AUIRFR6215
HEXFET® Power MOSFET
PD-96302A
Specifically designed for Automotive applications of
HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve low on-resistance per silicon area.
This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a
wide variety of other applications.
Description
Features
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P-Channel
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Low On-Resistance
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Dynamic dV/dT Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified *
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D-Pak
AUIRFR6215
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AUTOMOTIVE GRADE
V(BR)DSS -150V
RDS(on) max. 0.295
:
ID -13A
www.irf.com 1
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
01/28/11
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
ch
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
dh
mJ
I
AR
Avalanche Current
ch
A
E
AR
Repetitive Avalanche Energy
ch
mJ
dv/dt Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
hj
––– 1.4
R
θJA
Junction-to-Ambient(PCB mount)
i
––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
Max.
-13
-9.0
-44
110
5.0
-55 to + 175
± 20
0.71
300
310
A
°C
-6.6
11
AUIRFR6215
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Notes through are on page 10
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -150 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C
––– ––– 0.295
––– ––– 0.58
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V
gfs Forward Transconductance 3.6 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– -25
––– ––– -250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge ––– ––– 66
Q
gs
Gate-to-Source Charge ––– ––– 8.1
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 35
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 36 –––
t
d(off)
Turn-Off Delay Time ––– 53 –––
t
f
Fall Time ––– 37 –––
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 860 –––
C
oss
Output Capacitance ––– 220 –––
C
rss
Reverse Transfer Capacitance ––– 130 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(
Bod
y
Diode
)
ch
V
SD
Diode Forward Voltage ––– ––– -1.6 V
t
rr
Reverse Recovery Time ––– 160 240 ns T
J
= 25°C, I
F
=-6.6A
Q
rr
Reverse Recovery Charge ––– 1.2 1.7 µCdi/dt = 100A/µs
fh
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ΩV
GS
= -10V, I
D
= -6.6A
f
T
J
= 150°C
Static Drain-to-Source On-Resistance
R
DS(on)
pF
A
––– –––
––– –––
-13
-44
V
GS
= -10V, See Fig 6 and 13
fh
V
DD
= -75V
µA
nA
nC
ns
Conditions
T
J
= 25°C, I
S
=-6.6A, V
GS
= 0V
f
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
c
V
GS
= -10V, I
D
= -6.6A
f
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -150V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
V
DS
=-120V
Conditions
R
D
= 12Ω, See Fig. 10
fh
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig.5
h
I
D
= -6.6A
R
G
= 6.8Ω
V
DS
= -50V, I
D
= -6.6A
h
I
D
= -6.6A
V
GS
= 20V
V
GS
= -20V
L
D
L
S
Internal Source Inductance
Internal Drain Inductance ––– 4.5 –––
––– 7.5 –––
AUIRFR6215
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
D
PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer
qualification level is granted by extension of the
higher Automotive level.
Charged Device Model Class C5
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4
AEC-Q101-002
Human Body Model Class H3A
AEC-Q101-001
AUIRFR6215
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Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
1
10
100
1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
T = 175°C
J
V = -50V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -11A
D
AUIRFR6215
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 20406080
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -6.6A V = -120V
V = -75V
V = -30V
DDS
DS
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
10µs
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
0
400
800
1200
1600
2000
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
AUIRFR6215
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Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM
thJC
C
AUIRFR6215
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
0
200
400
600
800
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -2.7A
-4.7A
BOTTOM -6.6A
D
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
AUIRFR6215
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
* Reverse Polarity of D.U.T for P-Channel
AUIRFR6215
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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak Part Marking Information
Lot Code
AURFR6215
YWWA
XX or XX
Part Number
IR Logo
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFR6215
10 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH RG = 25Ω, IAS = -6.6A. (See Fig.12)
ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
This is applied for I-PAK, LS of D-PAK is measured between lead
and center of die contact
Uses IRF6215 data and test conditions
When mounted on 1" square PCB (FR-4 or G-10 Material ) For
recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C.
AUIRFR6215
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Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRFR6215 Dpak Tube 75 AUIRFR6215
AUIRFR6215 Tape and Reel 2000 AUIRFR6215TR
AUIRFR6215 Tape and Reel Left 3000 AUIRFR6215TRL
AUIRFR6215 Tape and Reel Right 3000 AUIRFR6215TRR
AUIRFR6215
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