Semiconductor Group 1 02.95
1550 nm Laser in Coaxial Package with SM-Pigtail,
Low Power STL 81004X
STL 81005X
•Designed for application in fiber-optic networks
•Laser diode with Multi-Quantum Well structure
•Suitable for bit rates up to 1 Gbit/s
•Ternary photodiode at rear mirror for monitoring and
control of radiant power
•Hermetically sealed subcomponent, similar to TO 18
•SM Pigtail with optional flange
Type Ordering Code Connector/Flange
STL 81004H Q62702-Pxxxx FC / without flange
STL 81004A Q62702-Pxxxx DIN / without flange
STL 81005H Q62702-Pxxxx FC / with flange
STL 81005A Q62702-Pxxxx DIN / with flange
Component with other connector types on request.
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter Symbol
Values
Unit
Module
Operating temperature range at case TC−
40
…
+ 85
°C
Storage temperature range Tstg −
40
…
+ 85
°C
Soldering temperature
tmax = 10 s, 2 mm distance from bottom edge of
case
TS
260
°C
STL 81004X
STL 81005X
Semiconductor Group 2
Maximum Ratings (cont’d)
Parameter Symbol
Values
Unit
Laser Diode
Direct forward current IF max
120
mA
Radiant power CW Φe
1
mW
Reverse voltage VR max
2
V
Monitor Diode
Reverse voltage VR max
10
V
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter Symbol
Values
Unit
Laser Diode
Optical output power Φe
> 0.4
mW
Emission wavelength center of range
Φe = 0.2 mW λ
1510
…
1590
nm
Spectral bandwidth Φe = 0.2 mW (RMS) ∆
λ
< 5
nm
Threshold current (− 40 … + 85 °C) Ith
8
…
60
mA
Forward voltage Φe = 0.2 mW VF
< 1.5
V
Radiant power at threshold Φeth
< 10
µW
Slope efficiency η
8
…
60
mW/A
Differential series resistance rS
< 8
Ω
Rise time/fall time tR, tF
< 1
ns
Monitor Diode
Dark current, VR = 5 V, Φe = 0 IR
< 500
nA
Photocurrent, Φe = 0.2 mW IP
100
…
1000
µA
STL 81004X
STL 81005X
Semiconductor Group 3
Laser Diode
Radiant Power in Singlemode Fiber Relative Radiant Power
Φe = f(λ)
0
100
200
300
400
0 10203040
Forward Current in mA
Optical Power in MikroW
0
10
20
30
40
50
60
70
80
90
100
1546 1548 1550 1552 1554
Wavelength in nm
Relative Optical Power
Laser Forward Current
IF = f(VF)Monitor Diode Dark Current IR = f(TA)
Φ
p
ort = 0, VR = 5 V
0
10
20
30
40
50
60
70
80
90
100
0 0.4 0.8 1.2 1.6
Forward Voltage i n V
Forward Current in mA
0.01
0.1
1
10
100
1000
-50 0 50 100
Temperature in ° C
Dark Current in nA
STL 81004X
STL 81005X
Semiconductor Group 4
Package Outlines (Dimensions in mm)
STL 81004X
STL 81005X
