©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
BD676A/678A/680A/682
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitt er Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 4 A
ICP *Collector Current (Pulse) - 6 A
IB Base Current - 100 mA
PC Collector Dissipation (TC=25°C) 14 W
Rθja Thermal Resistance (Junction to Ambient) 88 °C/W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Ty p. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
IC = - 50mA, IB = 0 - 45
- 60
- 80
- 100
ICBO Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
VCB = - 45V, IE = 0
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, VBE = 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
VCE = - 45V, VBE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VCE = - 100V, VBE = 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2 m A
hFE * DC Current Gain : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1.5A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682 IC = - 2A, IB = - 40mA
IC = - 1.5A, IB = - 3 0mA
- 2.8
- 2.5 V
V
VBE(on) * Base-Emitter On Voltage : BD676A/678A/680A
: BD682 VCE = - 3V, IC = - 2A
VCE = - 3V, IC = - 1.5A - 2.5
- 2.5 V
V
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2002 Fairchild Semiconductor Corporation
BD676A/678A/680A/682
Rev. B, September 2002
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.1 -1 -10
100
1000
10000
VCE = -3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 IC = 250 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0 VCE = 3V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
-0.1
-1
BD678A
10µs
IC(max). Puls ed
BD682
BD680A
BD676A
100µs
1ms
10ms
DC
IC(max). Continuous
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
4
8
12
16
20
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
BD676A/678A/680A/682
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2002 Fairchild Semiconductor Corporation Rev. I1
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