MM3Z4V3ST1G - ON Semiconductor

September, 2008 − Rev. 15

1Publication Order Number:

MM3Z2V4ST1/D

MM3Z2V4ST1 SERIES

Zener Voltage Regulators

200 mW SOD−323 Surface Mount

Tight Tolerance Portfolio

This series of Zener diodes is packaged in a SOD−323 surface

mount package that has a power dissipation of 200 mW. They are

designed to provide voltage regulation protection and are especially

attractive in situations where space is at a premium. They are well

suited for applications such as cellular phones, hand−held portables,

and high density PC boards.

Specification Features:

•Standard Zener Breakdown Voltage Range −

2.4 V to 33 V

•Steady State Power Rating of 200 mW

•Small Body Outline Dimensions:

0.067″ x 0.049″(1.7 mm x 1.25 mm)

•Low Body Height: 0.035″ (0.9 mm)

•Package Weight: 4.507 mg/unit

•ESD Rating of Class 3 (>16 kV) per Human Body Model

•Tight Tolerance VZ

•Pb−Free Packages are Available

Mechanical Characteristics:

CASE: Void-free, transfer-molded plastic

FINISH: All external surfaces are corrosion resistant

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

LEADS: Plated with Pb−Sn or Sn only (Pb−Free)

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

MOUNTING POSITION: Any

MAXIMUM RATINGS

Rating Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) @ TA = 25°C

Derate above 25°C

PD200

1.5

mW/°C

Thermal Resistance from

Junction−to−Ambient

RqJA 635 °C/W

Junction and Storage

Temperature Range

TJ, Tstg −65 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 Minimum Pad.

Device Package Shipping†

ORDERING INFORMATION

SOD−323

CASE 477

STYLE 1

Cathode

Anode

MM3ZxxxST1 SOD−323 3000/Tape & Reel

MARKING

DIAGRAM

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

DEVICE MARKING INFORMATION

XX = Specific Device Code

M = Date Code*

G= Pb−Free Package

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

MM3ZxxxST3 SOD−323 10,000/Tape & Reel

MM3ZxxxST1G SOD−323

(Pb−Free)

3000/Tape & Reel

MM3ZxxxST3G SOD−323

(Pb−Free)

10,000/Tape & Reel

XXMG

*Date Code orientation may vary

depending upon manufacturing location.

(Note: Microdot may be in either location)

MM3Z2V4ST1 SERIES

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted,

VF = 0.9 V Max. @ IF = 10 mA for all types)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

QVZMaximum Temperature Coefficient of VZ

CMax. Capacitance @VR = 0 and f = 1 MHz Zener Voltage Regulator

IZT

ELECTRICAL CHARACTERISTICS (VF = 0.9 Max @ IF = 10 mA for all types)

Device*

Device

Marking

Test

Current

Izt mA

Zener Voltage VZ ZZK IZ

= 0.5

mA W

Max

ZZT

IZ = IZT

@ 10%

Mod W

Max

IR @ VR

dVZ/dt (mV/k)

@ IZT1 = 5 mA C pF Max @

VR = 0

f = 1 MHz

Min Max mAV Min Max

MM3Z3V3ST1, G T5 5.0 3.32 3.53 1000 95 5.0 1.0 −3.5 0 450

MM3Z3V9ST1, G T7 5.0 3.89 4.16 1000 90 3.0 1.0 −3.5 −2.5 450

MM3Z4V3ST1, G T8 5.0 4.17 4.43 1000 90 3.0 1.0 −3.5 0 450

MM3Z4V7ST1, G T9 5.0 4.55 4.75 800 80 3.0 2.0 −3.5 0.2 260

MM3Z5V1ST1, G TA 5.0 4.98 5.2 500 60 2.0 2.0 −2.7 1.2 225

MM3Z5V6ST1, G TC 5.0 5.49 5.73 200 40 1.0 2.0 −2.0 2.5 200

MM3Z6V2ST1, G TE 5.0 6.06 6.33 100 10 3.0 4.0 0.4 3.7 185

MM3Z6V8ST1, G TF 5.0 6.65 6.93 160 15 2.0 4.0 1.2 4.5 155

MM3Z7V5ST1, G TG 5.0 7.28 7.6 160 15 1.0 5.0 2.5 5.3 140

MM3Z8V2ST1, G TH 5.0 8.02 8.36 160 15 0.7 5.0 3.2 6.2 135

MM3Z9V1ST1, G TK 5.0 8.85 9.23 160 15 0.5 6.0 3.8 7.0 130

MM3Z10VST1, G WB 5.0 9.80 10.20 160 15 0.5 6.0 4.5 8.0 130

MM3Z12VST1, G TN 5.0 11.74 12.24 80 25 0.1 8.0 6.0 10 130

MM3Z15VST1, G TP 5.0 14.34 14.98 80 40 0.1 11 8.8 12.7 130

MM3Z16VST1, G TU 5.0 15.85 16.51 80 40 0.05 11.2 10.4 14 105

MM3Z18VST1, G TW 5.0 17.56 18.35 80 45 0.05 12.6 12.4 16 100

MM3Z22VST1G WP 5.0 21.54 22.47 100 55 0.05 15.4 16.4 20 85

MM3Z27VST1G WQ 5.0 26.19 27.53 300 80 0.05 18.9 21.4 25.3 70

MM3Z33VST1G WR 5.0 32.15 33.79 300 80 0.05 23.2 27.4 33.4 70

*The “G’’ suffix indicates Pb−Free package available.

MM3Z2V4ST1 SERIES

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TYPICAL CHARACTERISTICS

VZ, NOMINAL ZENER VOLTAGE

Figure 1. Effect of Zener Voltage on

Zener Impedance

103.0

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

1.0

TJ = 25°C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

, FORWARD VOLTAGE (V)

Figure 2. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

1.0

150°C

75°C 25°C 0°C

C, CAPACITANCE (pF)

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 3. Typical Capacitance

1000

100

1.0 104.0

BIAS AT

50% OF VZ NOM

TA = 25°C

0 V BIAS 1 V BIAS

IR, LEAKAGE CURRENT ( A)μ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 4. Typical Leakage Current

1000

100

1.0

0.1

0.01

0.001

0.0001

0.00001 105.00

+150°C

+25°C

−55°C

VZ, ZENER VOLTAGE (V)

100

1.0

0.1

0.01 108.06.04.02.00

TA = 25°C

IZ, ZENER CURRENT (mA)

Figure 5. Zener Voltage versus Zener Current

(VZ Up to 9 V)

TEMPERATURE (°C)

250

100

POWER DISSIPATION (%)

50 75 100 125 150

Figure 6. Steady State Power Derating

MM3Z2V4ST1 SERIES

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PACKAGE DIMENSIONS

SOD−323

CASE 477−02

ISSUE G

1.60

0.063

0.63

0.025

ǒmm

inchesǓ

SCALE 10:1

0.83

0.033

2.85

0.112

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 1:

PIN 1. CATHODE

2. ANODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. LEAD THICKNESS SPECIFIED PER L/F DRAWING

WITH SOLDER PLATING.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

5. DIMENSION L IS MEASURED FROM END OF

RADIUS.

NOTE 3

12bE

CNOTE 5

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.90 1.00

A1 0.00 0.05 0.10

A3 0.15 REF

b0.25 0.32 0.4

C0.089 0.12 0.177

D1.60 1.70 1.80

E1.15 1.25 1.35

0.08

2.30 2.50 2.70

0.031 0.035 0.040

0.000 0.002 0.004

0.006 REF

0.010 0.012 0.016

0.003 0.005 0.007

0.062 0.066 0.070

0.045 0.049 0.053

0.003

0.090 0.098 0.105

MIN NOM MAX

INCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MM3Z2V4ST1/D

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