IXTA96P085T IXTP96P085T IXTH96P085T TrenchPTM Power MOSFET VDSS ID25 = = RDS(on) P-Channel Enhancement Mode Avalanche Rated - 85V - 96A 13m TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings - 85 V VDGR TJ = 25C to 150C, RGS = 1M - 85 V VGSS Continuous 15 V VGSM Transient 25 V ID25 TC = 25C - 96 A IDM TC = 25C, Pulse Width Limited by TJM - 300 A IA EAS TC = 25C TC = 25C - 48 1 A J PD TC = 25C 298 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13/10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque Weight TO-263 TO-220 TO-247 (TO-220 & TO-247) G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A - 85 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 10 A - 750 A RDS(on) VGS = -10V, ID = 0.5 * ID25, Note 1 TJ = 125C z z V - 4.0 V 13 m z Applications z z z z z z (c) 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100025A(11/10) IXTA96P085T IXTP96P085T IXTH96P085T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = -10V, ID = 0.5 * ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 66 S 13.1 nF 1175 pF 460 pF 23 ns 34 ns 45 ns 22 ns 180 nC 52 nC 62 nC Resistive Switching Times VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 0.42 C/W RthJC RthCS TO-220 TO-247 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Pins: 1 - Gate 2 - Drain 3 - Source C/W C/W Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 48A, VGS = 0V, Note 1 trr QRM IRM IF = - 48A, -di/dt = -100A/s VR = - 43V, VGS = 0V Note TO-247 Outline 55 100 - 3.6 - 96 A - 394 A -1.3 V ns nC A TO-220 Outline 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 2. Extended Output Characteristics @ T J = 25C Fig. 1. Output Characteristics @ T J = 25C -350 -100 VGS = -10V - 9V - 8V - 7V -90 -80 - 8V -250 -60 ID - Amperes -70 ID - Amperes VGS = -10V - 9V -300 - 6V -50 -40 -30 - 7V -200 -150 - 6V -100 - 5V -20 -50 -10 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -2 -4 -6 -8 -10 -12 -14 -16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 48A vs. Junction Temperature -18 1.8 -100 VGS = -10V - 9V - 8V - 7V -80 VGS = -10V 1.6 R DS(on) - Normalized -90 ID - Amperes - 5V -70 -60 - 6V -50 -40 - 5V -30 -20 I D = - 96A 1.4 I D = - 48A 1.2 1.0 0.8 -10 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 48A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -110 1.8 -100 VGS = -10V -90 1.6 -80 ID - Amperes R DS(on) - Normalized TJ = 125C 1.4 1.2 -70 -60 -50 -40 -30 TJ = 25C 1.0 -20 -10 0.8 0 0 -50 -100 -150 -200 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved -250 -300 -350 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 8. Transconductance Fig. 7. Input Admittance -140 100 TJ = - 40C -120 80 25C -80 g f s - Siemens ID - Amperes -100 TJ = 125C 25C - 40C -60 125C 60 40 -40 20 -20 0 -2.5 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -20 -40 -60 VGS - Volts -100 -120 -140 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -10 -300 -9 -250 VDS = - 43V I D = - 48A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -80 ID - Amperes -150 TJ = 125C -100 -6 -5 -4 -3 TJ = 25C -2 -50 -1 0 -0.2 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 20 40 60 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000 100,000 f = 1 MHz 25s 10ms 100ms - 100 10,000 ID - Amperes Capacitance - PicoFarads Ciss 100s 1ms RDS(on) Limit Coss 1,000 DC - 10 TJ = 150C TC = 25C Single Pulse Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. -1 -1 - 10 VDS - Volts - 100 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 44 44 RG = 1, VGS = -10V RG = 1, VGS = -10V 40 t r - Nanoseconds t r - Nanoseconds VDS = - 43V 36 32 28 I D VDS = - 43V 40 = - 48A 36 TJ = 25C 32 28 24 I D = - 24A 24 20 16 TJ = 125C 20 25 35 45 55 65 75 85 95 105 115 125 -24 -26 -28 -30 -32 -34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 65 160 TJ = 125C, VGS = -10V 60 55 50 100 45 80 40 60 35 40 30 20 25 0 6 8 10 12 14 16 18 tf td(off) - - - - 60 I D = - 24A 23 50 I D = - 48A 21 45 20 40 19 25 20 35 45 55 58 54 TJ = 25C, 125C 21 50 20 46 19 -34 -36 105 115 35 125 -38 -40 -42 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved -44 -46 42 -48 tf td(off) - - - - 300 TJ = 125C, VGS = -10V VDS = - 43V 200 250 160 200 I D = - 24A, - 48A 120 150 80 100 40 50 0 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 20 t d(off) - Nanoseconds VDS = - 43V 23 -32 95 350 240 62 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - TJ = 125C, VGS = - 10V -30 85 280 t f - Nanoseconds tf -28 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 66 -26 65 TJ - Degrees Centigrade 25 -24 55 22 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 22 -48 65 VDS = - 43V 24 RG - Ohms 24 -46 RG = 1, VGS = -10V 20 4 -44 t d(off) - Nanoseconds I D = - 48A, - 24A 120 2 -42 70 25 t f - Nanoseconds td(on) - - - - t d(on) - Nanoseconds t r - Nanoseconds tr 0 -40 26 70 180 VDS = - 43V -38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 200 140 -36 ID - Amperes IXTA96P085T IXTP96P085T IXTH96P085T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_96P085T(A6)11-08-10-A