Supertex inc. VP0340 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVpss / Rosion) loony Order Number / Package BVpes (max) (min) TO-3 TO-220 Diet -400V 6.00. -1.5A VP0O340N1 VP0340N5 VP0340ND TMIL visual screening available High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C,... and fast switching speeds Iss Excellent thermal stability Integral Source-Drain diode High input impedance and high gain OoOododbon oo oO Complementary N- and P-channel devices Applications Motor controls Converters Amplifiers Switches Power supply circuits OOo o oO Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV oss Drain-to-Gate Voltage BVpes Gate-to-Source Voltage + 20V Operating and Storage Temperature -55C to +150C Soldering Temperature 300C * Distance of 1.6 mm from case for 10 seconds. 7-229 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertexs vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options = fl TO-3 Gog Case: DRAIN TO-220 TAB: DRAIN Note: See Package Outline section for dimensions. Thermal Characteristics VP0340 Package Ip (continuous)* Ip (pulsed) Power Dissipation Ge Ga lpr lbRM @T, = 25C C/W C/W TO-3 -2.7A -5.0A 100W 1.25 30 -2.7A -5.0A TO-220 -1.6A -5.0A 50W 2.5 40 -1.6A -5.0A * Ip (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVpss Breakdown Voltage -400 V Veg = OV, Ip = -10mA Vesitny Gate Threshold Voltage -2.5 -4.5 Vv Ves = Vos: Ip = -10MA AVesitn) Change in Veginy with Temperature 4.8 6.0 mv/GC Ip = -10MA, Ves = Vps less Gate Body Leakage -100 nA Vag = 20V, Vos = OV loss Zero Gate Voltage Drain Current -200 HA Ves = OV, Vos = Max Rating 20 mA 1. 2880 = 0.8 Max Rating IDony ON-State Drain Current -1.0 A Vag = -5V, Vos = -25V -1.5 -3.5 Veg = -10V, Vpg = -25V Rison | Se eec hese 60 ag |_ Meee Silo = 250m 4.5 6.0 Vag = -10V, Ip = -500mA ARpgion) Change in Rpgon With Temperature 0.7 1.2 %/C Veg = -10V, Ip = -500mA Ges Forward Transconductance 0.5 0.8 oO Vos = -25V, Ip = -500mA Cisg Input Capacitance 550 700 Vag = OV, Vig = -25V Coss Common Source Output Capacitance 90 120 pF f= 1 MHz Crass Reverse Transfer Capacitance 20 50 taony Turn-ON Delay Time 25 40 t, Rise Time a | 40} ies , nN taorr) Turn-OFF Delay Time 65 110 Roen = 102 t, Fall Time 20 40 Vsp Diode Forward Voltage Drop -1.0 -1.3 Vv Isp = -0.5A, Veg = OV ty Reverse Recovery Time 500 ns Isp = -0.5A, Vag = OV Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V + 10% PULSE INPUT \ / GENERATOR -40V 90% I ee tom torr ! tom tt tyorr) te ! D.ULT. ov ! OUTPUT OUTPUT | VoD __ / 90% 10% 90% \ 10% 7-230 VP0340 Typical Performance Curves Output Characteristics Saturation Characteristics Ves =-10V -8V a a o o a a E E xz xz 2 2 0 -10 -20 -30 -40 -50 Vos (volts) Vos (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature 100 Vps = -25V 80 a 5 Taz -55C _ 60 E 2 ow 2 Taz 25C = i Q 40 o O Ta= 125C 20 0 0 -0.5 -1.0 15 -2.0 -2.5 0 25 50 75 100 125 150 Ip (amperes) To (C) Maximum Rated Safe Operating Area Thermal Response Characteristics -10 TO-220 (pulsed) . -Fest=<5- = TO-3 TO-3 (DC Pp = 100W ~ To = 25C _ -1.0 | TO-220 (DC 5 wn c 5 oO 3. 2 = a & B 2 o -0.1 cc a E o = -0.01 1 -10 -100 -1000 0.001 0.01 0.1 4 10 Vps (volts) tp (seconds) 7-231 Typical Performance Curves BVpss Variation with Temperature BVpgsg (normalized) -50 0 50 100 150 Tj (C) Transfer Characteristics Ta = -55C Vps = -25V Ta = 25C Ip (amperes) Ta = 125C 0 -2 -4 6 -8 -10 Ves (volts) Capacitance vs. Drain-to-Source Voltage 1000 f = 1MHz 750 g C 8 ISS oO 5 500 8 & ON 250 NL Coss a \ Crss 0 0 -10 -20 -30 -40 Vps (volts) 7-232 Vesith) (normalized) Rpsion) (ohms) Ves (volts) VP0340 On-Resistance vs. Drain Current 0 15 -3.0 4.5 -6.0 75 Ip (amperes) Vith) and Rpg Variation with Temperature (ON) (normalized) Rps(On) @ -5V, -0.25A Rpsion) @ -10V, -0.5A Rp. -50 0 50 100 150 Tj (C) Gate Drive Dynamic Characteristics Vpg = -10 Vpg = -40V 1300 pF 0 4 8 12 16 20 Qe (nanocoulombs)