XTEAWT-00-8C1-Q5 - CREE - Datasheet.Live

REVISIONS

LTR DESCRIPTION DATE (YR-MO-DA) APPROVED

A Radiation requirements added to drawing. Update to reflect latest changes in

format and requirements. Editorial changes throughout. --les

04-01-29 Raymond Monnin

REV

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OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13

PMIC N/A PREPARED BY

Thanh V. Nguyen

DEFENSE SUPPLY CENTER COLUMBUS

STANDARD

MICROCIRCUIT

DRAWING

CHECKED BY

Thanh V. Nguyen

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

APPROVED BY

Monica L. Poelking

MICROCIRCUIT, DIGITAL, ECL,

HEX ECL-TO-TTL TRANSLATOR,

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

DRAWING APPROVAL DATE

93-01-22

MONOLITHIC SILICON

AMSC N/A

REVISION LEVEL

SIZE

CAGE CODE

67268

5962-91531

SHEET

1 OF

DSCC FORM 2233

APR 97 5962-E068-04

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited..

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1. SCOPE

1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)

and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or

Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

1.2 PIN. The PIN shall be as shown in the following example:

5962 F 91531 01 M X A

Federal

stock class

designator

RHA

designator

(see 1.2.1)

Device

type

(see 1.2.2)

Device

class

designator

Case

outline

(see 1.2.4)

Lead

finish

(see 1.2.5)

\ / (see 1.2.3)

Drawing number

1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are

marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A

specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

1.2.2 Device type. The device type identifies the circuit function as follows:

Device type Generic number Circuit function

01 100325 Hex ECL-to-TTL translator

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed

below.

Device class Device requirements documentation

M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-

JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A

Q or V Certification and qualification to MIL-PRF-38535

1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

X GDIP5-T24 or CDIP6-T24 24 dual-in-line

Y See figure 1 24 quad-flat

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

appendix A for device class M.

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1.3 Absolute maximum ratings. 1/

Supply voltage range (VEE) .............................................. -7.0 V dc to +0.5 V dc

Positive supply voltage range (VTTL) .............................. -0.5 V dc to +6.0 V dc

Dc input voltage range (VIN) ............................................ VEE to +0.5 V dc

Dc input current range (IIN) ............................................. -30 mA to +5.0 mA

Storage temperature range.............................................. -65°C to +150°C

Maximum dc output current (IOUT) ................................... -50 mA

Maximum power dissipation (PD) 2/ ................................. 805 mW

Lead temperature (soldering, 10 seconds) ..................... +300°C

Junction temperature (TJ) ................................................ +175°C

Thermal resistance, junction-to-case (θJC):

Case X ....................................................................... See MIL-STD-1835

Case Y ....................................................................... 28°C/W

1.4 Recommended operating conditions.

Negative supply voltage range (VEE) ......................................... -5.7 V dc minimim to –4.2 V dc maximum

Positive supply voltage range (VTTL) ......................................... +4.5 Vdc minimum to +5.5 Vdc Maximum

High level input voltage range (VIH) .......................................... -1.165 V dc minimum to –0.870 V dc maximum

Low level output voltage (VIL) ................................................... -1.830 V dc minimum to –1.475 V dc maximum

Ambient operating temperature range (TC) ............................... -55°C to +125°C

1.5 Radiation features.

Maximum total dose available (dose rate = 50 – 300 rads(Si)/s)........... 300 Krads (Si)

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the

issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 -- Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883 - Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

________

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Maximum power dissipation is defined as VCC X ICC, and must withstand the added PD due to short circuit test e.g., IOS.

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HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of

this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in

MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.

3.2.3 Truth table. The truth table shall be as specified on figure 3.

3.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4.

3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document

revision level control and shall be made available to the preparing and acquiring activity upon request.

3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking

for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

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TABLE I. Electrical performance characteristics.

Test

Symbol

Conditions

-55°C ≤ TC ≤ +125°C 1/

unless otherwise specified

Group A

subgroups

Device

type

Limits

Unit

Min Max

High level output voltage VOH V

TTL = 4.5 V, IOH = -2 mA 1, 2 All 2.5 V

IL = -1.83 V, 3 2.4

Low level output voltage VOL V

IH = -0.87 V, IOL = 20 mA 1, 2, 3 All 0.5 V

EE = -5.7 V, -4.2 V

Output reference voltage VBB V

TTL = 5.0 V, VEE = -4.2 V,

IVBB = -3.0 µA

1, 2, 3 All -1.260 V

TTL = 5.0 V, VEE = -5.7 V,

IVBB = -2.1 mA

1, 2 -1.380

TTL = 5.0 V, VEE = -5.7 V,

IVBB = -3.0 mA

3 -1.396

Input voltage differential VDIFF V

EE = -4.2 V, -5.7 V, 1, 2, 3 All 0.15 V

Common mode voltage VCM V

TTL =4.5 V 1, 2, 3 All -2.0 -0.5 V

High level input current IIH V

EE = -5.7 V, VTTL = 5.0 V, 1, 2 All 350 µA

IN = -0.87 V 3 500

Low level input current IIL V

EE = -4.2 V, VTTL = 5.0 V, 1, 2, 3 All 0.5 µA

IN = -1.83 V

Negative power supply IEE V

EE = -5.7 V, -4.2 V, 1, 2, 3 All -35 -12 mA

drain current VTTL = 5.0 V

Positive power supply ITTL V

EE = -4.5 V, VTTL = 5.5 V, 1, 2, 3 All 65 mA

drain current VIN = VBB

Output short circuit

current

IOS V

EE = -4.5 V, VTTL = 5.5 V,

VOUT = 0.0 V

1, 2, 3 All -150 -60 mA

Functional tests VEE = -5.7 V, -4.2 V, VIH = -1.023 V,

VIL = -1.642 V, VTTL = 4.5 V, 5.5 V,

See 4.4.1c.

7, 8 All

Propagation delay time tPLH 9 All 1.6 4.7 ns

data to output, Dn to Qn tPLH See figure 4 10 1.7 5.7

11 1.5 5.0

Transition time, tTLH 9 All 0.5 2.5 ns

output 2/ tTHL 10 0.5 2.5

11 0.5 3.0

1/ Pre and Post-irradiation values are identical unless otherwise specified in table I. When performing post-irradiation

electrical measurements for any RHA level, TA = +25°C.

2/ This parameter is provided as design information only (not tested but guaranteed).

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3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the

option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 31 (see MIL-PRF-38535, appendix A).

4. QUALITY ASSURANCE PROVISIONS

4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with

MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan

shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in

accordance with MIL-PRF-38535, appendix A.

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Case Y

Dimension Millimeters Inches Notes

Min Max Min Max

A 2.16 .085

b 0.41 0.46 .015 .019

c 0.10 0.15 .004 .007

D 22.10 28.45 .870 1.120

D1 9.40 10.16 .370 .400 4

E 22.10 28.45 .870 1.120

E1 9.40 10.16 .370 .400 4

e 1.14 1.40 .045 .055

L 6.35 9.14 .250 .360

Q 0.89 1.27 .035 .050 5

S 1.91 .075

NOTES:

1. The preferred unit of measurement is millimeters. However, this item was designed using inch-pound units of

measurement. In case problems involving conflicts between the metric and inch-pound units, the inch-pound

units shall rule.

2. Lead number 1 is identified by a tab located on the lead.

3. Lead numbers are shown for reference only and do not appear on the package.

4. Dimensions D1 and E1 allow glass meniscus.

5. Dimension Q shall be measured at the point of exit of the lead from the body.

FIGURE 1. Case outline.

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Device

type

01 01

Case

outlines

X Y

Terminal

number

Terminal symbol Terminal symbol

1 Q5 D4

2 Q4 D

3 Q3 D5

4 VTTL Q5

5 VTTL Q4

6 VCC Q

7 VCC V

TTL

8 Q2 V

TTL

9 Q1 V

10 Q0 V

11 D0 Q2

12 D0 Q

13 D1 Q0

14 D1 D0

15 D2 D0

16 D2 D1

17 VBB D1

18 VEE D2

19 D3 D

20 D3 VBB

21 D4 V

22 D4 D3

23 D5 D3

24 D5 D4

FIGURE 2. Terminal connections.

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INPUTS OUTPUTS

Dn Dn

L H L

H L H

L L L

H H L

Open Open L

VEE V

EE L

L VBB L

H VBB H

VBB L H

VBB H L

H = High voltage level.

L = Low voltage level.

FIGURE 3. Truth tables.

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NOTES:

1. VCC = 0.0 V, VEE = -4.5 V, VTTL = +5.0 V.

2. L1 and L2 equal length 50Ω impedance lines.

3. RT = 50Ω terminator internal to scope.

4. Decoupling 0.1 µF from GND to VCC, VEE, and VTTL.

5. All unused outputs are loaded with 500Ω to GND.

6. CL = fixture and stray capacitance = 50 pF.

FIGURE 4. Test circuit and switching waveforms.

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4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on

all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance

with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

4.2.1 Additional criteria for device class M.

a. Burn-in test, method 1015 of MIL-STD-883.

(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision

level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

test method 1015.

(2) TA = +125°C, minimum.

b. Interim and final electrical test parameters shall be as specified in table II herein.

4.2.2 Additional criteria for device classes Q and V.

a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under

document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test

method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified in table II herein.

c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in

accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups

A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with

MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified. Quality conformance inspection for device

class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for

device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections

(see 4.4.1 through 4.4.4).

4.4.1 Group A inspection.

a. Tests shall be as specified in table II herein.

b. Subgroups 4, 5, and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.

c. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V,

subgroups 7 and 8 shall include verifying the functionality of the device.

4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.

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TABLE II. Electrical test requirements.

Test requirements Subgroups

(in accordance with MIL-

STD-883, method 5005,

table I)

Subgroups

(in accordance with

MIL-PRF-38535, table III)

Device

class M

Device

class Q

Device

class V

Interim electrical

parameters (see 4.2)

1 1 1

Final electrical

parameters (see 4.2)

1/ 1, 2, 3, 7, 8, 9 1/ 1, 2, 3, 7, 8,

9, 10, 11

2/ 1, 2, 3, 7, 8,

9, 10, 11

Group A test

requirements (see 4.4)

1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9,

10, 11

1, 2, 3, 7, 8, 9,

10, 11

Group C end-point electrical

parameters (see 4.4)

1, 2, 3, 7, 8 1, 2, 3, 7, 8 1, 2, 3, 7, 8,

Group D end-point electrical

parameters (see 4.4)

1, 2, 3, 7, 8 1, 2, 3, 7, 8 1, 2, 3, 7, 8

Group E end-point electrical

parameters (see 4.4)

1, 7, 9 1, 7, 9 1, 7, 9

1/ PDA applies to subgroup 1.

2/ PDA applies to subgroups 1 and 7.

4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:

a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level

control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the

inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005

of MIL-STD-883.

b. TA = +125°C, minimum.

c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.

4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,

or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The

test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the

inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-

STD-883.

4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.

4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured

(see 3.5 herein).

a. End-point electrical parameters shall be as specified in table II herein.

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b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as

specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to

radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device

classes must meet the post-irradiation end-point electrical parameter limits as defined in table I at

A = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.

4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883

method 1019, condition A and as specified herein.

5. PACKAGING

5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes

Q and V or MIL-PRF-38535, appendix A for device class M.

6. NOTES

6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications

(original equipment), design applications, and logistics purposes.

6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-

prepared specification or drawing.

6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for

the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application

requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list

will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices

(FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.

6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone (614)

692-0547.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535 and MIL-HDBK-1331.

6.6 Sources of supply.

6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.

The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to

this drawing.

6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.

The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been

submitted to and accepted by DSCC-VA.

STANDARD MICROCIRCUIT DRAWING BULLETIN

DATE: 04-01-29x

Approved sources of supply for SMD 5962-91531 are listed below for immediate acquisition information only and shall

be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised

to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate

of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated

revision of MIL-HDBK-103 and QML-38535.

Standard

microcircuit drawing

PIN 1/

Vendor

CAGE

number

Vendor

similar

PIN 2/

5962-9153101MXA

27014 100325DMQB

5962-9153101MYA

27014 100325FMQB

5962-9153101VXA

27014 100325J-QMLV

5962-9153101VYA

27014 100325W-QMLV

5962F9153101VYA

27014 100325WFQMLV

1/ The lead finish shown for each PIN representing

a hermetic package is the most readily available

from the manufacturer listed for that part. If the

desired lead finish is not listed contact the vendor

to determine its availability.

2/ Caution. Do not use this number for item

acquisition. Items acquired to this number may not

satisfy the performance requirements of this drawing.

Vendor CAGE Vendor name

number and address

27014 National Semiconductor

2900 Semiconductor Drive

P.O. Box 58090

Santa Clara, CA 95052-8090

The information contained herein is disseminated for convenience only and the

Government assumes no liability whatsoever for any inaccuracies in the

information bulletin.