VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A FEATURES 2 Anode * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS directive 2002/95/EC * Halogen-free according to IEC 61249-2-21 definition 1 Cathode D2PAK * Designed and qualified for industrial level 3 Gate APPLICATIONS * Input rectification (soft start) * Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VT at 6.5 A < 1.15 V ITSM 140 A VRRM 800 V DESCRIPTION The VS-10TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 m) copper 2.5 3.5 Aluminum IMS, RthCA = 15 C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 C/W 14.0 18.5 UNITS A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS Sinusoidal waveform IT(AV) VALUES UNITS 6.5 A IRMS 10 VRRM/VDRM 800 V ITSM 140 A 1.15 V 150 V/s 6.5 A, TJ = 25 C VT dV/dt dI/dt 100 A/s - 40 to 125 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 C mA 800 800 1.0 Range TJ VOLTAGE RATINGS PART NUMBER VS-10TTS08SPbF Document Number: 94562 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current IT(AV) IT(RMS) ITSM 10 ms sine pulse, rated VRRM applied, TJ = 125 C 120 10 ms sine pulse, no voltage reapplied, TJ = 125 C 140 A I2t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 C 1000 VTM 6.5 A, TJ = 25 C 1.15 V 17.3 m 0.85 V rt VT(TO) Maximum latching current 10 72 Maximum on-state voltage drop Typical holding current 6.5 TC = 112 C, 180 conduction half sine wave 100 Maximum I2t for fusing Maximum reverse and direct leakage current UNITS 10 ms sine pulse, rated VRRM applied, TJ = 125 C I2t Threshold voltage VALUES 10 ms sine pulse, no voltage reapplied, TJ = 125 C Maximum I2t for fusing On-state slope resistance TEST CONDITIONS IRM/IDM TJ = 125 C TJ = 25 C TJ = 125 C VR = Rated VRRM/VDRM A2s A2s 0.05 1.0 mA IH Anode supply = 6 V, resistive load, initial IT = 1 A IL Anode supply = 6 V, resistive load 50 TJ = 25 C 150 V/s 100 A/s VALUES UNITS Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt 30 TRIGGERING PARAMETER SYMBOL Maximum peak gate power TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Anode supply = 6 V, resistive load, TJ = - 65 C 20 Anode supply = 6 V, resistive load, TJ = 25 C 15 Anode supply = 6 V, resistive load, TJ = 125 C 10 Anode supply = 6 V, resistive load, TJ = - 65 C 1.2 Anode supply = 6 V, resistive load, TJ = 25 C 1 Anode supply = 6 V, resistive load, TJ = 125 C 0.7 TJ = 125 C, VDRM = Rated value W mA V 0.2 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 C TJ = 125 C For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 0.8 3 s 100 Document Number: 94562 Revision: 08-Jun-10 VS-10TTS08SPbF High Voltage Series Surface Mountable Phase Control SCR, 10 A Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance, junction to case RthJC UNITS - 40 to 125 For 10 s (1.6 mm from case) 240 DC operation 1.5 C C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 Approximate weight 2 g 0.07 oz. Case style D2PAK (SMD-220) Marking device 10TTS08S 125 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Angle 115 30 60 90 110 120 180 105 0 1 2 3 4 5 6 7 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 8 180 120 90 60 30 7 6 5 RMS Limit 4 3 Conduction Angle 2 10TTS08 TJ = 125C 1 0 0 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Period 115 30 60 110 90 120 180 DC 105 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Document Number: 94562 Revision: 08-Jun-10 2 3 4 5 6 7 Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) Fig. 1 - Current Rating Characteristics 125 1 Average On-state Current (A) Average On-state Current (A) 12 DC 180 120 90 60 30 10 8 6 RMS Limit 4 Conduction Period 10TTS08 TJ = 125C 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-10TTS08SPbF High Voltage Series Peak Half Sine Wave On-state Current (A) 130 Peak Half Sine Wave On-state Current (A) Surface Mountable Phase Control SCR, 10 A Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. 120 Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 110 100 90 80 70 10TTS08 60 1 10 100 150 140 130 120 110 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 100 90 80 70 10TTS08 60 50 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 10TTS08 100 TJ = 25C 10 TJ = 125C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (C/W) 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 10TTS08 0.01 0.0001 0.001 0. 01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94562 Revision: 08-Jun-10 VS-10TTS08SPbF High Voltage Series Surface Mountable Phase Control SCR, 10 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 T T S 08 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating, RMS value 3 - Circuit configuration: 4 - TRL PbF 8 9 T = Single thyristor Package: T = TO-220AC 5 - Type of silicon: S = Converter grade 6 - Voltage code x 100 = VRRM 7 - S = TO-220 D2PAK (SMD-220) version 8 - Tape and reel option: TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94562 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1