MMBFJ309 / MMBFJ310
J-FET HIGH FREQUENCY
AMPLIFIER TRANSISTOR
ELECTRICAL RATINGS
Rating Symbol Value Units
25
10
V
mAdc
Drain to Source Voltage
Gate Current IG
9/19/2005 Page 1www.panjit.com
Gate to Source Voltage VGS V
25
THERMAL RATINGS
Rating Symbol Value Units
225
-55 to +150
-55 to +150
mW
°C
°C
Power Dissipation (Note 1)
Operating Temperature Range
Storage Temperature Range
Pd
TJ
Tstg
Thermal Resistance - Junction to Ambient (Note 1) R JA °C/W
556
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
VDS
N-CHANNEL
DEVICE MARKING
MMBFJ309 = B9J; MMBFJ310 = B1J SOT-23
2
1
3
D
S
G
2
3
1
D
S
G
2
3
1
For VHF/UHF Applications
Note: Drain and Source are
interchangeable.
www.panjit.com
9/19/2005 Page 2
(T = 25°C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS J
Parameter Symbol Min Units
Conditions Typical Max
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
V(BR)GSS -25 - - V
- - -1.0 nA
V-1.0 - -4.0
OFF CHARACTERISTICS
IGSS
VGS (off)
I = -1.0 µA, V = 0
GDS
V = -15Vdc
GS
V = 10Vdc
I = 1.0nAdc
DS
Parameter Symbol Min Units
Conditions Typical Max
Zero Gate Current Drain Current
Gate-Source Forward Voltage
IDSS 12 - 30 mA
- - 1.0 V
ON CHARACTERISTICS
VGS(f) I = 1.0 mA, V = 0
G
Parameter Symbol Min Units
Conditions Typical Max
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
- - 250 µmhos
- - 5.0 pF
pF
--2.5
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance mmhos
8.0 -18
I = 10 mA, V = 10 V
DDS
f = 1.0 kHz
V = -10V, V = 0V
DS
GSf = 1.0 MHz
MMBFJ309 / MMBFJ310
V = -15Vdc T =125°C
GS - - -1.0 µA
J
MMBFJ309 V-2.0 - -6.5
MMBFJ310 DS
MMBFJ310
MMBFJ309 24 - 60 mA
V = 10Vdc
V = 0Vdc
DS
GS
DS
Equivalent Short-Circuit Input Noise
Voltage en
Crss
Ciss
Yfs
yos I = 10 mA, V = 10 V
DDS
f = 1.0 kHz
V = -10V, V = 0V
DS
GSf = 1.0 MHz
f = 100 Hz
I = 10 mA, V = 10 V
DDS nV / Hz
-
-10
MMBFJ309 / MMBFJ310
9/19/2005 Page 3 www.panjit.com
PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT
