IRFQ110
Document Number ****
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VDS Drain Source Voltage
ID Continuous Drain Current
ID @Tc= 100°C Continuous Drain Current
IDM Pulsed Drain Current *
VGS Gate Source Voltage
PDMaximum Power Dissipation
RθJC Thermal Resistance Junction to Case
TJ,Tstg Operating and Storage Temperature Range
100V
1A
0.6A
4A
±20V
4.5W
27.78°C/W
-55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches) QUAD N–CHANNEL
ENHANCEMENT MOSFETS
ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
APPLICATIONS
• FAST SWITCHING
• MOTOR CONTROLS
• POWER SUPPLIES
LCC28 Ceramic Package
1
0.64(.025)
REF
2.16(.085)
PIN 1
INDEX
7.62(.300)
1.27(.050)
REF
7.62(.300)
1.91(.075)
REF
1.27(.050)
1.91(.075)
1.60(.063)
18
11.44(.450)
SQ
28
1
25 19
511
12
Pin 1 - Gate 1
Pin 4 - N/C
Pin 7 - N/C
Pin 10 - Source 2
Pin 13 - Drain 2
Pin 16 - Source 3
Pin 19 - Drain 3
Pin 22 - Gate 4
Pin 25 - N/C
Pin 2 - Source 1
Pin 5 - Drain 1
Pin 8 - Gate 2
Pin 11 - N/C
Pin 14 - N/C
Pin 17 - Source 3
Pin 20 - Drain 3
Pin 23 - Source 4
Pin 26 - Drain 4
Pin 28 - N/C
Pin 3 - Source 1
Pin 6 - Drain 1
Pin 9 - Source 2
Pin 12 - Drain 2
Pin 15 - Gate 3
Pin 18 - N/C
Pin 21 - N/C
Pin 24 - Source 4
Pin 27 - Drain 4
FEATURES
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• LIGHTWEIGHT
• MILITARY SCREENING LEVEL OPTIONS
• SPACE QUALITY LEVELS OPTIONS
Parameter Test Conditions Min. Typ. Max. Unit
V
nA
µA
Ω
S ( )
pF
nC
ns
A
V
ns
µC
IRFQ110
Document Number ****
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
100
2.0 4.0
100
-100
25
250
0.70
0.80
0.86 180
82
15 15
7.5
7.5
20
25
40
40
1.0
4.0
1.5
200
0.83
VGS = 0 ID= 1mA
VDS = VGS ID= 250µA
VGS = 20V
VGS = -20V
VDS = 80V. VGS =0
TC= 125°C
VGS = 10V ID= 0.6A
VGS = 10V ID= 1.0A
VDS = 15V IDS = 0.6A
VGS = 0 VDS = 25V
f = 1MHz
VGS = 10V VDS = 50V
IDS = 1.0A
VDD = 50V ID= 1.0A
RG= 24Ω
(MOSFET switching times are essentially
independent of operating temperature.)
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
IS= 1.0A VGS = 0
IF =1.0A TJ= 25°C
di/ dt=100A/µsV
DD = 50V
ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Forward
Gate – Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain Source On-State
Resistance*
Forward Transductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current Body
Diode
Source Current* (Body Diode)
Diode Forward Voltage *
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
QRR
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
,
5
/
Ω
Notes
* Pulse Test: Pulse Width ≤300µs, δ≤2%
