TRF830,601 D84DR2,R1 XOWMER MOS FET 4.5 AMPERES 500, 450 VOLTS Rps(ON) = 1.5 0 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL ; to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. oun nes meen Also, the extended safe operating area with good linear apaiio.ze) 118 transfer characteristics makes it well suited for many linear pmee Praia Trae za aL. st applications such as audio amplifiers and servo motors. [ 2 7 =e + aa) F Features t I] TEMPERATURE t a EOINT e Polysilicon gate Improved stability and reliability 188019, 3551002) (3 , .220(5.59) e No secondary breakdown Excellent ruggedness i i ] . + .130(3.3) the Sesto Ta) e Ultra-fast switching Independent of temperature A hf . TERM.1 i -500(12.7)MIN. e Voltage controlled High transconductance Tenm2~ | ossi1.39 e Low input capacitance Reduced drive requirement ens , 7 ; .933(0.84) | 1051267) bl fg 210712.72 e Excellent thermal stability Ease of paralleling oa7ip68) oe tee ) rm aera .055(1.39)__ c 210(5,33 .021(0.53) 045(7.14) "790(4.82) OT5(0.38) UNIT TYPE |TERM.WTERM.2| TERM.3 TAB POWER MOS FET}T0-220-AB] GATE |DRAIN| SOURCE; ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF830/D84DR2 IRF831/D84DR1 UNITS Drain-Source Voltage Vpss 500 450 Volts Drain-Gate Voltage, Res = 1MO VpGR 500 450 Volts Continuous Drain Current @ Te: 25C Ip 45 45 A = 100C 3.0 3.0 A Pulsed Drain Current lpm 18 18 A Gate-Source Voitage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 wc Operating and Storage Junction Temperature Range Ty, Tsta@ -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rejc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Raa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 225 electrical characteristics (To = 25C) (unless otherwise specified) | CHARACTERISTIC [| SYMBOL| MIN | TYP | MAX | UNIT off characteristics Drain-Source Breakdown Voltage IRF830/D84DR2 | BVpss 500 _ _ Volts (Vas = OV, Ip = 250 WA) IRF831/D84DR1 450 _ ~ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, V@g = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current (Vag = 20V) lass _ _ +500 nA on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vps = Vas, Ip = 250 wA) On-State Drain Current \ 45 _ _ A (Vas = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 2.5A) Rps(oNn) _ 1.3 1.5 Ohms Forward Transconductance (Vps = 10V, Ip = 2.5A) Ofs 1.75 2.2 _ mhos dynamic characteristics Input Capacitance Vag = OV Ciss _ 650 800 pF Output Capacitance Vps = 25V Cogs _ 90 200 pF Reverse Transfer Capacitance f = 1 MHz Crss 15 60 pF switching characteristics* Turn-on Delay Time Vos = 225V ta(on) ~ 15 _ ns Rise Time Ip = 2.5A, Vag = 15V tr - 10 _ ns Turn-off Delay Time RGEN = 500, Res = 12.50 ta (off) _ 40 _ ns Fall Time (Ras (EQuiv.) = 10) t 25 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 4.5 A Pulsed Source Current Isom - _ 18 A Diode Forward Voltage _ (To = 25C, Vgg = OV, Ig = 4.5A) VsD 1.0 14 Volts Reverse Recovery Time ter _ 460 _ ns (Ig = 4.5A, dlg/dt = 100A/usec, To = 125C) Qrar - 4.5 _ uc Pulse Test: Pulse width < 300 ys, duty cycle = 2% 100 80 60 40 20 a ery 4 2 10 = 8 = 6 zZ 4 a 7 5 2 3 RA iN THIS z MAY BEL DBY = 10 08 9 06 2 0.4 SINGLE PU = 25C 0.2 0.t 1 2 4 6 810 20 40 6080100 200 Vpg- ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 226 2.4 2.2 CONDITIONS: Rosin) CONDITIONS: Ip = 2.5 A, Vgg = 10V 2.0 V@s(TH) CONDITIONS: Ip = 250uA, Vos* Vas 1.8 Rosion) 1.6 1.4 1.2 1.0 08 0.6 Roscon) AND Vestru) NORMALIZED 0.4 0.2 9 40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rysion AND Vagiru) VS. TEMP.