MMSD301T1 Preferred Device SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin-offs of our popular MMBD301LT1, and MMBD701LT1 SOT-23 devices. They are designed for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. http://onsemi.com Features * * * * 1 Cathode Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage Pb-Free Packages are Available SOD-123 CASE 425-04 STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VR 30 70 Vdc Forward Current (DC) Continous IF 200 mA Forward Power Dissipation TA = 25C PF 225 mW Junction Temperature TJ -55 to +125 C Storage Temperature Range Tstg -55 to +150 C Reverse Voltage 2 Anode MMSD301T1 MMSD701T1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM A A A xx M xx M = Specific Device Code XT = MMSD301T1 XH = MMSD701T1 = Date Code = Pb-Free Package ORDERING INFORMATION Device Package Shipping MMSD301T1 SOD-123 3000 Tape & Reel MMSD301T1G SOD-123 (Pb-Free) 3000 Tape & Reel MMSD701T1 SOD-123 3000 Tape & Reel MMSD701T1G SOD-123 (Pb-Free) 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 April, 2005 - Rev. 3 1 Publication Order Number: MMSD301T1/D MMSD301T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 A) Diode Capacitance (VR = 0, f = 1.0 MHz Symbol Typ Max 30 70 - - - - - - 0.9 0.5 1.5 1.0 - - 0.9 0.5 1.5 1.0 - - 13 9.0 200 200 - - - - 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 V(BR)R MMSD301T1 MMSD701T1 MMSD301T1 MMSD701T1 Reverse Leakage (VR = 25 V) (VR = 35 V) MMSD301T1 MMSD701T1 Unit V CT MMSD301T1 MMSD701T1 Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min pF CT pF IR VF MMSD301T1 MMSD701T1 http://onsemi.com 2 nAdc nAdc Vdc MMSD301T1 TYPICAL CHARACTERISTICS MMSD301T1 2.8 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD301T1 f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 100 MMSD301T1 IF, FORWARD CURRENT (mA) MMSD301T1 IR, REVERSE LEAKAGE ( A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100C 1.0 TA = 75C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) TA = -40C 10 TA = 85C 1.0 TA = 25C 0.01 0.001 10 24 0.1 30 TA = 25C 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 3 1.0 1.2 MMSD301T1 TYPICAL CHARACTERISTICS MMSD701T1 2.0 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMSD701T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMSD701T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 5. Total Capacitance 80 90 100 Figure 6. Minority Carrier Lifetime 10 100 MMSD701T1 MMSD701T1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 TA = 100C 1.0 TA = 75C 0.1 10 TA = 85C TA = -40C 1.0 0.01 0.001 TA = 25C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.1 50 Figure 7. Reverse Leakage TA = 25C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 4 1.6 2.0 MMSD301T1 PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE C A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H AAA AAA 1 K DIM A B C D E H J K B E INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --- 0.000 0.004 --- 0.006 0.140 0.152 STYLE 1: PIN 1. CATHODE 2. ANODE 2 J D SOLDERING FOOTPRINT* EEE EEE EEE 0.91 0.036 2.36 0.093 4.19 0.165 EEE EEE EEE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --- 0.00 0.10 --- 0.15 3.55 3.85 MMSD301T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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