PD- 94022A IRF7425 HEXFET(R) Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. ) RDS(on) max (m) S The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Top View Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -20 -15 -12 -60 2.5 1.6 20 12 -55 to + 150 V mW/C V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 11/20/01 IRF7425 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 --- --- --- -0.45 44 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.010 --- --- --- --- --- --- --- --- 87 18 21 13 20 230 160 7980 1480 980 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 8.2 VGS = -4.5V, ID = -15A m 13 VGS = -2.5V, ID = -13A -1.2 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -15A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 130 ID = -15A 27 nC VDS = -10V 32 VGS = -4.5V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -4.5V --- VGS = 0V --- pF VDS = -15V --- = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- -2.5 --- --- -60 --- --- --- --- 120 160 -1.2 180 240 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on 1 in square Cu board, t 10sec. max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7425 1000 1000 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 100 10 1 0.1 -1.0V 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 100 10 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 C 10 TJ = 25 C 1 V DS = -15V 20s PULSE WIDTH 1.6 1.8 2.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 1.4 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.2 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 -VGS , Gate-to-Source Voltage (V) -1.0V 1 -VDS , Drain-to-Source Voltage (V) 0.1 1.0 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP TOP 2.2 ID = -15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7425 12000 -VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) 8 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 8000 6000 4000 Coss Crss 2000 ID = -15A VDS =-16V VDS =-10V 6 4 2 0 0 1 10 0 100 40 160 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 150 C 1 TJ = 25 C 0.1 0.2 V GS = 0 V 0.4 0.6 100 100us 1ms 10 10ms 0.8 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 80 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 1.0 TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7425 15 RD VDS VGS 12 D.U.T. -ID , Drain Current (A) RG + VDD 9 VGS Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.015 RDS (on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to -Source On Resistance ( ) IRF7425 0.010 ID = -15A 0.005 1.0 2.0 3.0 4.0 5.0 0.010 0.009 VGS = -2.5V 0.008 0.007 0.006 VGS = -4.5V 0.005 0 10 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 14a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 14b. Gate Charge Test Circuit www.irf.com IRF7425 3.0 120 2.5 80 ID = -250A 2.0 Power (W) -VGS(th) , Variace ( V ) 100 60 40 20 1.5 0 -75 -50 -25 0 25 50 75 100 125 T J , Temperature ( C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs. Time 7 IRF7425 SO-8 Package Details DIM B 5 A 8 7 6 6 H E 0.25 [.010] 1 2 3 A 4 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC e1 6X e e1 C 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A A1 8X b MILLIMETERS MAX A 5 INCHES MIN C A B 8X L 8X c 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR D 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] 8 www.irf.com EXAMPLE: THIS IS AN IRF7101 (MOSFET) SO-8 Part Marking IRF7425 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/01 www.irf.com 9