VS-ST1280C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey-PUK Version), 2310 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case K-PUK (A-24) * High profile hockey PUK * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * DC motor controls K-PUK (A-24) * Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 2310 A VDRM/VRRM 400 V, 600 V VTM 1.44 V IGT 100 mA TJ -40 C to +125 C Package K-PUK (A-24) Circuit configuration Single SCR * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 4150 A 25 C 42 500 60 Hz 44 500 50 Hz 9027 60 Hz 8240 Typical TJ UNITS 2310 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 600 V 200 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1280C..K VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 500 06 600 700 100 Revision: 21-Sep-17 Document Number: 93718 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES A 55 (85) C 4150 No voltage reapplied 42 500 100 % VRRM reapplied 35 700 No voltage reapplied 44 500 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied t = 0.1 to 10 ms, no voltage reapplied 9027 8241 6383 90 270 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.83 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.90 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.077 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.068 Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 VTM IH Typical latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 5828 High level value of threshold voltage Maximum holding current A 37 400 Low level value of threshold voltage Maximum on-state voltage UNITS 2310 (885) 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 200 s BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of off-state voltage dV/dt Maximum peak reverse and off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/s TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 21-Sep-17 Document Number: 93718 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 IGD DC gate voltage not to trigger VGD V 5.0 TJ = -40 C 200 - TJ = 25 C 100 200 50 - TJ = 25 C TJ = 125 C DC gate current not to trigger A 20 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = TJ maximum, tp 5 ms TJ = -40 C VGT TYP. MAX. TJ = TJ maximum, tp 5 ms TJ = 125 C DC gate voltage required to trigger VALUES TEST CONDITIONS 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, 10 % Approximate weight Case style C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.003 0.003 0.002 0.002 120 0.004 0.004 0.004 0.004 90 0.005 0.005 0.005 0.005 60 0.007 0.007 0.007 0.007 30 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 21-Sep-17 Document Number: 93718 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series 130 Vishay Semiconductors ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 70 30 60 60 90 50 120 180 40 0 400 800 1200 1600 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 30 50 40 30 90 120 180 20 0 Average On-state current (A) 110 100 90 80 Conduction Period 70 60 30 50 60 90 40 120 30 180 DC 20 0 500 1000 1500 2000 2500 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 110 100 90 Conduction Angle 80 70 60 50 30 60 40 90 120 180 30 0 4000 5000 3200 180 120 90 60 30 2800 2400 2000 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics RMS Limit 1600 1200 Conduction Angle 800 ST1280C..K Series T J = 125C 400 0 0 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Fig. 2 - Current Ratings Characteristics 120 3000 3600 Average On-state current (A) 130 2000 Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 1000 DC Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 60 5000 4500 DC 180 120 90 60 30 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 ST1280C..K Series TJ = 125C 500 0 0 1000 2000 3000 4000 5000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 21-Sep-17 Document Number: 93718 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series 40000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125C 35000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 30000 25000 20000 ST1280C..K Series 15000 1 10 100 45000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 C 40000 No Voltage Reapplied Rated V RRMReapplied 35000 30000 25000 20000 ST1280C..K Series 15000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 100000 10000 TJ = 25C TJ = 125C 1000 ST1280C..K Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Transient Thermal Impedance Z thJ-hs Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) 0.01 (DC Operation) ST1280C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 21-Sep-17 Document Number: 93718 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (1) PGM = 16W, tp = 4ms (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (a ) (b ) 0.1 0.001 T j= -4 0 C VG D IG D Tj= 2 5 C 1 Tj= 12 5 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors ( 1 ) (2) (3) Frequency Limited by PG(AV) Device: ST1280C..K Series 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 128 0 C 06 K 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case K-PUK (A-24) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: none = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95081 Revision: 21-Sep-17 Document Number: 93718 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors K-PUK (A-24) DIMENSIONS in millimeters (inches) Creepage distance: 28.88 (1.137) minimum Strike distance: 17.99 (0.708) minimum 1 (0.04) MIN. 2 places 47.5 (1.87) DIA. MAX. 2 places C G Pin receptable AMP. 60598-1 27.5 (1.08) MAX. Note: A = Anode C = Cathode G = Gate A 67 (2.6) DIA. MAX. 20 5 74.5 (2.9) DIA. MAX. 4.75 (0.2) NOM. 44 (1.73) 2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-ST1280C04K0 VS-ST1280C06K0 VS-ST1280C04K1 VS-ST1280C06K0L VS-ST1280C06K1