PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: POUT 8.0 W Gain 6.0 dB min. Silicon Nitride Passivated OmnigoldTM Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 50 V VEBO 4.0 V PDISS 52 W @ TC = 25 C TSTG -40 C to +150 C JC 3.4 C/W 1 = Collector 2 = Base 3 = Emitter NONE CHARACTERISTICS TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 50 V BVEBO IE = 5.0 mA 3.5 V hFE VCE = 5.0 V IC = 1.0 A 100 6.0 Gpe c VCC = 22 V Pout = 8.0 W f = 1350 - 1850 MHz 40 dB 50 % 5:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. --- --- REV. A 1/1