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DATA SH EET
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 12
DISCRETE SEMICONDUCTORS
BAS116
Low-leakage diode
db
ook, halfpage
M3D088
2003 Dec 12 2
NXP Semiconductors Product data sheet
Low-leakage diode BAS116
FEATURES
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 µs
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
APPLICATION
Low leakage curr ent applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage curr en t in a sm all SO T2 3 plastic SMD package.
PINNING
PIN DESCRIPTION
1anode
2not connected
3cathode
lum
ns 21
3
Top view
MAM106
2
n.c. 1
3
Fig.1 Simplified outline (SOT23) and sy mbol.
Marking code:
JVp = made in Hong Kong; JVt = made in Malaysia;
JVW = Made in China.
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAS116 plastic surfac e mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak rev erse voltage 85 V
VRcontinuous re ve rse volta ge 75 V
IFcontinuous for ward current see Fig.2; note 1 215 mA
IFRM repetitive peak forward current 500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs4 A
tp = 1 ms 1 A
tp = 1 s 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
Tstg storage tempe ra t u re 65 +150 °C
Tjjunction temperature 150 °C
2003 Dec 12 3
NXP Semiconductors Pr oduct data sheet
Low-leakage diode BAS116
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.3
IF = 1 mA 0.9 V
IF = 10 mA 1 V
IF = 50 mA 1 .1 V
IF = 150 mA 1. 25 V
IRreverse current see Fig.5
VR = 75 V 0.003 5nA
VR = 75 V; Tj = 150 °C 3 80 nA
Cddiode capacitance f = 1 MHz; VR = 0; see Fig.6 2pF
trr reverse recove ry time when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7 0.8 3µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point 330 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2003 Dec 12 4
NXP Semiconductors Pr oduct data sheet
Low-leakage diode BAS116
GRAPHICAL DATA
handbook, halfpage
0 200
300
0
100
200
MLB755
100 T ( C)
amb o
IF
(mA)
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature. Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
0 1.6
300
0
100
200
MLB752 - 1
0.8 1.20.4
IF
(mA)
V (V)
F
(1) (2) (3)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
101104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of p uls e duration.
Based on square wave currents; Tj = 25 °C prior to surge.
2003 Dec 12 5
NXP Semiconductors Pr oduct data sheet
Low-leakage diode BAS116
102
150 200
500
mlb754
100
10
1
101
102
103
IR
(nA)
Tj (°C)
(1)
(2)
(1) Maximum values.
(2) Typical values.
VR = 75 V.
Fig.5 Reverse current as a fun ction of junc tion
temperature. Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020155
2
0
1
MBG526
V
R
(V)
Cd
(pF)
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SIF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very time test circuit and waveforms.
(1) IR = 1 mA.
2003 Dec 12 6
NXP Semiconductors Pr oduct data sheet
Low-leakage diode BAS116
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2003 Dec 12 7
NXP Semiconductors Pr oduct data sheet
Low-leakage diode BAS116
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
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accepts no liability for inclusion and/or use of NXP
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict betw een information
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Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not fo rm p ar t o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/04/pp8 Date of release: 2003 Dec 12 Document orde r number: 9397 750 12391