VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V 4500 V DC collector current IC Tc = 85 C 1200 A Peak collector current ICM tp = 1 ms, Tc = 85 C 2400 A 20 V 10500 W 1200 A 2400 A 9000 A 10 s 10200 V 150 C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 3400 V, VCEM CHIP 4500 V VGE 15 V, Tvj 125 C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -50 125 C Case temperature Tc -50 125 C Storage temperature Tstg -50 125 C Mounting torques 2) min VCES Gate-emitter voltage 1) Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1200G450350 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 4500 Collector-emitter 4) saturation voltage VCE sat IC = 1200 A, VGE = 15 V Collector cut-off current ICES VCE = 4500 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) tf Eon Eoff ISC L max Unit V Tvj = 25 C 2.6 V Tvj = 125 C 3.55 V Tvj = 25 C 12 mA Tvj = 125 C 120 mA -500 500 nA 4.5 6.5 V IC = 1200 A, VCE = 2800 V, VGE = -15 V .. 15 V 8.86 C 120 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C 6.02 nF 2.58 VCC = 2800 V, IC = 1200 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 740 Tvj = 125 C 750 Tvj = 25 C 210 Tvj = 125 C 230 Tvj = 25 C 2280 Tvj = 125 C 2470 Tvj = 25 C 600 Tvj = 125 C 660 VCC = 2800 V, IC = 1200 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 3080 Tvj = 125 C 4350 VCC = 2800 V, IC = 1200 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load Tvj = 25 C 4960 Tvj = 125 C 6000 VCC = 2800 V, IC = 1200 A, RG = 1.5 , CGE = 220 nF, VGE = 15 V, L = 150 nH, inductive load ns ns ns ns mJ mJ tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 3400 V, VCEM CHIP 4500 V CE RCC'+EE' typ 5200 A 18 nH TC = 25 C 0.07 TC = 125 C 0.1 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 2 of 9 5SNA 1200G450350 Diode characteristic values Parameter Forward voltage 5) Symbol Conditions VF IF = 1200 A 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) min VCC = 2800 V, IF = 1200 A, VGE = 15 V, RG = 1.5 , CGE = 220 nF, L = 150 nH inductive load Erec typ Tvj = 25 C 3.2 Tvj = 125 C 3.5 Tvj = 25 C 1460 Tvj = 125 C 1600 Tvj = 25 C 1030 Tvj = 125 C 1660 Tvj = 25 C 1270 Tvj = 125 C 1860 Tvj = 25 C 1630 Tvj = 125 C 2730 max Unit V A C ns mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.0095 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.019 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) min max Unit grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.018 K/W Ve Comparative tracking index CTI f = 50 Hz, QPD 10pC (acc. to IEC 61287) 5100 V 600 For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 190 140 48 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 40 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 64 Mass m 7) typ Rth(c-s)IGBT IGBT per switch, Partial discharge extinction voltage 2) Conditions Unit mm mm 26 mm 56 1760 g Package and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 3 of 9 5SNA 1200G450350 Electrical configuration 5 7 9 4 6 8 3 2 1 Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 4 of 9 5SNA 1200G450350 2400 2400 VCE = 20 V 2000 2000 25 C 1600 IC [A] IC [A] 1600 125 C 1200 1200 125 C 800 800 400 400 25 C VGE = 15V 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 VCE [V] Fig. 1 7 8 9 10 11 12 13 VGE [V] Fig. 2 Typical on-state characteristics, chip level 2400 Typical transfer characteristics, chip level 2400 17 V 17 V 15 V 2000 15 V 2000 13 V 13 V 1600 1600 11 V 11 V IC [A] IC [A] 6 1200 1200 9V 800 800 9V 400 400 Tvj = 125 C Tvj = 25 C 0 0 0 1 2 3 4 5 0 VCEsat [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 VCEsat [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 5 of 9 5SNA 1200G450350 16 12 VCC = 2800 V VGE = 15 V RG = 1.5 ohm CGE = 220 nF Tvj = 125 C L = 150 nH 11 10 9 8 Eon 14 12 Eoff Eon, Eoff [J] Eon, Eoff [J] 10 7 6 Eon 5 8 Eoff 6 4 3 VCC = 2800 V IC = 1200 A VGE = 15 V CGE = 220 nF Tvj = 125 C L = 150 nH 4 2 2 1 Esw [J] = 1.2 x 10-6 x I C2 + 6.1 x10-3 x I C + 1.08 0 0 0 400 800 1200 1600 2000 2400 0 1 2 3 4 IC [A] Fig. 5 5 6 7 8 9 10 11 RG [ohm] Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 td(off) td(off) td(on) tr 1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] tf td(on) tr 0.1 VCC = 2800 V VGE = 15 V RG = 1.5 ohm CGE = 220 nF Tvj = 125 C L = 150 nH 0.01 1 tf 0.1 0.01 0 400 800 1200 1600 2000 2400 0 IC [A] Fig. 7 VCC = 2800 V IC = 1200 A VGE = 15 V CGE = 220 nF Tvj = 125 C L = 150 nH Typical switching times vs collector current 1 2 3 4 5 6 7 8 9 10 11 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 6 of 9 5SNA 1200G450350 1000 20 VCC = 2800 V VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies 15 100 C [nF] VGE [V] VCC = 3600 V 10 Coes 10 5 Cres IC = 1200 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 5 Qg [C] 6 7 8 Typical gate charge characteristics 2.5 VCC 3400 V, Tvj = 125 C, VGE = 15 V RG = 1.5 ohm, CGE = 220 nF, L 150 nH 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 1000 2000 3000 VCE [V] 4000 5000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 7 of 9 5SNA 1200G450350 3500 1000 1000 500 500 Erec [mJ] = -5.25 x 10 -4 x I F2 + 2.61 x I F + 375 0 0 0 400 800 1200 1600 2000 2400 0 1 3 4 5 6 7 di/dt [kA/s] IF [A] Fig. 12 2 RG = 1 ohm Irr 1500 Qrr 1500 RG = 1.5 ohm 2000 Irr 2000 RG = 2.2 ohm 2500 2500 Erec RG = 3.3 ohm Qrr RG = 6.8 ohm Erec [mJ], Irr [A], Qrr [C] 3000 3000 Erec [mJ], Qrr [C], Irr [A] 3500 VCC = 2800 V IF = 1200 A VGE = 15 V CGE = 220 nF Tvj = 125 C L = 150 nH Erec VCC = 2800 V VGE = 15 V RG = 1.5 ohm CGE = 220 nF Tvj = 125 C L = 150 nH RG = 4.7 ohm 4000 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 2400 2400 2000 VCC 3400 V di/dt 6500 A/s Tvj = 125 C L 150 nH 2000 25 C 1600 125 C IR [A] IF [A] 1600 1200 1200 800 800 400 400 0 0 0 1 2 3 4 0 5 Fig. 14 Typical diode forward characteristics, chip level 1000 2000 3000 4000 5000 VR [V] VF [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1415-02 04-2012 page 8 of 9 5SNA 1200G450350 0.1 Analytical function for transient thermal impedance: n R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 Zth(j-c) IGBT 0.001 i 1 2 3 IGBT i 1 Ri(K/kW) 6.36 2.11 1.04 193 21.4 2.78 DIODE Zth(j-c) [K/W] IGBT, DIODE Zth(j-c) Diode Ri(K/kW) 12.5 4.37 2.16 192 22.6 3.1 i(ms) i(ms) 4 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2093 Thermal Design and Temperature Ratings of IGBT Modules 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1415-02 04-2012