1. Product profile
1.1 General description
The KMZ43T is a sensitive magnetic field sensor, employing the magnetoresistive effect
of thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at
a relative angle of 45° to one another.
A rotating magnetic field in the x-y plane will produce two independent sinusoidal output
signals, one a function of +cos(2α) and the second a function of +sin(2α), α being the
angle between sensor and field direction (see Figure 2). The KMZ43T is suited to high
precision angle measurement applications under low field conditions (saturation field
strength 25 kA/m).
The sensor can be operated at any frequency between 0 Hz and 1 MHz.
1.2 Features
nAccurate and reliable angle measurement
nMechanical robustness, contactless principle
nWear-free operation
nAccuracy independent of mechanical tolerances
nExtended temperature range
1.3 Applications
1.4 Quick reference data
[1] Applicable for bridge 1 and bridge 2.
[2] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
KMZ43T
Magnetic field sensor
Rev. 05 — 4 March 2009 Product data sheet
nSteering angle and torsion nWindow wipers
nHeadlight adjustment nFuel level
nMotor positioning nMirror positioning
Table 1. Quick reference data
T
amb
=25
°
C and H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage [1] - 59V
Vpeak peak output voltage see Figure 2 [1] 60 67 75 mV
Voffset offset voltage per supply voltage;
see Figure 2 [1] −2 - +2 mV/V
Rbridge bridge resistance [1][2] 2.7 3.2 3.7 kΩ
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 2 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
2. Pinning information
3. Ordering information
4. Circuit diagram
Table 2. Pinning
Pin Symbol Description Simplified outline
1 ON1 output voltage bridge 1
2 ON2 output voltage bridge 2
3V
CC2 supply voltage bridge 2
4V
CC1 supply voltage bridge 1
5 OP1 output voltage bridge 1
6 OP2 output voltage bridge 2
7 GND2 ground 2
8 GND1 ground 1
4
5
1
8
Table 3. Ordering information
Type number Package
Name Description Version
KMZ43T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Fig 1. Device and test circuit diagram
008aaa100
VCC1
VCC1 VOP1
VO1
VON1 VOP2
VO2
VON2 VCC2
OP1 GND1 ON1
cos
R12
R14R13
R11
bridge 1
KMZ43T
VCC2
OP2 GND2 ON2
sin
R22
R24R23
R21
bridge 2
V V V V
V V
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 3 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
5. Limiting values
[1] Applicable for bridge 1 and bridge 2.
6. Thermal characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCC supply voltage [1] -9V
Hext external magnetic field strength 25 - kA/m
Tamb ambient temperature −40 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient 155 K/W
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 4 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
7. Characteristics
[1] Applicable for bridge 1 and bridge 2.
[2]
[3] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.
[4]
[5]
[6]
[7]
[8]
[9] ; Voffset = 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics,
calculated from the third and fifth harmonics of the spectrum VO.
Table 6. Characteristics
T
amb
=25
°
C and H
ext
= 25 kA/m; V
CC
= 5 V; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VCC supply voltage [1] - 59V
Vpeak peak output voltage see Figure 2 [1] 60 67 75 mV
TCVpeak temperature coefficient of peak
output voltage Tamb =−40 °C to +150 °C[1][2] −0.3 −0.36 −0.42 %/K
Rbridge bridge resistance [1][3] 2.7 3.2 3.7 kΩ
TCRbridge temperature coefficient of
bridge resistance Tamb =−40 °C to +150 °C[1][4] 0.24 0.26 0.29 %/K
Voffset offset voltage per supply voltage;
see Figure 2 [1] −2 - +2 mV/V
TCVoffset temperature coefficient of
offset voltage per supply voltage;
Tamb =−40 °C to +150 °C;
see Figure 2
[1][5] −4 - +4 (µV/V)/K
FH hysteresis of output voltage see Figure 3 [1][6] 0 0.05 0.18 %FS
k amplitude synchronism [7] 99.5 100 100.5 %
TCktemperature coefficient of
amplitude synchronism Tamb =−40 °C to +150 °C[8] −0.01 - +0.01 %/K
∆α angular inaccuracy [9] 0 0.05 0.1 deg
TCVpeak 100 Vpeak at 150 °C()Vpeak at 40–°C()–
Vpeak at 25 °C()150 °C40–°C()–()×
----------------------------------------------------------------------------------------------------
×=
TCRbridge 100 Rbridge at 150 °C()Rbridge at 40–°C()–
Rbridge at 25 °C()150 °C40–°C()–()×
--------------------------------------------------------------------------------------------------------
×=
TCVoffset Voffset at 150 °C()Voffset at 40–°C()–
150 °C40–°C()–
----------------------------------------------------------------------------------------------------
=
FH1100 VO1 67.5°()135°→45°VO1 67.5°()45°→135°–
2V
peak1
×
------------------------------------------------------------------------------------------------------------------------
×=
FH2100 VO2 22.5°()90°→0°VO2 22.5°()0°→90°–
2V
peak2
×
------------------------------------------------------------------------------------------------------------
×=
k 100 Vpeak1
Vpeak2
-----------------
×=
TCk100 k at 150 °C()kat 40–°C()–
kat25°C()150 °C40–°C()–()×
----------------------------------------------------------------------------------------
×=
∆α αreal αmeas
–=
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 5 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
Fig 2. Output signals related to the direction of the magnetic field
Fig 3. Definition of hysteresis
mgu175
ON1
ON2
VCC2
VCC1
GND1
direction of
magnetic field
α = 0°
α
GND2
OP2
OP1
0
VO
(mV)
Voffset2 0
90 180 360
270 α (deg)
VO2
Vpeak2
VO1
006aaa530
α (deg)
0 1359045
0
VO
(mV)
FH2
VO1 VO2
FH1
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 6 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
8. Package outline
9. Revision history
Fig 4. Minimized package outline SOT96-1
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
KMZ43T_5 20090304 Product data sheet - KMZ43T_4
Modifications: •Table 6: TCVpeak and TCRbridge values adapted to 25 °C reference point
KMZ43T_4 20080326 Product data sheet - KMZ43T_3
KMZ43T_3 20030915 Product specification - KMZ43T_2
KMZ43T_2 20030326 Preliminary specification - KMZ43_1
KMZ43_1 20000824 Objective specification - -
03-02-18Dimensions in mm
1.0
0.4
1.75
pin 1 index
0.49
0.36 0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.27
KMZ43T_5 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 05 — 4 March 2009 7 of 8
NXP Semiconductors KMZ43T
Magnetic field sensor
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors KMZ43T
Magnetic field sensor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 4 March 2009
Document identifier: KMZ43T_5
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Circuit diagram. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11 Contact information. . . . . . . . . . . . . . . . . . . . . . 7
12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
