
25000
30000
35000
40000
110100
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST1280C..K Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
15000
20000
25000
30000
35000
40000
45000
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST1280C..K Series
Initial T = 125 ˚C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
100000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25˚C
J
T = 125˚C
J
ST1280C..K Series
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Steady State Value
R = 0.042 K/W
(Single Side Cooled)
R = 0.021 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST1280C..K Series
VS-ST1280C..K Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VG D
IG D
(
b
)
(
a
)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(
1
)
(2) (3)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
Rectan
g
ular
g
ate pulse
a
)
Recommended load line for
b
)
Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
Device: ST1280C..K Series
- Thyristor
1
- Vishay Semiconductors product
2
- Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code x 100 = VRRM (see Voltage Ratings table)
6
- K = PUK case K-PUK (A-24)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
none = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 128 0 C 06 K 1 -
Outline Dimensions
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K-PUK (A-24)
DIMENSIONS in millimeters (inches)
74.5 (2.9) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep
4.75 (0.2) NOM.
44 (1.73)
Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
Pin receptable
AMP. 60598-1
1 (0.04) MIN.
2 places 47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
67 (2.6) DIA. MAX.
C
G
ANote:
A = Anode
C = Cathode
G = Gate
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