Photomicrosensor (Transmissive) EE-SX1035 99
Photomicrosensor (Transmissive)
EE-SX1035
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact model with a 5.2-mm-wide slot.
•PCB mounting type.
•RoHS Compliant.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Ordering Information
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.2
3 < mm ≤ 6 ±0.24
6 < mm ≤ 10 ±0.29
10 < mm ≤ 18 ±0.35
18 < mm ≤ 30 ±0.42
Cross section AA Cross section BB
Optical axis
Four, 0.5
Four, 0.25
1±0.1
1±0.1
1±0.1
(2.5)
6.3
Unless otherwise specified, the
tolerances are as shown below.
Item Symbol Rated value
Emitter Forward current IF50 mA (see note 1)
Pulse forward current IFP 1 A (see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO 5 V
Collector current IC20 mA
Collector
dissipation
PC100 mW
(see note 1)
Ambient
temperature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C (see note 3)
Description Model
Photomicrosensor (transmissive) EE-SX1035
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA