BU806/807 BU806/807 High Voltage & Fast Switching Darlington Transistor * Using In Horizontal Output Stages of 110 Crt Video Displays * BUILT-IN SPEED-UP Diode Between Base and Emitter TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BU806 : BU807 400 330 V V : BU806 : BU807 200 150 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 8 A 15 A ICP *Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25C) TJ TSTG 2 A 60 W Junction Temperature 150 C Storage Temperature - 55 ~150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO (sus) ICES ICEV Parameter * Collector-Emitter Sustaining Voltage : BU806 : BU807 Test Condition IC = 100mA, IB = 0 Min. Max. 200 150 Units V V Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = 0 VCE = 330V, VBE = 0 100 100 A A Collector Cut-off Current : BU806 : BU807 VCE = 400V, VBE = -6V VCE = 330V, VBE = -6V 100 100 A A IEBO Emitter Cut-off Current VBE = 6V, IC = 0 3 mA VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 50mA 1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 50mA 2.4 V VF * Damper Diode Forward Voltage IF = 4A 2 V * Pulsed: pulsed duration = 300s, duty cycle = 1.5% (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 V CE = 5V 100 V CE = 1.5V 10 0.1 1 10 10 Ic = 100 IB VBE(sat) 1 V CE(sat) 0.1 0.1 IC[A], COLLECTOR CURRENT 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 IC MAX. (Pulse) 1ms 500 10 10us us s IC MAX. (DC) DC 1 100 m 10 IC[A], COLLECTOR CURRENT 10 Vf[V], FORWARD VOLTAGE 1 100us 1 0.1 BU806 0.1 0.1 1 10 0.01 0.01 BU807 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Damper Diode Figure 4. Safe Operating Area 80 PC[W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BU806/807 Package Demensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E Product Folder - Fairchild P/N BU807 - NPN Epitaxial Silicon Darlington Transistor SEARCH | Parametric | Cross Reference space Fairchild Semiconductor space GO space space Product Folders and Datasheets space space space >> Find products >> Home find products space space space BU807 Products groups NPN Epitaxial Silicon Darlington Transistor Analog and Mixed Signal Datasheet Contents Discrete Download this Features | Applications | Product Interface datasheet status/pricing/packaging Logic PDF space Microcontrollers Non-Volatile Features Memory e-mail this datasheet spaceOptoelectronics [EMarkets and mail] Using In Horizontal Output Stages of applications 110 Crt Video Displays This page New products BUILT-IN SPEED-UP Diode Between Print version Product selection and Base and Emitter parametric search space Cross-reference back to top search technical information Application notes Related Links Request samples Dotted line How to order products Dotted line Product Change Notices (PCNs) Dotted line Support Dotted line Distributor and field sales representatives Dotted line Quality and reliability Dotted line Design tools Applications buy products technical support High Voltage & Fast Switching Darlington Transistor my Fairchild company back to top Product status/pricing/packaging Product Product status Pricing* Package type Leads Packing method BU807 Full Production $0.56 TO-220 3 BULK BU807TU Full Production $0.56 TO-220 3 RAIL * 1,000 piece Budgetary Pricing back to top space Home | Find products | Technical information | Buy products | Support | Company | Contact us | Site index | Privacy policy space (c) Copyright 2002 Fairchild Semiconductor space file:///H|/imaging/BITTING/cpl/20020725_1/07252002_10/FAIR/07252002/BU807.html [Jul/26/2002 3:27:43 PM] space