A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 5.0 mA 50 V
BVEBO IE = 5.0 mA 3.5 V
hFE VCE = 5.0 V IC = 1.0 A 100 ---
Gpe
c
VCC = 22 V Pout = 8.0 W f = 1350 - 1850 MHz
6.0
40
50
5:1
dB
%
---
NPN SILICON RF POWER TRANSISTOR
PTB20156B
DESCRIPTION:
The ASI PTB20156B is designed for
Class C, Common Base both CW and
PEP Applications from 1350 MHz to
1850 MHz.
FEATURES INCLUDE:
POUT 8.0 W
Gain 6.0 dB min.
Silicon Nitride Passivated
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.0 A
VCBO 50 V
VEBO 4.0 V
PDISS 52 W @ TC = 25 °C
TSTG -40 °C to +150 °C
JC 3.4 °C/W
PACKAGE STYLE 320 2L FLG
1 = Collector 2 = Base 3 = Emitter
