APTC90H12T1G - Microsemi Corp.

APTC90H12T1G

APTC90H12T1G – Rev 0 August, 2009

www.microsemi.com 1

–

5

79

1

4

NTC

11

810

12

3

6

Q1

Q2

5

Q4

Q3

2

Pins 3/4 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

VDSS Drain - Source Breakdown Voltage 900 V

Tc = 25°C 30

ID Continuous Drain Current Tc = 80°C 23

IDM Pulsed Drain current 75

A

VGS Gate - Source Voltage ±20 V

RDSon Drain - Source ON Resistance 120 mΩ

PD Maximum Power Dissipation Tc = 25°C 250 W

IAR Avalanche current (repetitive and non repetitive) 8.8 A

EAR Repetitive Avalanche Energy 2.9

EAS Single Pulse Avalanche Energy 1940 mJ

Application

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

•

- Ultra low RDSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

• Very low stray inductance

- Symmetrical design

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outstanding performance at high frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

• RoHS Compliant

Full - Bridge

Super Junction MOSFET

Power Module

VDSS = 900V

RDSon = 120mΩ max @ Tj = 25°C

ID = 30A @ Tc = 25°C

APTC90H12T1G

APTC90H12T1G – Rev 0 August, 2009

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

VGS = 0V,VDS = 900V Tj = 25°C 100

IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 900V Tj = 125°C 500 µA

RDS(on) Drain – Source on Resistance VGS = 10V, ID = 26A 100 120 mΩ

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 3mA 2.5 3 3.5 V

IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Ciss Input Capacitance 6.8

Coss Output Capacitance

VGS = 0V ; VDS = 100V

f = 1MHz 0.33 nF

Qg Total gate Charge 270

Qgs Gate – Source Charge 32

Qgd Gate – Drain Charge

VGS = 10V

VBus = 400V

ID = 26A 115

nC

Td(on) Turn-on Delay Time 70

Tr Rise Time 20

Td(off) Turn-off Delay Time 400

Tf Fall Time

Inductive Switching (125°C)

VGS = 10V

VBus = 600V

ID = 26A

RG = 7.5Ω 25

ns

Eon Turn-on Switching Energy 1.5

Eoff Turn-off Switching Energy

Inductive switching @ 25°C

VGS = 10V ; VBus = 600V

ID = 26A ; RG = 7.5Ω 0.75 mJ

Eon Turn-on Switching Energy 2.1

Eoff Turn-off Switching Energy

Inductive switching @ 125°C

VGS = 10V ; VBus = 600V

ID = 26A ; RG = 7.5Ω 0.85 mJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 30

IS Continuous Source current

(Body diode)

Tc = 80°C 23

A

VSD Diode Forward Voltage VGS = 0V, IS = - 26A 0.8 1.2 V

trr Reverse Recovery Time Tj = 25°C 920 ns

Qrr Reverse Recovery Charge

IS = - 26A

VR = 400V

diS/dt = 200A/µs Tj = 25°C 30 µC

APTC90H12T1G

APTC90H12T1G – Rev 0 August, 2009

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Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

RthJC Junction to Case Thermal Resistance 0.50 °C/W

VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V

TJ Operating junction temperature range -40 150

TSTG Storage Temperature Range -40 125

TC Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2.5 4.7 N.m

Wt Package Weight 80 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R25 Resistance @ 25°C 50 kΩ

∆R25/R25 5 %

B25/85 T

25 = 298.15 K 3952 K

∆B/B TC=100°C 4

%

⎥

⎦

⎤

⎢

⎣

⎡

⎟

⎠

⎞

⎜

⎝

⎛−

=

TT

B

R

RT11

exp

25

85/25

25

SP1 Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

RT: Thermistor value at T

APTC90H12T1G

APTC90H12T1G – Rev 0 August, 2009

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Typical performance Curve

0.9

0.7

0.5

0.3

0.1

0.05 Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.00001 0.0001 0.001 0.01 0.1 1 10

rectangular Pulse Duration (Seconds)

Thermal Impedance (°C/W)

Maximum Effective Transient Ther mal Impedance, Junctio n to Case vs Pulse Dur ation

5V

6V

0

40

80

120

0 5 10 15 20

V

DS

, Drain to So u rce Vol t age (V)

I

D

, Drain Current (A)

Low Voltage Output Characteristics

V

GS

=20, 8V

0

5

10

15

20

25

30

35

25 50 75 100 125 150

T

C

, Case Temp era tu r e (° C)

I

D

, DC Drain Current (A)

DC Drain Current vs Case Temperature

900

925

950

975

1000

25 50 75 100 125

T

J

, Junction Temperature (° C)

Breakdo wn Voltage vs Tem p erature

BV

DSS

, Dr ain to Source Br eakdown

Voltage

Maximum Safe Operating Area

10 ms

100 µs

0.1

1

10

100

1000

1 10 100 1000

V

DS

, Drain to Source Voltage (V)

I

D

, Dr ain Current (A)

limited b

y

R

DS

on

Single pulse

T

J

=150°C

T

C

=25°C

Ciss

Crss

Coss

1

10

100

1000

10000

100000

0 25 50 75 100 125 150 175 200

V

DS

, Drain to Source Voltage (V)

C, Capacitance (pF)

Capacitance vs Drain to So u rce Vol tage

0

2

4

6

8

10

0 50 100 150 200 250 300

Gate Charg e (nC)

V

GS

, Gate to Source Voltage (V)

Gate Charge vs Gate to Source V o ltage

V

DS

=400V

I

D

=26A

T

J

=25°C

APTC90H12T1G

APTC90H12T1G – Rev 0 August, 2009

www.microsemi.com 5

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5

Hard

switching

ZCS

ZVS

0

50

100

150

200

250

10 12.5 15 17.5 20 22.5 25

I

D

, Drain Current (A)

Frequency (kHz)

Operating Frequency vs Drain Current

V

DS

=600V

D=50%

R

G

=7.5Ω

T

J

=125°C

T

C

=75°C

Switching Energy vs Curren t

Eon

Eoff

0

1

2

3

4

5 10152025303540

I

D

, Drain Current (A)

Eon and Eoff (mJ)

V

DS

=600V

R

G

=7.5Ω

T

J

=125°C

L=100µH

ON resist ance vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

25 50 75 100 125 150

T

J

, Junction Temp erature (°C)

R

DS(on)

, Drain to Source ON resistance

(Normalized)

Switching E nergy vs Gate Resi st ance

Eon

Eoff

0

1

2

3

4

5 101520253035

Gate Resistance (Ohms)

Switching Energy (mJ)

V

DS

=600V

I

D

=26A

T

J

=125°C

L=100µH

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

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