AO3415A
Symbol Min Typ Max Units
BV
DSS
-20 V
V
DS
=-20V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage -0.3 -0.57 -0.9 V
I
D(ON)
-30 A
34 41
T
J
=125°C 49 59
42 53 mΩ
52 65 mΩ
61 mΩ
g
FS
20 S
V
SD
-0.64 -1 V
I
S
-2 A
C
iss
600 751 905 pF
C
oss
80 115 150 pF
C
rss
48 80 115 pF
R
g
6 13 20 Ω
Q
g
7.4 9.3 11 nC
Q
gs
0.8 1 1.2 nC
Q
gd
1.3 2.2 3.1 nC
Gate Drain Charge
Total Gate Charge V
GS
=-4.5V, V
DS
=-10V, I
D
=-4A
Gate Source Charge
Reverse Transfer Capacitance V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Gate resistance
mΩ
Static Drain-Source On-Resistance
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
I
DSS
µA
V
DS
=V
GS
, I
D
=-250µΑ
V
DS
=0V, V
GS
= ±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
V
GS
=0V, V
DS
=0V, f=1MHz
Drain-Source Breakdown Voltage
On state drain current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4A
V
GS
=-1.5V, I
D
=-1A
V
GS
=-1.8V, I
D
=-2A
I
D
=-250µA, V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Diode Forward Voltage
Forward Transconductance
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
R
DS(ON)
D(on)
t
r
9 ns
t
D(off)
19 ns
t
f
29 ns
t
rr
20 26 32 ns
Q
rr
40 51 62 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=-4A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=-4A, dI/dt=500A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.5Ω,
R
GEN
=3Ω
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev. 3.0 June 2013 www.aosmd.com Page 2 of 5