Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.6
IDM Pulsed Drain Current À4.0
PD @ TC = 25°C Max. Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á75 mJ
IAR Avalanche Current À1.0 A
EAR Repetitive Avalanche Energy À0.14 mJ
dv/dt Peak Diode Recovery dv/dt Â5.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
°C
A
POWER MOSFET
THRU-HOLE (MO-036AB)
03/01/10
www.irf.com 1
MO-036AB
Product Summary
Part Number RDS(on) ID
IRFG110 0.7 Ω 1.0A
Features:
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nElectrically Isolated
nDynamic dv/dt Rating
n Light-weight
For footnotes refer to the last page
IRFG110
JANTX2N7334
JANTXV2N7334
REF:MIL-PRF-19500/597
100V, QUAD N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
PD-90396H
IRFG110
2www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.7 VGS = 10V, ID = 0.6A
Resistance — — 0.8 VGS = 10V, ID = 1.0A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.86 — — S VDS > 15V, IDS = 0.6A Ã
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V ,VGS=0V
— — 250 VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 15 VGS =10V, ID = 1.0A
Qgs Gate-to-Source Charge — — 7.5 nC VDS = 50V
Qgd Gate-to-Drain (‘Miller’) Charge — — 7.5
td(on) Turn-On Delay Time — — 20 VDD = 50V, ID = 1.0A,
trRise Time — — 25 VGS =10V, RG = 7.5Ω
td(off) Turn-Off Delay Time — — 40
tfFall Time — — 40
LS + LDTotal Inductance — 10 —
Ciss Input Capacitance — 180 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 82 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 15 —
nA
Ã
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 17
RthJA Junction-to-Ambient — — 90 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 1.0
ISM Pulse Source Current (Body Diode) À— — 4.0
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.0A, VGS = 0V Ã
trr Reverse Recovery Time — — 200 ns Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 0.83 µC VDD ≤ 30V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Ω
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
www.irf.com 3
IRFG110
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRFG110
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
13a & b
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA LIMITED
BY RDS(on)
DC
www.irf.com 5
IRFG110
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
IRFG110
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
.
10
VGS
www.irf.com 7
IRFG110
 ISD ≤ 1.0A, di/dt ≤ 75A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 150mH
Peak IL = 1.0A, VGS = 10V
Footnotes:
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2010
G3
G4
G2
G1
G3
G4
G2G1
