DATA SH EET
Product specification
Supersedes data of 2001 Mar 27 2001 Jul 13
DISCRETE SEMICONDUCTORS
PBSS4140U
40 V low VCEsat NPN transistor
b
ook, halfpage
M3D102
2001 Jul 13 2
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
FEATURES
Low collector-emitter saturation voltage
High current capabilities.
Improved device reliability due to reduced heat
generation.
EnhancedperformanceoverSOT231Ageneralpurpose
packaged transistors.
APPLICATIONS
General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat transistor in a SOT323 plastic package.
PNP complement: PBSS5140U.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
PBSS4140U 41t
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 40 V
ICM peak collector current 2 A
RCEsat equivalent on-resistance <500 m
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
Fig.1 Simplified outline SOT323 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 40 V
VCEO collector-emitter voltage open base 40 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 1A
I
CM peak collector current 2A
I
BM peak base current 1A
P
tot total power dissipation Tamb 25 °C; note 1 250 mW
Tamb 25 °C; note 2 350 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
2001 Jul 13 3
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient in free air; note 1 500 K/W
in free air; note 2 357 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off
current VCB = 40 V; IC=0 −−100 nA
VCB = 40 V; IC= 0; Tamb = 150 °C−−50 µA
ICEO collector-emitter cut-off
current VCE = 30 V; IB=0 −−100 nA
IEBO emitter-base cut-off current VEB =5V; I
C=0 −−100 nA
hFE DC current gain VCE =5V; I
C=1mA 300 −−
V
CE =5V; I
C= 500 mA 300 900
VCE =5V; I
C=1A 200 −−
V
CEsat collector-emitter saturation
voltage IC= 100 mA; IB=1mA −−200 mV
IC= 500 mA; IB=50mA −−250 mV
IC= 1 A; IB= 100 mA −−500 mV
RCEsat equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 260 <500 m
VBEsat base-emitter saturation
voltage IC= 1 A; IB= 100 mA −−1.2 V
VBEon base-emitter turn-on
voltage VCE =5V; I
C=1A −−1.1 V
fTtransition frequency IC= 50 mA; VCE = 10 V; f = 100 MHz 150 −−MHz
Cccollector capacitance VCB = 10 V; IE=I
e= 0; f = 1 MHz −−10 pF
2001 Jul 13 4
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
handbook, halfpage
0
1000
200
400
600
800
MLD660
1011
(1)
10 IC (mA)
hFE
102103104
(3)
(2)
Fig.2 DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
10
1
10111010
2103104
101
MLD656
IC (mA)
VBE
(V)
(1)
(3)
(2)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb =55 °C.
(2) Tamb =25°C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MLD657
11010
2I
C
(mA)
VCEsat
(mV)
103104
(3)
(2)
(1)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB= 10.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
handbook, halfpage
MLD658
10
1
102
101110 I
C
(mA)
RCEsat
()
102103104
101
(3)
(1) (2)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
IC/IB= 10.
(1) Tamb = 150 °C.
(2) Tamb =25°C.
(3) Tamb =55 °C.
2001 Jul 13 5
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
handbook, halfpage
0 200
fT
(MHz)
IC (mA)
1000
400
300
100
0
200
400 600 800
MLD659
Fig.6 Transition frequency as a function of
collector current; typical values.
VCE =10V.
2001 Jul 13 6
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
2001 Jul 13 7
Philips Semiconductors Product specification
40 V low VCEsat NPN transistor PBSS4140U
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat anyother conditionsabove thosegiven inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyofthese products,conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representations orwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2001 72
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Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Jul 13 Document order number: 9397 750 08427