AO3415A 20V P-Channel MOSFET General Description Product Summary The AO3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. VDS -20V ID (at VGS=-4.5V) -5A RDS(ON) (at VGS= -4.5V) < 41m RDS(ON) (at VGS= -2.5V) < 53m RDS(ON) (at VGS= -1.8V) < 65m ESD protected SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev. 3.0 June 2013 Steady-State Steady-State A 1.5 W 1 TJ, TSTG Symbol t 10s V -30 PD TA=70C 8 -4 IDM TA=25C Power Dissipation B Units V -5 ID TA=70C Maximum -20 RJA RJL www.aosmd.com -55 to 150 Typ 65 85 43 C Max 80 100 52 Units C/W C/W C/W Page 1 of 5 AO3415A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -20 Typ Max Units V VDS=-20V, VGS=0V -1 TJ=55C -5 A 10 A -0.57 -0.9 V 34 41 49 59 VGS=-2.5V, ID=-4A 42 53 VGS=-1.8V, ID=-2A 52 65 VGS=-1.5V, ID=-1A 61 m Forward Transconductance VDS=-5V, ID=-4A 20 S VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current IGSS Gate-Body leakage current VDS=0V, VGS= 8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250 -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 VGS=-4.5V, ID=-4A TJ=125C RDS(ON) gFS Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-4.5V, VDS=-10V, ID=-4A A -0.64 m m m -1 V -2 A 600 751 905 pF 80 115 150 pF 48 80 115 pF 6 13 20 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC VGS=-4.5V, VDS=-10V, RL=2.5, RGEN=3 13 ns 9 ns 19 ns 29 ns trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=500A/s 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/s 40 51 62 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev. 3.0 June 2013 www.aosmd.com Page 2 of 5 AO3415A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V 15 -4.5V VDS=-5V 35 -3.0V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 3 5 125C 25C VGS=-1.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 100 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 1.60 VGS=-1.5V 80 RDS(ON) (m ) 6 60 VGS=-1.8V 40 VGS=-2.5V VGS=-4.5V ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-2A, VGS=-1.8V 1.00 0.80 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 120 ID=-4A 1.0E+00 100 -IS (A) RDS(ON) (m ) 1.0E-01 80 60 125C 125C 25C 1.0E-02 1.0E-03 40 1.0E-04 25C 1.0E-05 20 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev. 3.0 June 2013 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3415A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 100s 1ms 1.0 10ms DC Power (W) 10s -ID (Amps) 20 100 10 100ms 0.1 10s TJ(Max)=150C TA=25C 1 0.0 0.00001 0.01 0.1 1 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=100C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev. 3.0 June 2013 www.aosmd.com Page 4 of 5 AO3415A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev. 3.0 June 2013 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5