BAS70-06S
Jul-06-20011
Silicon Schottky Diode Array
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
VPS05604
6
3
1
54
2
EHA07288
654
321
A1/A2 C2 C1
A1/A2C2C1
Di1
Di2
Type Marking Pin Configuration Package
BAS70-06S 76s 1=C1 2=C2 3=A1/A2 4=C1 5=C2 6=A1/A2 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR70 V
Forward current IF70 mA
Surge forward current (t
10ms) IFSM 100
Total power dissipation, TS
72 °C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tst
-55 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
310 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance